UF9Z24G-TF3-T [UTC]

P-CHANNEL POWER MOSFET;
UF9Z24G-TF3-T
型号: UF9Z24G-TF3-T
厂家: Unisonic Technologies    Unisonic Technologies
描述:

P-CHANNEL POWER MOSFET

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中文:  中文翻译
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UNISONIC TECHNOLOGIES CO., LTD  
UF9Z24  
Power MOSFET  
12A, 55V P-CHANNEL  
POWER MOSFET  
1
1
TO-220F  
TO-220  
DESCRIPTION  
The UTC UF9Z24 is a P-channel power MOSFET using UTC’s  
advanced technology to provide the customers with high switching  
speed, cost-effectiveness and minimum on-state resistance. It can  
also withstand high energy in the avalanche.  
1
1
TO-220F2  
TO-220F1  
FEATURES  
* RDS(ON)<175m@ VGS=-10V, ID=-12A  
* High Switching Speed  
1
TO-252  
SYMBOL  
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free  
Halogen Free  
1
2
3
UF9Z24L-TA3-T  
UF9Z24L-TF3-T  
UF9Z24L-TF1-T  
UF9Z24L-TF2-T  
UF9Z24L-TN3-T  
UF9Z24L-TN3-R  
UF9Z24G-TA3-T  
UF9Z24G-TF3-T  
UF9Z24G-TF1-T  
UF9Z24G-TF2-T  
UF9Z24G-TN3-T  
UF9Z24G-TN3-R  
TO-220  
TO-220F  
TO-220F1  
TO-220F2  
TO-252  
G
G
G
G
G
G
D
D
D
D
D
D
S
S
S
S
S
S
Tube  
Tube  
Tube  
Tube  
Tube  
TO-252  
Tape Reel  
Note: Pin Assignment: G: Gate D: Drain  
S: Source  
www.unisonic.com.tw  
1 of 4  
Copyright © 2014 Unisonic Technologies Co., Ltd  
QW-R502-A18.C  
UF9Z24  
Power MOSFET  
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VDSS  
VGSS  
ID  
RATINGS  
-55  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
±20  
V
Continuous  
Pulsed  
TC=25°C  
-12  
A
Drain Current  
IDM  
-48  
A
Single Pulsed Avalanche Current (L=0.1mH)  
Single Pulsed Avalanche Energy (L=0.1mH)(Note 1)  
TO-220  
IAS  
-7.2  
96  
A
EAS  
mJ  
W
W
W
W
°C  
°C  
38  
TO-220F/TO-220F1  
Power Dissipation  
23  
PD  
TO-220F2  
25  
TO-252  
Junction Temperature  
27  
TJ  
+150  
-55~+150  
Storage Temperature  
TSTG  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
THERMAL DATA  
PARAMETER  
TO-220/TO-220F  
SYMBOL  
RATINGS  
62  
UNIT  
°C/W  
TO-220F1/TO-220F2  
TO-252  
Junction to Ambient  
Junction to Case  
θJA  
110  
3.3  
5.5  
5
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
TO-220  
TO-220F/TO-220F1  
TO-220F2  
θJC  
TO-252  
4.6  
Notes: 1. Duty cycle1 %.  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R502-A18.C  
www.unisonic.com.tw  
UF9Z24  
Power MOSFET  
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)  
PARAMETER SYMBOL TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
BVDSS ID=-250µA, VGS=0V  
IDSS VDS=-55V, VGS=0V  
GS=+20V  
VGS=-20V  
-55  
V
-25  
µA  
Forward  
Reverse  
V
+100 nA  
-100 nA  
Gate-Source Leakage Current  
IGSS  
ON CHARACTERISTICS  
Gate Threshold Voltage  
VGS(TH) VDS=VGS, ID=-250µA  
-2.0  
-12  
-4.0  
V
A
Static Drain-Source On-State Resistance  
On State Drain Current (Note 1)  
DYNAMIC PARAMETERS (Note 2)  
Input Capacitance  
RDS(ON) VGS=-10V, ID=-12A (Note 1)  
0.175  
ID(ON)  
VGS=-10V, VDS=-5V  
CISS  
COSS  
CRSS  
350  
170  
92  
pF  
pF  
pF  
VGS=0V, VDS=-25V, f=1.0MHz  
(Note 2)  
Output Capacitance  
Reverse Transfer Capacitance  
SWITCHING PARAMETERS  
Total Gate Charge  
QG  
QGS  
QGD  
tD(ON)  
tR  
52  
6.6  
12  
13  
55  
23  
37  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
VGS=-10V, VDS=-44V,  
ID=-7.2A (Note 3)  
Gate to Source Charge  
Gate to Drain Charge  
Turn-ON Delay Time  
Rise Time  
VDD=-28V, ID=-7.2A, RG=24ꢀ  
, RD=3.7(Note 3)  
Turn-OFF Delay Time  
Fall-Time  
tD(OFF)  
tF  
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS (Note 2)  
Maximum Body-Diode Continuous Current  
Maximum Body-Diode Pulsed Current  
Drain-Source Diode Forward Voltage  
IS  
-12  
-48  
-1.6  
A
A
V
ISM  
VSD  
IF=-12A, VGS=0V (Note 1)  
Notes: 1. Pulse test; pulse width 300 µs, duty cycle 2 %.  
2. Guaranteed by design, not subject to production testing.  
3. Independent of operating temperature.  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R502-A18.C  
www.unisonic.com.tw  
UF9Z24  
Power MOSFET  
TYPICAL CHARACTERISTICS  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R502-A18.C  
www.unisonic.com.tw  

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