UP2790L-S08-R [UTC]
Power Field-Effect Transistor;
| 型号： | UP2790L-S08-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Field-Effect Transistor |
| 文件： | 总6页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UP2790
Preliminary
Power MOSFET
SWITCHING N- AND
P-CHANNEL POWER MOSFET
DESCRIPTION
The UTC UP2790 uses advanced technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use in Motor Drive application.
FEATURES
*
Low on-state resistance:
VGS =10V, ID=3A;
N-channel:
RDS(ON) = 28 mΩ (MAX)
V
GS=4.5V, ID=3A;
P-channel: VGS= -10V, ID=-3A;
GS=-4.5V, ID=-3A;
RDS(ON) = 40 mΩ (MAX)
RDS(ON) = 60 mΩ (MAX)
RDS(ON) = 80 mΩ (MAX)
V
*
Low input capacitance
N-channel : CISS with 500 pF (Typ.)
P-channel : CISS with 460 pF (Typ.)
Built-in gate protection diode
Halogen Free
*
*
SYMBOL
ORDERING INFORMATION
Lead Free
Halogen Free
UP2790G-S08-R
UP2790G-S08-T
Package
SOP-8
SOP-8
Packing
Tape Reel
Tube
UP2790L-S08-R
UP2790L-S08-T
www.unisonic.com.tw
1 of 5
Copyright © 2012 Unisonic Technologies Co., Ltd
QW-R502-339.b
UP2790
Preliminary
Power MOSFET
PIN CONFIGURATION
Drain 1
Drain 1
1
Source 1
Gate 1
8
7
2
3
4
Source 2
Drain 2
Drain 2
6
5
Gate 2
UNISONIC TECHNOLOGIES CO., LTD
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UP2790
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (Ta =25°C, unless otherwise specified)
N-Channel
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain to Source Voltage (VGS=0V)
Gate to Source Voltage (VDS=0V)
Continuous Drain Current
30
±20
6
V
A
Pulsed Drain Current (Note 2)
Single Avalanche Current (Note 3)
Single Avalanche Energy (Note 3)
Power Dissipation (Note 4)
Junction Temperature
IDM
24
A
IAS
6
A
EAS
PD
3.6
1.7
+150
mJ
W
°C
°C
TJ
Storage Temperature
TSTG
-55 ~ +150
P-Channel
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain to Source Voltage (VGS=0V)
Gate to Source Voltage (VDS=0V)
Drain Current (DC)
-30
±20
V
-6
A
Pulsed Drain Current (Note 2)
Single Avalanche Current (Note 3)
Single Avalanche Energy (Note 3)
Power Dissipation (Note 4)
Junction Temperature
IDM
-24
A
IAS
-6
A
EAS
PD
3.6
mJ
W
°C
°C
1.7
TJ
150
Storage Temperature
TSTG
-55 ~ +150
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. PW≤10 μs, Duty Cycle≤1%
3. Mounted on ceramic substrate of 2000 mm2 x 1.6 mm
1
L = 0.1mH, VDD =
x VDSS, RG = 25 Ω, Starting TJ = 25°C
4.
2
UNISONIC TECHNOLOGIES CO., LTD
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UP2790
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (Ta =25°C, unless otherwise specified)
N-Channel
PARAMETER
SYMBOL
TEST CONDITIONS
VGS=0V, ID=250uA
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
ON CHARACTERISTICS
BVDSS
IDSS
30
V
VDS =30 V, VGS =0 V
VGS = ±16 V, VDS=0 V
10
µA
IGSS
±10 µA
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS =10V, ID =1mA
VGS =10 V, ID =3 A
VGS =4.5 V, ID =3 A
VGS =4.0 V, ID =3 A
1.5
2.5
V
21
28
34
28 mΩ
40 mΩ
53 mΩ
Static Drain-Source On-State
Resistance (Note)
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
500
135
77
pF
pF
pF
Output Capacitance
VDS =10 V, VGS =0 V, f=1MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-ON Rise Time
tD(ON)
tR
tD(OFF)
tF
9.2
8.8
28
ns
ns
VDD=15V, VGS=10 V
ID=3 A, RG=10 Ω
Turn-OFF Delay Time
Turn-OFF Fall-Time
ns
7.4
12.6
1.7
3.8
ns
Total Gate Charge
QG
nC
nC
nC
Gate to Source Charge
Gate to Drain Charge
QGS
QGD
VDD =24 V, VGS =10 V, ID =6 A
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Diode Continuous Forward Current
Diode Pulse Current
VSD
IS
IS = 6 A, VGS =0V (Note)
0.85
V
6
A
A
ISM
24
P-Channel
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
BVDSS
IDSS
VGS=0V, ID=250uA
-30
V
-10 µA
±10 µA
VDS =-30 V, VGS =0 V
VGS = ±16 V, VDS=0 V
IGSS
VGS(TH)
RDS(ON)
VDS =-10V, ID =-1mA
VGS =-10 V, ID =-3 A
VGS =-4.5 V, ID =-3 A
VGS =-4.0 V, ID =-3 A
-1.0
-2.5
V
43
58
60 mΩ
80 mΩ
Static Drain-Source On-State
Resistance (Note)
65 110 mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
460
130
77
pF
pF
pF
Output Capacitance
VDS =-10 V, VGS =0 V, f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-ON Rise Time
tD(ON)
tR
tD(OFF)
tF
8.5
4.8
42
ns
ns
VDD=-15V, VGS=-10 V
ID=-3 A , RG=10 Ω,
Turn-OFF Delay Time
Turn-OFF Fall-Time
ns
19
ns
Total Gate Charge
QG
11
nC
nC
nC
Gate Source Charge
Gate Drain Charge
QGS
QGD
VDD =-24 V, VGS =-10 V, ID =-6 A
1.7
3.3
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-339.b
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UP2790
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Diode Continuous Forward Current
Diode Pulse Current
VSD
IS
IS = -6A, VGS =0V (Note)
0.92
V
A
A
-6
ISM
-24
Note: Pulsed
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QW-R502-339.b
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UP2790
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-339.b
www.unisonic.com.tw
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