UF450L-T3P-T [UTC]
14A, 500V N-CHANNEL POWER MOSFET; 14A ， 500V N沟道功率MOSFET
| 型号： | UF450L-T3P-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 14A, 500V N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：232K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UF450
Power MOSFET
14A, 500V N-CHANNEL
POWER MOSFET
1
TO-247
DESCRIPTION
The UF450 uses advanced UTC technology to provide
excellent RDS (ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch, in PWM
applications, motor controls, inverters, choppers, audio amplifiers
and high energy pulse circuits.
1
TO-220F1
FEATURES
* RDS(ON) = 0.4Ω@VGS = 10V
* Ultra Low Gate Charge (Max. 150nC )
* Low Reverse Transfer Capacitance ( CRSS = Typical 340pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability
1
TO-220F2
TO-3P
SYMBOL
1
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
D
D
D
D
3
S
S
S
S
UF450L-TF1-T
UF450L-TF2-T
UF450L-T47-T
UF450L-T3P-T
UF450G-TF1-T
UF450G-TF2-T
UF450G-T47-T
UF450G-T3P-T
TO-220F1
TO-220F2
TO-247
G
G
G
G
Tube
Tube
Tube
Tube
TO-3P
www.unisonic.com.tw
1 of 6
Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R502-185.G
UF450
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
500
UNIT
V
Drain-Source Voltage
Gate to Source Voltage
±20
V
Continuous Drain Current
Pulsed Drain Current (Note 2)
Avalanche Current (Note 2)
Single Pulse Avalanche Energy (Note 3)
14
A
IDM
56
A
IAR
14
A
EAS
760
mJ
TO-247
190
TO-220F1
TO-220F2
TO-3P
36
Power Dissipation (TC=25°C)
PD
W
38
215
Peak Diode Recovery dv/dt (Note 4)
Junction Temperature
dv/dt
TJ
3.5
V/ns
°C
+150
-55 ~ +150
Strong Temperature
TSTG
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. VDD=50V, starting TJ=25°C, L=7.0mH, IAS=14A, RG=25Ω
4. ISD≤14A, di/dt≤130A/μs, VDD≤BVDSS , TJ≤150°C
THERMAL DATA
PARAMETER
TO-247
SYMBOL
RATINGS
40
UNIT
°C/W
Junction to Ambient
Junction to Case
TO-220F1/ TO-220F2
TO-3P
θJA
62.5
40
TO-247
0.65
3.47
3.29
0.58
TO-220F1
TO-220F2
TO-3P
θJC
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-185.G
UF450
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS=0 V, ID=250µA
VDS=500V,VGS=0 V
500
V
25
µA
Forward
Reverse
V
GS=20V
100
-100
Gate-Source Leakage Current
IGSS
nA
VGS=-20V
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ Reference to 25°C, ID=1.0mA
0.63
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=8.4A
2.0
4.0
V
0.31 0.4
Ω
CISS
COSS
CRSS
2600
720
pF
pF
pF
Output Capacitance
VDS=25V, VGS=0V, f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS (Note 1)
Total Gate Charge
340
QG
QGS
QGD
tD(ON)
tR
150
nC
nC
nC
ns
ns
ns
ns
VDS=400V, VGS =10V,
ID=14A (Note 1,2)
Gate Source Charge
20
Gate Drain Charge
80
Turn-ON Delay Time
17
47
92
44
Turn-ON Rise Time
VDD=250V, ID=14A,
RG=6.2ꢀ , RD=17ꢀ(Note 1,2)
Turn-OFF Delay Time
tD(OFF)
tF
Turn-OFF Fall-Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
IS=14A, VGS=0V
1.4
14
V
A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
56
A
Reverse Recovery Time
trr
540 810
ns
µc
IF=14A, dI/dt≤100A/μs,
VDD≤50V (Note 1)
Reverse Recovery Charge
QRR
4.8
7.2
Note: 1.Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2.Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-185.G
UF450
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
90%
10%
VGS
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
tp
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R502-185.G
UF450
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-185.G
UF450
Power MOSFET
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 6
QW-R502-185.G
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