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UP1851G-AA3-R [UTC]

Power Bipolar Transistor;
UP1851G-AA3-R
型号： UP1851G-AA3-R
厂家： Unisonic Technologies    Unisonic Technologies
描述：

Power Bipolar Transistor

光电二极管 晶体管
文件： 总4页 (文件大小：180K)
中文：  中文翻译
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UNISONIC TECHNOLOGIES CO., LTD  
UP1851  
PNP SILICON TRANSISTOR  
HIGH CURRENT  
(HIGH PERFORMANCE)  
TRANSISTORS  
„
FEATURES  
1
* 5 A continuous current , up to 15 A peak current  
* Very low saturation voltages  
SOT-223  
* Excellent gain characteristics specified up to 10A  
* PD = 3W  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Packing  
Package  
SOT-223  
Lead Free  
Halogen Free  
1
2
3
UP1851L-AA3-R  
UP1851G-AA3-R  
B
C
E
Tape Reel  
www.unisonic.com.tw  
1 of 4  
Copyright © 2012 Unisonic Technologies Co., Ltd  
QW-R207-018.B  
UP1851  
PNP SILICON TRANSISTOR  
„
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
Collector-Base Voltage  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
RATINGS  
UNIT  
V
-100  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-60  
V
-6  
V
Peak Pulse Current  
-15  
A
Continuous Collector Current  
Power Dissipation (TA=25°C)  
Junction Temperature  
Storage Temperature  
IC  
-5  
3
A
PD  
W
℃
℃
TJ  
+150  
TSTG  
-55 ~ +150  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
BVCBO  
BVCER  
BVCEO  
BVEBO  
ICBO  
TEST CONDITIONS  
IC=-100μ A  
IC=-1μA, RB≦1KΩ  
MIN TYP MAX UNIT  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
-100 -140  
-100 -140  
V
V
IC=-10mA (Note)  
-60  
-6  
-90  
-8  
V
IE=-100μA  
V
VCB=-80V  
-150  
-150  
-50  
nA  
nA  
nA  
Collector Cut-Off Current  
ICER  
VCB=-80V, R≤1kΩ  
VEB=-6V  
Emitter Cut-Off Current  
IEBO  
IC=-100mA, IB=-10mA  
IC=-1A, IB=-100mA  
IC=-2A, IB=-200mA  
IC=-5A, IB=-500mA  
IC=-5A, IB=-500mA (Note)  
IC=-5A, VCE=-1V (Note)  
IC=-10mA, VCE=-1V  
IC=-2A, VCE=-1V  
-20  
-85  
-50  
-140  
Collector-Emitter Saturation Voltage  
(Note)  
VCE(SAT)  
mV  
-155 -210  
-370 -460  
Base-Emitter Saturation Voltage  
Base-Emitter Turn-On Voltage  
VBE(SAT)  
VBE(ON)  
-1080 -1240 mV  
-935 -1070 mV  
200  
100  
100  
75  
200  
90  
300  
DC Current Gain (Note)  
hFE  
IC=-5A, VCE=-1V  
IC=-10A, VCE=-1V  
IC=-100mA, VCE=-10V, f=50MHz  
VCB=-10V, f=1MHz  
IC=-2A, IB1=-200mA  
IB2=200mA, VCC=-10V  
10  
25  
Transition Frequency  
Output Capacitance  
fT  
120  
74  
MHz  
pF  
COBO  
tON  
82  
Switching Times  
ns  
tOFF  
350  
Note: Pulse width=300μs. Duty cycle≤2%  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R207-018.B  
www.unisonic.com.tw  
UP1851  
PNP SILICON TRANSISTOR  
„
TYPICAL CHARACTERISTICS  
Collector-Emitter Saturation Voltage vs.  
Collector Current  
Collector-Emitter Saturation Voltage vs.  
Collector Current  
TA=25oC  
IC/IB=10  
1.6  
1.6  
1.4  
1.2  
1.4  
1.2  
IC/IB=50  
-55oC  
1.0  
0.8  
1.0  
0.8  
+25oC  
+175oC  
0.6  
0.4  
0.2  
0
0.6  
0.4  
0.2  
0
IC/IB=10  
0.001  
0.01  
0.1  
1
10 20  
0.001  
0.01  
0.1  
1
10 20  
Collector Current, IC (A)  
Collector Current, IC (A)  
Base-Emitter Saturation Voltage vs.  
Collector Current  
DC Current Gain vs. Collector Current  
VCE=1V  
IC/IB=10  
1.6  
1.6  
1.4  
300  
1.4  
1.2  
+100oC  
1.2  
1.0  
0.8  
1.0  
0.8  
200  
100  
+25oC  
-55oC  
-55oC  
+25oC  
0.6  
0.4  
+100oC  
0.6  
0.4  
+175oC  
0.2  
0
0.001  
0.2  
0
0.001 0.01  
0.1  
1
10 20  
0.01  
0.1  
1
10 20  
Collector Current, IC (A)  
Collector Current, IC (A)  
Safe Operating Area  
Single Pulse Test at TA=25°C  
Base-Emitter Turn-On Voltage vs.  
Collector Current  
100  
VCE =1V  
1.6  
1.4  
0.1ms  
1.2  
10  
1
100ms  
1s  
1.0  
0.8  
-55oC  
+25oC  
D.C  
0.6  
0.4  
+100oC  
+175oC  
0.1  
0.2  
0
0.001  
0.1  
0.01  
1
10 20  
1
10  
100  
0.1  
Collector Current, IC (A)  
Collector Voltage, VCE (V)  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R207-018.B  
www.unisonic.com.tw  
UP1851  
PNP SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R207-018.B  
www.unisonic.com.tw  

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