UF3205-TA3-T [UTC]
Transistor;
| 型号： | UF3205-TA3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | Transistor |
| 文件： | 总5页 (文件大小：172K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UF3205
Preliminary
Power MOSFET
HEXFET POWER MOSFET
DESCRIPTION
The UTC UF3205 uses advanced technology to provide
excellent RDS(ON), fast switching, low gate charge, and extremely
efficient. This device is suitable for all commercial-industrial
applications at power dissipation levels to approximately 50 watts.
FEATURES
* RDS(ON)<8 mΩ @VGS=10V
* Ultra Low Gate Charge ( 146 nC max )
* Low Reverse Transfer Capacitance ( CRSS = typ. 211 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
Lead-free:
UF3205L
SYMBOL
Halogen-free: UF3205G
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
TO-220
Packing
Tube
Normal
Lead Free Plating
UF3205L-TA3-T
Halogen Free
1
2
3
UF3205-TA3-T
UF3205G-TA3-T
G
D
S
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-304.a
www.unisonic.com.tw
UF3205
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VGSS
ID
RATINGS
UNIT
V
±20
110
Gate-Source Voltage
Drain Current
Continuous (VGS=10V)
Pulsed (Note 2)
A
A
IDM
390
Avalanche Current (Note 2)
Avalanche Energy
IAR
62
Repetitive(Note 2)
EAR
EAS
PD
20
mJ
Single Pulsed(Note 3)
1050
200
Power Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
W
°C
°C
TJ
+175
-55 ~ +175
TSTG
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. TJ=25°C, L=138μH, RG=25Ω, IAS=62A
THERMAL DATA
PARAMETER
SYMBOL
θJA
MIN
TYP
MAX
62
0.75
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJC
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Breakdown Voltage Temperature
Coefficient
BVDSS
IDSS
V
V
V
V
GS=0V, ID=250μA
DS=55V,VGS=0V
GS=±20V, VDS=0V
55
μA
nA
25
IGSS
±100
△BVDSS/△TJ
V/°C
Reference to 25°C, ID=1mA
0.057
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note)
DYNAMIC PARAMETERS
Input Capacitance
VGS(TH)
RDS(ON)
V
V
DS=VGS, ID=250μA
2.0
4.0
8.0
mΩ
VGS=10V, ID=62A
CISS
COSS
CRSS
pF
pF
pF
3247
781
Output Capacitance
VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
211
QG
QGS
QGD
tD(ON)
tR
nC
nC
nC
ns
146
35
54
Gate Source Charge
Gate Drain Charge
VDS=44V, ID=62A, VGS=10V
Turn-ON Delay Time
14
101
50
Turn-ON Rise Time
Turn-OFF Delay Time
ns
ns
VDD=28V, ID=62A, RG=4.5Ω,
tD(OFF)
tF
VGS=10V (Note)
Turn-OFF Fall-Time
65
ns
Internal Drain Inductance
Internal Source Inductance
LD
4.5
7.5
nH
nH
LS
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
V
A
IS=62A ,VGS=0V
1.3
Maximum Continuous Drain-Source Diode
Forward Current
IS
110
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
390
A
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Note: Pulse width ≤ 400μs; duty cycle ≤ 2%.
tRR
ns
69
143
104
215
IF=62A, dI/dt=100A/μs (Note)
QRR
nC
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-304.a
UF3205
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
1A Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
1B Peak Diode Recovery dv/dt Waveforms
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UF3205
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
RD
VDS
VDS
90%
VGS
RG
VDD
10%
VGS
D.U.T.
VGS
tD(ON)
tD(OFF)
Pulse Width≤ 1µs
Duty Factor≤0.1%
tF
tR
2A Switching Test Circuit
2B Switching Waveforms
Same Type
as D.U.T.
50kΩ
QG
12V
VGS
0.3µF
0.2µF
VDS
QG
QG
VGS
S
D
DUT
VG
3mA
Charge
RG
RD
3A Gate Charge Test Circuit
3B Gate Charge Waveform
4A Unclamped Inductive Switching Test Circuit
4B Unclamped Inductive Switching Waveforms
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UF3205
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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