UP1853_15 [UTC]

HIGH CURRENT SWITCHING APPLICATION;
UP1853_15
型号: UP1853_15
厂家: Unisonic Technologies    Unisonic Technologies
描述:

HIGH CURRENT SWITCHING APPLICATION

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文件: 总4页 (文件大小:144K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
UP1853  
PNP SILICON TRANSISTOR  
HIGH CURRENT  
(HIGH PERFORMANCE)  
TRANSISTORS  
„
FEATURES  
* 5A Continuous Current , up to 10A peak current  
* Very Low Saturation Voltages  
* Excellent Gain Characteristics Specified up to 10A  
* PD = 3W  
„
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Packing  
Package  
SOT-223  
Lead Free  
Halogen Free  
UP1853G-AA3-R  
1
2
3
UP1853L-AA3-R  
B
C
E
Tape Reel  
www.unisonic.com.tw  
Copyright © 2012 Unisonic Technologies Co., Ltd  
1 of 4  
QW-R207-019.C  
UP1853  
PNP SILICON TRANSISTOR  
„
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
RATINGS  
-140  
-100  
-6  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
Peak Pulse Current  
-10  
A
Continuous Collector Current  
Power Dissipation (TA=25°C)  
Junction Temperature  
Storage Temperature  
IC  
-5  
A
PD  
3
W
°C  
°C  
TJ  
+150  
-55~+150  
TSTG  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)  
PARAMETER SYMBOL TEST CONDITIONS MIN  
BVCBO IC=-100μ A  
TYP MAX UNIT  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
-140 -170  
-140 -170  
-100 -120  
V
V
IC=-1μA, RB1KΩ  
BVCER  
BVCEO IC=-10mA (Note)  
BVEBO IE=-100μA  
V
-6  
-8  
V
ICBO  
ICER  
IEBO  
VCB=-100V  
-200  
-200  
-50  
nA  
nA  
nA  
Collector Cut-Off Current  
VCB=-100V, R1kΩ  
VEB=-6V  
Emitter Cut-Off Current  
IC=-100mA, IB=-10mA  
IC=-1A, IB=-100mA  
IC=-2A, IB=-200mA  
IC=-4A, IB=-400mA  
-20  
-90  
-50  
-115  
VCE(SAT)  
(Note)  
Collector-Emitter Saturation Voltage  
mV  
-160 -220  
-300 -420  
Base-Emitter Saturation Voltage  
Base-Emitter Turn-On Voltage  
VBE(SAT) IC=-4A, IB=-400mA (Note)  
VBE(ON) IC=-4A, VCE=-1V (Note)  
IC=-10mA, VCE=-1V  
-1010 -1170 mV  
-925 -1160 mV  
200  
100  
100  
50  
IC=-1A, VCE=-1V  
hFE  
200  
90  
300  
DC Current Gain  
IC=-3A, VCE=-1V  
(Note)  
IC=-4A, VCE=-1V  
30  
50  
IC=-10A, VCE=-1V  
15  
Transition Frequency  
Output Capacitance  
fT  
IC=-100mA, VCE=-10V f=50MHz  
VCB=-10V, f=1MHz  
125  
65  
MHz  
pF  
COB  
tON  
110  
460  
IC=-2A, IB1=-200mA, IB2=200mA,  
Switching Times  
ns  
VCC=-10V  
tOFF  
Note: Pulse width=300μs. Duty cycle2%  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R207-019.C  
www.unisonic.com.tw  
UP1853  
PNP SILICON TRANSISTOR  
„
TYPICAL CHARACTERISTICS  
Collector-Emitter Saturation Voltage vs.  
Collector Current  
Collector-Emitter Saturation Voltage vs.  
Collector Current  
TA=25°C  
IC/IB=10  
1.6  
1.6  
1.4  
1.2  
1.4  
1.2  
IC/IB=50  
-55°C  
+25°C  
+175°C  
1.0  
0.8  
1.0  
0.8  
0.6  
0.4  
0.2  
0
0.6  
0.4  
0.2  
0
IC/IB=10  
0.001  
0.01  
0.1  
1
10 20  
0.001  
0.01  
0.1  
1
10 20  
Collector Current, IC (A)  
Collector Current, IC (A)  
Base-Emitter Saturation Voltage vs.  
Collector Current  
DC Current Gain vs. Collector Current  
VCE=1V  
IC/IB=10  
1.6  
1.6  
1.4  
1.4  
1.2  
+100°C  
1.2  
1.0  
0.8  
1.0  
0.8  
+25°C  
-55°C  
-55°C  
+25°C  
0.6  
0.4  
0.6  
0.4  
+100°C  
+175°C  
0.2  
0
0.001  
0.2  
0
0.001  
0.01  
0.1  
1
10 20  
0.01  
0.1  
1
10 20  
Collector Current, IC (A)  
Collector Current, IC (Amps)  
Safe Operating Area  
Single Pulse Test at Ta=25°C  
Base-Emitter Turn-On Voltage vs.  
Collector Current  
10  
1
100ms  
0.1ms  
1.0ms  
IC/IB=10  
10ms  
1.6  
1.4  
1s  
D.C  
1.2  
1.0  
0.8  
-55°C  
+25°C  
0.6  
0.4  
+100°C  
0.1  
+175°C  
0.2  
0
0.001  
0.01  
0.01  
0.1  
1
10 20  
1
10  
100  
0.1  
Collector Current, IC (A)  
Collector Voltage, VCE (V)  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R207-019.C  
www.unisonic.com.tw  
UP1853  
PNP SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R207-019.C  
www.unisonic.com.tw  

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