UF540L-TA3-T [UTC]
27A, 100V N-CHANNEL POWER MOSFET; 27A ， 100V N沟道功率MOSFET
| 型号： | UF540L-TA3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 27A, 100V N-CHANNEL POWER MOSFET |
| 文件： | 总3页 (文件大小：151K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UF540
Preliminary
Power MOSFET
27A, 100V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC UF540 is an N-channel enhancement mode power
MOSFET using UTC’s advanced technology to provide the
customers with a minimum on-state resistance and high switching
speed.
The UTC UF540 is suitable for AC&DC motor controls and
switching power supply, etc
FEATURES
* RDS(on) <85mΩ @VGS = 10 V,ID=15A
* High Switching Speed
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
TO-220
Packing
Tube
Lead Free
Halogen Free
UF540G-TA3-T
1
2
3
UF540L-TA3-T
G
D
S
Note: Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R502-715.a
UF540
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VDSS
RATINGS
100
UNIT
V
Drain-Source Voltage (Note 2)
Gate-Source Voltage
VGSS
±20
V
TC=25°C
27
A
Continuous
ID
Drain Current
TC=100°C
17
A
Pulsed
Power Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
IDM
PD
108
A
125
W
°C
°C
TJ
+150
-55~+150
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. TJ = +25~+150°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
1.0
UNIT
°C/W
Junction to Case
θJC
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
ID=250µA, VGS=0V
VDS=100V, VGS=0V
VGS=+20V, VDS=0V
100
V
250 µA
+500 nA
-500 nA
Forward
Reverse
Gate-Source Leakage Current
IGSS
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=15A
2.0
4.0
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
0.085
Ω
CISS
COSS
CRSS
1960
250
40
pF
pF
pF
Output Capacitance
VGS=0V, VDS=25V, f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Rise Time
tD(ON)
tR
tD(OFF)
tF
11
35
39
35
71
14
21
ns
ns
VDD=45V, ID=15A, VGS=10V,
RGEN=5.1Ω (Fig.1, 2)
Turn-OFF Delay Time
Fall-Time
ns
(Note 2)
ns
Total Gate Charge
QG
VDD=35V, ID=27A, VGS=10V,
nC
nC
nC
Gate to Source Charge
Gate to Drain Charge
QGS
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Notes: 1. Pulse width limited by TJ
VSD
trr
IS=27A, VGS=0V
2.0 2.5
300
V
ns
A
IS=4.0A, dIS/dt=25A/µs
IS
27
ISM
108
A
2. Switching time measurements performed on LEM TR-58 Test equipment
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-715.a
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UF540
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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