US112N-8 [UTC]
Silicon Controlled Rectifier, 12A I(T)RMS, 12000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN;
| 型号： | US112N-8 |
| 厂家： | 
Unisonic Technologies |
| 描述： | Silicon Controlled Rectifier, 12A I(T)RMS, 12000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN 局域网 栅 栅极 |
| 文件： | 总5页 (文件大小：197K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC US112S/N
SCR
SCRs
DESCRIPTION
The UTC US112S/N is suitable to fit all modes of
control found in applications such as overvoltage
crowbar protection, motor control circuits in power
tools and kitchen aids, in-rush current limiting circuits,
capacitive discharge ignition, voltage regulation
circuits...
1
TO-220
1: CATHODE
SYMBOL
2: ANODE
RATING
3: GATE
ABSOLUTE MAXIMUM RATINGS
UNIT
V
PARAMETER
US112S
US112N
Repetitive peak off-state voltages
US112S/N-4
VDRM
VRRM
400
600
800
12
US112S/N-6
US112S/N-8
RMS on-state current (180° conduction angle) (Tc = 105°C)
Average on-state current (180° conduction angle) (Tc = 105°C)
Non repetitive surge peak on-state current (Tj = 25°C)
tp=8.3ms
IT(RMS)
IT(AV)
A
A
8
ITSM
146
140
98
A
tp=10ms
I²t Value for fusing (tp = 10 ms, Tj = 25°C)
Critical rate of rise of on-state current
(IG = 2 x IGT , tr ≤ 100 n s, F = 60 Hz , Tj = 125°C,)
I²t
A²S
A/µs
A
dI/dt
50
4
Peak gate current (tp=20µs, Tj = 125°C)
Maximum peak reverse gate voltage
Average gate power dissipation (Tj = 125°C)
Storage junction temperature range
IGM
VRGM
PG(AV)
Tstg
Tj
5
V
1
W
°C
°C
-40 ~ +150
-40 ~ +125
Operating junction temperature range
1
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R301-013,B
UTC US112S/N
SCR
UTC US112S(SENSITIVE) ELECTRICAL CHARACTERISTICS
(Tj=25℃unless otherwise specified)
MAX.
200
0.8
PARAMETER
SYMBOL
TEST CONDITIONS
VD = 12 V, RL =140Ω
VD = 12 V, RL=140Ω
MIN
UNIT
µA
V
Gate trigger Current
IGT
Gate trigger Voltage
Gate non-trigger voltage
VGT
VGD
VD = VDRM, RL = 3.3 kΩ, RGK = 1kΩ
0.1
8
V
Tj = 125°C
Reverse gate voltage
Holding Current
VRG
IH
IRG = 10 µA
V
mA
mA
IT = 50 mA, RGK = 1 kΩ
5
6
Latching Current
IL
dV/dt
IG = 1 mA ,RGK = 1 kΩ
Circuit Rate Of Change Of
VD = 67 % VDRM ,RGK = 220 Ω
5
V/µs
V
off-state Voltage
Tj = 125°C
On-state voltage
ITM = 24A, tp = 380 µs, Tj = 25°C
VTM
1.6
Tj = 125°C
Tj = 125°C
Vt0
Rd
0.85
30
V
Threshold Voltage
mΩ
Dynamic Resistance
Off-state Leakage Current
VDRM = VRRM, RGK = 220 Ω
IDRM
IRRM
µA
5
2
Tj = 25°C
mA
Tj = 125°C
UTC US112N(STANDARD) ELECTRICAL CHARACTERISTICS
(Tj=25℃unless otherwise specified)
MAX.
15
PARAMETER
SYMBOL
TEST CONDITIONS
VD = 12 V, RL =33Ω
MIN
2
UNIT
mA
V
Gate trigger Current
IGT
Gate trigger Voltage
VGT
1.3
VD = 12 V, RL=33Ω
Gate non-trigger voltage
VD = VDRM, RL = 3.3 kΩ ,Tj = 125°C
VGD
0.2
V
Holding Current
IT = 500 mA, Gate open
IH
IL
dV/dt
30
60
mA
mA
Latching Current
IG = 1.2 IGT
VD = 67 % VDRM , Gate open, Tj = 125°C
Circuit Rate Of Change Of
200
V/µs
off-state Voltage
On-state voltage
VTM
Vt0
Rd
1.6
V
V
mΩ
ITM = 24A, tp = 380 µs, Tj = 25°C
Tj = 125°C
Tj = 125°C
0.85
Threshold Voltage
Dynamic Resistance
30
Off-state Leakage Current
VDRM = VRRM,
Tj = 25°C
IDRM
IRRM
µA
5
2
mA
Tj = 125°C
THERMAL RESISTANCES
PARAMETER
SYMBOL
Rth(j-c)
Rth(j-a)
VALUE
1.3
60
UNIT
KW
K/W
Junction to case (DC)
Junction to ambient
2
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R301-013,B
UTC US112S/N
SCR
Figure.2:Average and D.C. on-state current
Figure.1:Maximum average power
dissipation vs average on-state current.
vs case temperature
P(W)
12
IT(av)(A)
14
11 α=180°
DC
12
10
10
9
8
α=180°
7
6
5
8
6
4
2
4
360°
3
2
α
1
IT(av)(A)
Tcase(℃)
0
0
12
5
25
50
0
75
100
0
2
3
4
5
6
7
8
9
1
Fig.3-2:Relative variation of thermal impedance
junction to ambient vs pulseduration (recommended
pad layout,FR4 PC board)
Fig.3-1:Relative variation of thermal impedance
junction to case vs pulse duration.
K=<Zth(j-a)/Rth(j-a)>
1.00
K=<Zth(j-c)/Rth(j-c)>
1.0
0.5
0.10
0.01
0.2
0.1
tp(s)
1E+0
tp(s)
1E+0
1E-3
1E-2
1E-1
5E+2
1E-2
1E-1
1E+1
1E+2
Figure.4-1:Relative variation of gate trigger
current,holding current and latching vs
junction temperature (US112S)
Figure.4-2: Relative variation of gate trigger
current,holding current and latching current vs
junction temperature (US112N).
IGT,IH,IL(TJ)/IGT,IH,IL (TJ=25℃)
2.0
IGT,IH,IL(TJ)/IGT,IH,IL (TJ=25℃)
2.4
1.8
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.6
1.4
IGT
IGT
1.2
1.0
0.8
IH&IL
Rgk=1kΩ
IH&IL
0.6
0.4
0.2
0.0
Tj(℃)
Tj(℃)
-40
-20
0
20
40
60
80
100
120
140
-40
-20
0
20
40
60
80
100
120
140
3
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R301-013,B
UTC US112S/N
SCR
Figure.5:Relative variation of holding current vs
Fig.6: Relative variation of dV/dt immunity vs gate-
cathode resistance(typical values) (US112S)
gate-cathode resistance(typical values)
(US112S)
IH(Rgk)/IH(Rgk=1kΩ)
dV/dt(Rgk)/dV/dt(Rgk=220Ω)
5.0
4.5
10.0
1.0
Ta=25℃
Tj=125℃
VD=0.67* VDRM
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
Rgk(kΩ)
Rgk(Ω)
0.4
0.1
01.0E-2
1E-1
1E+0
0.0
1.2
0.2
0.6
0.8
1.0
1E+1
Fig.8: Surge peak on-state current vs number of cycles
dV/dt(Rgk)/dV/dt(Rgk=220Ω)
Fig.7: Relative variation of dV/dt immunity vs gate-
cathode capacitance(typical values) (US112S)
dV/dt(Cgk)/dV/dt(Rgk=220Ω)
10.0
4.0
3.5
Tj=125℃
VD=0.67* VDRM
VD=0.67* VDRM
Tj=125℃
Rgk=220Ω
3.0
2.5
2.0
1.0
1.5
1.0
0.5
0.0
Rgk(Ω)
Cgk(nF)
0.1
0.0
1.2
0.2
0.4
0.6
0.8
1.0
0
150
25
50
75
100
125
Fig.9:Non-repetitive surge peak on-state current for a
sinusoidal pulse with width tp<10ms, and corresponding
values of I2t.
Fig.10: On-state characteristics(maximum values).
2
ITSM(A),I t(A2s)
ITSM
2000
1000
200
100
Tjinitial=25℃
ITSM
Tj=max:
Vto=0.85V
Rd=30mΩ
US112N
US112S
I2t
dI/dt
limitation
Tj=Tjmax.
US112N
US112S
10
1
100
10
Tj=25℃
VTM(V)
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
tp(ms)
0.0
0.5
0.01
0.10
1.00
10.00
4
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R301-013,B
UTC US112S/N
SCR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
5
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R301-013,B
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