UP1855AL-A-AA3-R [UTC]
Small Signal Bipolar Transistor, 4A I(C), 170V V(BR)CEO, 1-Element, PNP, Silicon, LEAD FREE PACKAGE-4;
| 型号： | UP1855AL-A-AA3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Small Signal Bipolar Transistor, 4A I(C), 170V V(BR)CEO, 1-Element, PNP, Silicon, LEAD FREE PACKAGE-4 开关 光电二极管 晶体管 |
| 文件： | 总4页 (文件大小：173K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UP1855A
PNP SILICON TRANSISTOR
HIGH CURRENT TRANSISTOR
FEATURES
* High current switching
* Low VCE(SAT)
1
* High hFE
SOT-223
1
TO-126
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
Lead Free
Halogen Free
1
B
E
2
C
C
3
E
B
UP1855AL-x-AA3-R
UP1855AL-x-T60-K
UP1855AG-x-AA3-R
UP1855AG-x-T60-K
SOT-223
TO-126
Tape Reel
Bulk
www.unisonic.com.tw
1 of 4
Copyright © 2013 Unisonic Technologies Co., Ltd
QW-R207-020.E
UP1855A
PNP SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
RATINGS
UNIT
Collector -Base Voltage
Collector -Emitter Voltage
Emitter -Base Voltage
Collector Current (Pulse)
Collector Current (DC)
-180
V
V
V
A
A
-170
-6
-10
IC
-4
SOT-223
TO-126
1
1
Power Dissipation
PD
W
Junction Temperature
Storage Temperature
TJ
+150
°C
°C
TSTG
-40 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
-180
-170
-6
TYP
-210
MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
BVCBO IC = -100µA
BVCEO IC = -10mA
BVEBO IE = -100µA
V
V
V
-8
VCB=-150V
ICBO
-50
-1
nA
µA
Collector Cut-off Current
Emitter Cut-off Current
VCB=-150V, Ta=100°C
IEBO
VEB=-6V
-10
nA
IC=-100mA, IB=-5mA
IC=-500mA, IB=-50mA
IC=-1A, IB=-100mA
IC=-3A, IB=-300mA
-30
-70
-60
mV
mV
mV
mV
mV
mV
-120
-150
-550
Collector-Emitter Saturation Voltage
VCE (SAT)
-110
-275
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
VBE (SAT) IC=-3A, IB=-300mA
VBE (ON) IC=-3A, VCE=-5V
-970 -1110
-830
200
-950
hFE1
hFE2
hFE3
hFE4
IC=-10mA, VCE=-5V
IC=-1A, VCE=-5V
100
100
28
300
DC Current Gain
IC=-3A, VCE=-5V
140
10
IC=-10A, VCE=-5V
Transition Frequency
Output Capacitance
fT
IC=-100mA, VCE=-10V, f=50MHz
VCB=-20V, f=1MHz
IC=-1A, VCC=-50V
110
40
MHz
pF
Cob
tON
68
ns
Switching Times
IB1=-100mA, IB2=100mA
tOFF
1030
ns
Note: Pulse test: tP ≤ 300µs, Duty cycle ≤2%
CLASSIFICATION OF hFE3
RANK
A
B
RANGE
28~75
75(MIN.)
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
www.unisonic.com.tw
QW-R207-020.E
UP1855A
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
www.unisonic.com.tw
QW-R207-020.E
UP1855A
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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www.unisonic.com.tw
QW-R207-020.E
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UTC
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