TIP32C_15 [UTC]

PNP EXPITAXIAL PLANAR TRANSISTOR;


型号：	TIP32C_15
厂家：	Unisonic Technologies
描述：	PNP EXPITAXIAL PLANAR TRANSISTOR 局域网
文件：	总3页 (文件大小：138K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO.,LTD

TIP32C

PNP SILICON TRANSISTOR

PNP EXPITAXIAL PLANAR

TRANSISTOR

DESCRIPTION

The UTC TIP32C is a PNP epitaxial planar transistor, designed

for using in general purpose amplifier and switching applications.

FEATURES

* Complement to TIP31C

ORDERING INFORMATION

Ordering Number

Package

Pin Assignment

Packing

Lead Free

Halogen Free

TIP32CG-TA3-T

TIP32CG-T60-K

TIP32CG-T6S-K

TIP32CG-TN3-R

TIP32CL-TA3-T

TIP32CL-T60-K

TIP32CL-T6S-K

TIP32CL-TN3-R

TO-220

TO-126

TO-126S

TO-252

Tube

Bulk

Tape Reel

www.unisonic.com.tw

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QW-R209-017,D

TIP32C

PNP SILICON TRANSISTOR

ABSOLUATE MAXIUM RATINGS (T_A=25°C)

PARAMETER

SYMBOL

V_CBO

V_EBO

I_C

RATINGS

UNIT

Collector-Base Voltage

Emitter-Base Voltage

-100

-5

-3

Collector Current

Base Current

PULSE

I_CM

-5

I_B

-1

TO-220

1.25

°C

TO-126S/TO-126

TO-252

Power Dissipation

P_D

Junction Temperature

Storage Temperature

T_J

+150

-40 ~ +150

T_STG

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (T_A=25°C, unless otherwise specified.)

PARAMETER

Collector Emitter Sustaining Voltage

(Note)

SYMBOL

BV_CEO

TEST CONDITIONS

I_C=-30mA,I_B=0

MIN

-100

TYP MAX UNIT

Collector Cutoff Current

Emitter Cutoff current

Collector-Emitter Saturation Voltage

(Note)

I_CES

I_CEO

I_EBO

V_CE=-100V, V_BE=0

V_CE=-60V, I_B=0

V_BE=-5V, I_C=0

-200

-0.3

-1

μA

V_CE(SAT)

V_BE(ON)

h_FE

I_C=-3A, I_B=-375mA

-1.2

-1.8

Base-Emitter On Voltage*

I_C=-3A, V_CE=-4A

I_C=-1A, V_CE=-4V

DC Current Gain (Note)

I_C=-3A, V_CE=-4V

Current Gain Bandwidth Product

f_T

I_C=-0.5A,V_CE=-10V, f=1MHz

MHz

Note: Pulse Test: PW≤300μs, Duty Cyle≤2%

UNISONIC TECHNOLOGIES CO., LTD

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QW-R209-017,D

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TIP32C

PNP SILICON TRANSISTOR

TYPICAL CHARACTERICS

Saturation Voltage vs. Collector Current

I_C=10I_B

Sage Operating Area

I_CMAX. (PULSE)

-10

-10000

-5000

-3000

-5.0

-3.0

-1000

V_BE(SAT)

-500

-300

-1.0

-0.5

-0.3

-100

-50

-30

V_CE(SAT)

TIP32C V_CEOMAX.

-10

-0.1

-1

-3 -5 -10 -30-50-100 -300 -1000 -3000-10000

Collector Current, I_C(mA)

-4.5

-10

-30

-100

-300

-50

Collector-Emitter Voltage V_CE(V)

Power Derating

DC Current Gain

V_CE=-4V

1000

500

300

100

-1

-3 -5 -10 -30-50-100 -300 -1000-3000 -10000

Collector Current, I_C(mA)

100

150

200

Case Temperature, T_C(°C)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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QW-R209-017,D

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