首页 |元器件品牌

TIP122G-Q-T60-K [UTC]

Power Bipolar Transistor,;
TIP122G-Q-T60-K
型号： TIP122G-Q-T60-K
厂家： Unisonic Technologies    Unisonic Technologies
描述：

Power Bipolar Transistor,
文件： 总4页 (文件大小：238K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
UNISONIC TECHNOLOGIES CO., LTD  
TIP122-Q  
NPN SILICON TRANSISTOR  
NPN EPITAXIAL TRANSISTOR  
DESCRIPTION  
1
The UTC TIP122-Q is a NPN epitaxial transistor, designed for  
use in general purpose amplifier low-speed switching applications.  
TO-220  
EQUIVALENT TEST  
C
1
TO-126  
B
R1  
R2  
E
(R1≈6kΩ, R2≈0.5kΩ)  
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Packing  
Package  
Normal  
Lead Free Plating  
1
B
B
2
C
C
3
E
E
TIP122L-Q-TA3-T  
TIP122G-Q-TA3-T  
TIP122G-Q-T60-K  
C: Collector  
TO-220  
TO-126  
Tube  
Bulk  
TIP122G-Q-T60-K  
Note: Pin Assignment: B: Base  
E: Emitter  
TIP122G-Q-TA3-T  
(1) T: Tube, K: Bulk  
(2) TA3: TO-220, T60: TO-126  
(3) G: Halogen Free and Lead Free, L: Lead Free  
(1)Packing Type  
(2)Package Type  
(3)Green Package  
MARKING  
TO-220 / TO-220F / TO-252  
TO-126  
UTC  
TIP122  
UTC  
L: Lead Free  
G: Halogen Free  
Date Code  
Date Code  
TIP122  
L: Lead Free  
Lot Code  
Lot Code  
G: Halogen Free  
1
1
www.unisonic.com.tw  
Copyright © 2019 Unisonic Technologies Co., Ltd  
1 of 4  
QW-R204-035.B  
TIP122-Q  
NPN SILICON TRANSISTOR  
ABSOLUTE MAXIMUM RATINGS (TA= 25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATINGS  
UNIT  
V
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
IC Collector Current  
100  
100  
V
5
V
5
65  
A
TO-220  
TO-126  
W
W
°C  
°C  
Power Dissipation (TC=25°C)  
PD  
10  
Junction Temperature  
Storage Temperature  
TJ  
+150  
-55 ~ +150  
TSTG  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
BVCEO  
TEST CONDITIONS  
IC=100mA  
MIN TYP MAX UNIT  
Collector-Emitter Breakdown Voltage  
Collector-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Collector Cut-Off Current  
100  
V
V
V
V
VCE(SAT)1 IC=3A, IB=12mA  
VCE(SAT)2 IC=5A, IB=20mA  
2
4
VBE(ON)  
ICBO  
VCE=3V, IC=3A  
VCB=100V  
2.5  
200 uA  
500 uA  
Collector-Cut-Off Current  
ICEO  
VCE=50V  
Emitter Cut-Off Current  
IEBO  
VEB=5V  
2
mA  
IC=500mA, VCE=3V  
IC=3A, VCE=3V  
1000  
1000  
DC Current Gain  
hFE  
UNISONICTECHNOLOGIESCO.,LTD  
www.unisonic.com.tw  
2 of 4  
QW-R204-035.B  
TIP122-Q  
NPN SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS  
DC Current Gain vs. Collector  
Current  
Collector-Emitter Saturation Voltage  
vs. Collector Current  
10  
100000  
10000  
1000  
IC=250lb  
VCE=3V  
VCE(SAT)  
1
100  
10  
1
0.1  
0.01  
0.1  
1
10  
10  
0.1  
1
Collector Current, IC (A)  
Collector Current, IC (A)  
Base-Emitter Saturation Voltage vs.  
Collector Current  
PD vs. TA  
80  
10  
TO-220  
60  
40  
20  
0
1
0.1  
120  
40 60 80 100  
160  
20  
140  
10  
0
1
Collector Current, IC (A)  
Case Temperature, TA (°C)  
Safe Operating Area  
101  
100μs  
500μs  
1ms  
DC  
100  
Notes:  
1.TA=25°C  
2.Single Pulse  
10-1  
100  
101  
102  
Collector-Emitter Voltage, VCE (V)  
UNISONICTECHNOLOGIESCO.,LTD  
3 of 4  
QW-R204-035.B  
www.unisonic.com.tw  
TIP122-Q  
NPN SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all UTC products described or contained herein.  
UTC products are not designed for use in life support appliances, devices or systems where malfunction  
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in  
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to  
make changes to information published in this document, including without limitation specifications and  
product descriptions, at any time and without notice. This document supersedes and replaces all  
information supplied prior to the publication hereof.  
UNISONICTECHNOLOGIESCO.,LTD  
4 of 4  
QW-R204-035.B  
www.unisonic.com.tw  

相关型号：

TIP122L

 Silicon NPN transistor in a TO-126 Plastic Package.
FOSHAN

TIP122L-T60-K

 NPN EPITAXIAL TRANSISTOR
UTC

TIP122L-TA3-T

 NPN EPITAXIAL TRANSISTOR
UTC

TIP122L-TF3-T

 NPN EPITAXIAL TRANSISTOR
UTC

TIP122L-TN3-R

 NPN EPITAXIAL TRANSISTOR
UTC

TIP122NPN

 PLASTIC POWER TRANSISTORS
CDIL

TIP122S

 5A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
MOTOROLA

TIP122SEL01

 Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
CENTRAL

TIP122T

 Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MOTOROLA

TIP122TU

 5.0 A，100 V，NPN 达林顿双极功率晶体管
ONSEMI

TIP122TU

 Medium Power Linear Switching Applications
FAIRCHILD

TIP122U

 Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MOTOROLA
©2020 ICPDF网 联系我们和版权申明