UN1518G-AE3-R [UTC]
POWER (SWITCHING) TRANSISTOR; 电源（开关）晶体管
| 型号： | UN1518G-AE3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | POWER (SWITCHING) TRANSISTOR |
| 文件： | 总3页 (文件大小：173K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UN1518
NPN SILICON TRANSISTOR
POWER (SWITCHING)
TRANSISTOR
FEATURES
* Bipolar Power Transistor
* High Current Switching
* High hFE
* Low VCE(SAT)
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
SOT-23
Lead Free Plating
UN1518L-AE3-R
Halogen Free
UN1518G-AE3-R
1
2
3
E
B
C
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 3
QW-R206-088.C
UN1518
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C, unless otherwise stated)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
20
20
V
5
6
V
Pulse (Note 2)
DC
A
Collector Current
IC
2.5
A
Base Current
IB
500
mA
mW
°С
Total Device Dissipation
Storage Temperature
PD
625
TSTG
-50 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width=300ms. Duty cycle ≤2%
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
BVCBO IC=100µA
20
20
5
100
27
V
V
BVCEO IC=10mA (Note)
BVEBO IE=100µA
8.3
V
ICBO
IEBO
ICES
VCB=16V
100
100
100
15
nA
nA
nA
mV
Emitter Cut-Off Current
VEB=4V
Collector Emitter Cut-Off Current
VCES=16V
IC=0.1A, IB=10mA
IC=1A, IB=10mA
IC=2.5A, IB=50mA
10
70
Collector-Emitter Saturation Voltage (Note) VCE(SAT)
150
200
130
Base-Emitter Saturation Voltage (Note)
Base-Emitter Turn-On Voltage (Note)
VBE(SAT) IC=2.5A, IB=50mA
VBE(ON) VCE=2V, IC=2.5A
VCE=2V, IC=10mA
0.89 1.0
0.79 1.0
V
V
200 400
300 450
200 360
100 180
100 140
23
VCE=2V, IC=200mA
hFE
DC Current Gain (Note)
VCE=2V, IC=2A
VCE=2V, IC=6A
Transition Frequency
Output Capacitance
fT
VCE=10V, IC=50mA, f=100MHz
VCB=10V, f=1MHz
MHz
pF
COB
t(ON)
t(OFF)
30
Turn-On Time
170
nS
VCC=10V, IC=1A IB1=-IB2=10mA
Turn-Off Time
400
nS
Note: Pulse width=300ms. Duty cycle ≤2%
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R206-088.C
www.unisonic.com.tw
UN1518
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS (Ta=25°C)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R206-088.C
www.unisonic.com.tw
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UTC
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