UF450-T47-T [UTC]

12 Amps, 500 Volts N-CHANNEL POWER MOSFET; 12安培， 500伏特N沟道功率MOSFET


型号：	UF450-T47-T
厂家：	Unisonic Technologies
描述：	12 Amps, 500 Volts N-CHANNEL POWER MOSFET 12安培， 500伏特N沟道功率MOSFET
文件：	总6页 (文件大小：221K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

UF450

Power MOSFET

12 Amps, 500 Volts

N-CHANNEL POWER

MOSFET

DESCRIPTION

The UF450 uses advanced UTC technology to provide

TO-247

excellent R_DS(ON), low gate charge and operation with low

gate voltages. This device is suitable for use as a load

switch, in PWM applications, motor controls, inverters,

choppers, audio amplifiers and high energy pulse circuits.

FEATURES

*Pb-free plating product number: UF450L

* R_DS(ON)= 0.4Ω@V_GS= 10V

* Ultra low gate charge (max. 120nC )

* Low reverse transfer capacitance ( C_RSS= typical 240pF )

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability

SYMBOL

2.Drain

1.Gate

3.Source

ORDERING INFORMATION

Ordering Number

Pin Assignment

Packing

Package

TO-247

Normal

Lead Free Plating

UF450L-T47-T

UF450-T47-T

Tube

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UF450

Power MOSFET

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_GSS

I_D

RATINGS

UNIT

Gate-to-Source Voltage

±20

Continuous Drain Current

Pulsed Drain Current (Note 1)

Avalanche Current

I_DM

I_AR

Single Pulse Avalanche Energy (Note 2)

Power Dissipation (T_C=25℃)

E_AS

8.0

P_D

190

Peak Diode Recovery dv/dt (Note 2)

Junction Temperature

dv/dt

T_J

3.5

V/ns

℃

+150

-55 ~ +150

℃

Strong Temperature

T_STG

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

θ_JA

MIN

TYP

MAX

UNIT

℃/W

Junction-to- Ambient

Junction-to-Case

θ_jC

0.83

ELECTRICAL CHARACTERISTICS (T_J=25℃, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

Gate-Source Leakage Current

Breakdown Voltage Temperature Coefficient

ON CHARACTERISTICS

BV_DSSV_GS=0 V, I_D=1.0 mA

500

µA

I_DSS

I_GSS

V_DS=400V,V_GS=0 V

V_DS=0 V, V_GS= ±20V

Reference to 25℃, I_D=1.0mA

±100

V/℃

0.78

∆BV_DSS/∆T_J

Gate Threshold Voltage

V_GS(TH)V_DS=V_GS, I_D=250 µA

2.0

4.0

400

500

V_GS=10V, I_D=7.75A

R_DS(ON)

Static Drain-Source On-State Resistance

mΩ

V_GS=10V, I_D=12A

DYNAMIC PARAMETERS

Input Capacitance

C_ISS

C_OSS

C_RSS

2700

600

_DS= 25V, V_GS=0V,

Output Capacitance

f=1.0MHz

Reverse Transfer Capacitance

SWITCHING PARAMETERS

Total Gate Charge

240

Q_G

Q_GS

Q_GD

t_D(ON)

t_R

5.0

120

V_DS=250V, V_GS=10V,

Gate Source Charge

Gate Drain Charge

I_D=12A

Turn-ON Delay Time

Turn-ON Rise Time

V_DD=250V, I_D=12A,

190

170

130

R_G=2.35ꢀ

Turn-OFF Delay Time

Turn-OFF Fall-Time

t_D(OFF)

t_F

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

I_S=12A,V_GS=0V, T_J=25℃

Drain-Source Diode Forward Voltage

Maximum Continuous Drain-Source Diode

Forward Current

V_SD

1.7

I_S

Maximum Pulsed Drain-Source Diode

Forward Current

I_SM

Reverse Recovery Time

t_RR

I_F=12 A, dI/dt≤100A/µs,

T_J=25℃,V_DD≤50V (Note3)

1600

µc

Reverse Recovery Charge

Q_RR

Notes: 1. Repetitive Rating : Pulse width limited by T_J

2. V_DD= 50V, starting T_J= 25℃, Peak I_L= 12A, I_SD≤ 12, di/dt ≤ 130A/µs,V_DD≤ 500V,

T_J≤150℃Suggested R_G=2.35ꢀ

3. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

4. Essentially independent of operating temperature

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UF450

Power MOSFET

TEST CIRCUITS AND WAVEFORMS

Switching Time Test Circuit

V_GSV_DS

Switching Time Waveforms

V_DS

R_D

DUT

R_G

V_DD

V_GS=10V

V_GS

Pulse Width≤1µs Duty Cycle≤0.1

t_d(on)

t_r

t_d(off)

t_f

Unclamped Inductive Waveforms

Unclamped Inductive Test Circuit

V_GSV_DS

V_(BR)DSS

15V

t_P

Driver

DUT

R_G

V_GS=10V

V_DD

I_AS

t_P

0.01Ω

I_AS

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UF450

Power MOSFET

TYPICAL CHARACTERISTICS

Typical Output Characteristics

4.5,5.0,5.5,6.0,7.0,8.0,10,15V

Typical Output Characteristics

4.5,5.0,5.5,6.0,7.0,8.0,10,15V

10¹

4.5V

10⁰

20μs Pulse Width

T_C=150℃

20μs Pulse Width

T_C=25℃

10⁰

10¹

10⁰

10¹

Drain to Source Voltage,V_DS(V)

Normalized On-Resistance vs. Temperature

3.0

Typical Transfer Characteristics

I_D=12A

2.5

2.0

1.5

1.0

0.5

0.0

150℃

25℃

10¹

10⁰

V_DS=50V

20μs Pulse Width

V_GS=10V

-50 -40 -20 0 20 40 60 80100120140160

Junction Temperature,T_J(℃)

Gate to Source Voltage,V_GS(V)

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UF450

Power MOSFET

TYPICAL CHARACTERISTICS(Cont.)

Body-Diode Characteristics

Maximum Safe Operating Area

10³

10²

150℃

R_DS(ON)

Limited

10¹

10⁰

10^-1

25℃

10μs

100μs

1ms

10ms

T_C=25℃

T_J=150℃

V_GS=0V

1.0

Body Diode Forward Voltage,V_SD(V)

Single Pulse

0.1

0.6

0.8

1.2

10²

Drain to Source Voltage,V_DS(V)

10³

0.4

Maximum Effective Transient Thermal Impedance,Junction-to-Case

In descending order

D=0.5,0.3,0.1,0.05,0.02,0.01,single pulse

P_DM

0.1

10^-2

1.Duty Factor,D=t₁/t₂

2.Peak T_J=P_DM.Z_thJC+T_C

10^-3

10^-5

10^-4

10^-3

10^-2

0.1

Rectangular Pulse Duration,t₁(s)

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UF450

Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

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