UP1753L-TN3-T [UTC]
Small Signal Bipolar Transistor,;型号: | UP1753L-TN3-T |
厂家: | Unisonic Technologies |
描述: | Small Signal Bipolar Transistor, 开关 晶体管 |
文件: | 总4页 (文件大小:217K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UP1753
NPN SILICON TRANSISTOR
HIGH CURRENT LOW VCE(SAT)
TRANSISTOR
1
DESCRIPTION
TO-252
The UTC UP1753 is specially designed to have high current and
low VCE(SAT) to suit for power amplifier application and power
switching application.
FEATURES
1
*VCE(SAT) typ is below 300mV at 5A
* Max continuous current 6 A
* BVCEO is 100V minimum
SOT-223
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
Lead Free
Halogen Free
1
B
B
B
2
C
C
C
3
E
E
E
UP1753L-AA3-R
UP1753L-TN3-T
UP1753L-TN3-R
UP1753G-AA3-R
UP1753G-TN3-T
UP1753G- TN3-R
SOT-223
TO-252
TO-252
Tape Reel
Tube
Tape Reel
MARKING INFORMATION
PACKAGE
MARKING
SOT-223
TO-252
www.unisonic.com.tw
1 of 4
Copyright © 2014 Unisonic Technologies Co., Ltd
QW-R220-020.D
UP1753
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
200
100
V
6
V
Peak Pulse Current
10
A
Continuous Collector Current
IC
6
0.8
A
SOT-223
TO-252
W
W
°C
°C
Power Dissipation (TA =25°C)
PD
1
Junction Temperature
Storage Temperature
TJ
+150
-55 ~ +150
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
BVCBO IC=100µA
200
100
6
300
120
8
V
V
BVCEO IC=10mA (Note1)
BVEBO IE=100µA
V
ICBO
ICER
IEBO
VCB=150V
10
10
nA
nA
nA
Collector Cut-Off Current
VCE=150V, R≤1KΩ
VEB=6V
Emitter Cut-Off Current
10
IC=0.1A, IB=5mA (Note1)
50
Collector-Emitter Saturation Voltage
VCE(SAT) IC=2A, IB=100mA (Note1)
IC=5A, IB=500mA (Note1)
150
330
mV
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
VBE(SAT) IC=5A, IB=500mA (Note1)
VBE(ON) IC=5A, VCE =2V (Note1)
IC=10mA, VCE =2V
1250 mV
1100 mV
100
100
50
200
200
100
IC=2A, VCE =2V (Note1)
hFE
300
Static Forward Current Transfer Ratio
IC=4A, VCE =2V (Note1)
IC=10A, VCE =2V (Note1)
20
Transition Frequency
Output Capacitance
fT
IC=100mA, VCE =10V f=50MHz
VCB=10V, f=1MHz
100
38
MHz
pF
COB
tON
50
ns
IC=1A, VCC =10V
IB1=IB2=100mA
Switching Times
tOFF
1600
ns
Note: 1.Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%,
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R220-020.D
www.unisonic.com.tw
UP1753
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Collector-Emitter Saturation Voltage vs.
Collector Current
DC Current Gain vs. Collector Current
1.6
0.8
0.6
1.4
1.2
VCE=5V
VCE=1V
1.0
0.8
IC/IB=10
0.4
IC/IB=50
0.6
0.4
0.2
0.2
0
0
0.01
0.01
0.1
1
10
100
0.1
1
10
100
Collector Current, IC (A)
Collector Current, IC (A)
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
QW-R220-020.D
www.unisonic.com.tw
UP1753
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R220-020.D
www.unisonic.com.tw
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