UF5305 [UTC]
-31A, -55V P-CHANNEL POWER MOSFET; -31A ， -55V P沟道功率MOSFET
| 型号： | UF5305 |
| 厂家： | 
Unisonic Technologies |
| 描述： | -31A, -55V P-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：195K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UF5305
Preliminary
POWER MOSFET
-31A, -55V P-CHANNEL POWER
MOSFET
DESCRIPTION
The UTC UF5305 is a P-channel Power MOSFET, it uses
UTC’s advanced technology to provide the customers with high
switching speed and a minimum on-state resistance.
The UTC UF5305 is suitable for all commercial-industrial
applications, etc.
FEATURES
* RDS(ON)<0.06Ω @ VGS=-10V, ID=-16A
* High Switching Speed
* Dynamic dv/dt Rating
* Halogen Free
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
D
D
D
3
S
S
S
TO-220
TO-252
TO-252
Tube
Tube
UF5305L-TA3-T
UF5305L-TN3-T
UF5305L-TN3-R
UF5305G-TA3-T
UF5305G-TN3-T
UF5305G-TN3-R
G
G
G
Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source
www.unisonic.com.tw
1 of 6
Copyright © 2012 Unisonic Technologies Co., Ltd
QW-R502-842.a
UF5305
Preliminary
POWER MOSFET
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current
VDSS
VGSS
-55
±20
V
VGS=-10V, TC=25°C
-31
A
Continuous
ID
VGS=-10V, TC=100°C
Pulsed (Note 2)
Avalanche Current (Note 2)
-22
A
IDM
IAR
-110
-16
A
A
Single Pulse (Note 3)
Repetitive (Note 2)
EAS
EAR
dv/dt
PD
280
mJ
mJ
V/ns
W
Avalanche Energy
11
Peak Diode Recovery dv/dt (Note 4)
Power Dissipation (TC=25°C)
Linear Derating Factor
-5.0
110
0.71
-55~+150
-55~+150
W/°C
°C
°C
Junction Temperature
TJ
Storage Temperature Range
TSTG
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. VDD=-25V, Starting TJ=25°C, L=2.1mH, RG=25ꢀ, IAS=-16A.
4. ISD≤-16A, di/dt≤-280A/µs, VDD≤BVDSS, TJ≤150°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
θJA
RATINGS
UNIT
Junction to Ambient
Junction to Case
62
°C/W
°C/W
θJC
1.4
UNISONIC TECHNOLOGIES CO., LTD
2 of 6
QW-R502-842.a
www.unisonic.com.tw
UF5305
Preliminary
POWER MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS VGS=0V, ID=-250µA
-55
V
∆BVDSS/∆TJ Reference to 25°C, ID=-1mA
-0.034
V/°C
VDS=-55V, VGS=0V
IDSS
-25
-250
100
µA
µA
nA
nA
Drain-Source Leakage Current
VDS=-44V, VGS=0V, TJ=150°C
Forward
Reverse
VGS=20V, VDS=0V
IGSS
Gate-Source Leakage Current
VGS=-20V, VDS=0V
-100
ON CHARACTERISTICS
Static Drain-Source On-Resistance
Gate Threshold Voltage
DYNAMIC PARAMETERS
Input Capacitance
RDS(ON) VGS=-10V, ID=-16A (Note 2)
VGS(TH) VDS=VGS, ID=-250µA
0.06
-4.0
ꢀ
-2.0
V
CISS
1200
520
pF
pF
pF
Output Capacitance
COSS
CRSS
VGS=0V, VDS=-25V, f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
250
QG
QGS
QGD
tD(ON)
tR
63
13
29
nC
nC
nC
ns
ns
ns
ns
ID=-16A, VDS=-44V, VGS=-10V
(Note 2)
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-ON Delay Time
Rise Time
14
66
39
63
VDD=-28V, ID=-16A, RG=6.8ꢀ
RD=1.6ꢀ (Note 2)
Turn-OFF Delay Time
Fall Time
tD(OFF)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body Diode Continuous Source
Current
IS
-31
-110
-1.3
A
A
V
Maximum Body-Diode Pulsed Current
(Note 1)
ISM
TJ=25°C, IS=-16A, VGS=0V
(Note 2)
Drain-Source Diode Forward Voltage
VSD
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
tRR
71
110
250
ns
TJ=25°C, IF=-16A,
di/dt=-100A/µs (Note 2)
QRR
170
nC
Note: 1. Repetitive rating; pulse width limited by max. junction temperature.
2. Pulse width≤300µs; duty cycle≤2%.
UNISONIC TECHNOLOGIES CO., LTD
3 of 6
QW-R502-842.a
www.unisonic.com.tw
UF5305
Preliminary
POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
UNISONIC TECHNOLOGIES CO., LTD
4 of 6
QW-R502-842.a
www.unisonic.com.tw
UF5305
Preliminary
POWER MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
VDS
RG
L
-
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width
Gate Pulse Period
VGS
D=
10V
(Driver)
I
FM, Body Diode Forward Current
ISD
di/dt
(DUT)
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
UNISONIC TECHNOLOGIES CO., LTD
5 of 6
QW-R502-842.a
www.unisonic.com.tw
UF5305
Preliminary
POWER MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
6 of 6
QW-R502-842.a
www.unisonic.com.tw
相关型号：
©2020 ICPDF网 联系我们和版权申明