UT100N03L-TQ2-T [UTC]
100A, 30V N-CHANNEL POWER MOSFET; 100A , 30V N沟道功率MOSFET型号: | UT100N03L-TQ2-T |
厂家: | Unisonic Technologies |
描述: | 100A, 30V N-CHANNEL POWER MOSFET |
文件: | 总5页 (文件大小:275K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT100N03
Power MOSFET
100A, 30V N-CHANNEL
POWER MOSFET
1
TO-220
DESCRIPTION
The UT100N03 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation with
low gate voltages. This device is suitable for use as a load
switch or in PWM applications.
1
TO-251
FEATURES
* RDS(ON)= 5.3mΩ@VGS=10 V
* RDS(ON) = 8.0mΩ@VGS=4.5 V
SYMBOL
1
2.Drain
TO-263
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
D
D
D
D
3
S
S
S
S
UT100N03L-TA3-T
UT100N03L-TM3-T
UT100N03L-TQ2-R
UT100N03L-TQ2-T
UT100N03G-TA3-T
UT100N03G-TM3-T
UT100N03G-TQ2-R
UT100N03G-TQ2-T
TO-220
TO-251
TO-263
TO-263
G
G
G
G
Tube
Tube
Tape Reel
Tube
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UT100N03
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC =25℃, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
30
±20
V
Continuous Drain Current
100
A
Pulsed Drain Current (Note 2)
IDM
400
A
Single Pulsed Avalanche Current (Note 3)
Single Pulsed Avalanche Energy (Note 3)
IAS
35
A
EAS
875
mJ
TO-220/TO-263
100
Power Dissipation
W
TO-251
50
PD
TO-220/TO-263
TO-251
0.67
0.4
Derate above 25℃
W/℃
Junction Temperature
Strong Temperature
TJ
+175
-55 ~ +175
℃
℃
TSTG
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by maximum junction temperature
L = 0.5mH, IAS = 35A, VDD = 25V, RG = 25Ω, Starting TJ = 25℃.
3.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
TO-220/TO-263
TO-251
℃/W
Junction to Ambient
Junction to Case
θJA
110
TO-220/TO-263
TO-251
1.5
℃/W
θJC
2.5
ELECTRICAL CHARACTERISTICS (TJ =25℃, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS(Note2)
Gate Threshold Voltage
BVDSS
IDSS
VGS =0 V, ID =250 µA
30
V
VDS=30 V,VGS =0 V
1
µA
IGSS
VDS =0 V, VGS = ±20 V
±100 nA
VGS(TH)
RDS(ON)
VDS =VGS, ID =250 µA
VGS =10 V, ID =50 A
VGS =4.5 V, ID =40 A
1
3
V
3.05 5.3
Static Drain-Source On-Resistance
mΩ
4.2
8
DYNAMIC PARAMETERS(Note3)
Input Capacitance
CISS
COSS
CRSS
9500
800
V
DS =15V, VGS =0V, f=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS(Note3)
Total Gate Charge
300
QG
QGS
QGD
tD(ON)
tR
50
20.8
19
65
VDS =15V, VGS =5V, ID =16A
nC
ns
Gate Source Charge
Gate Drain Charge
Turn-ON Delay Time
25.7 50
10 20
128 200
Turn-ON Rise Time
VDD=15V, ID =1A, RGEN =6ꢀ
VGS =10 V
Turn-OFF Delay Time
Turn-OFF Fall-Time
tD(OFF)
tF
34
70
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Drain-Source Diode Forward Current
VSD
IS
IS=20 A,VGS=0 V
1.5
90
V
A
Note: 1. Pulse Test : Pulse Width < 300μs, Duty Cycle < 2%.
2. Guaranteed by design, not subject to production testing.
UNISONIC TECHNOLOGIES CO., LTD
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UT100N03
Power MOSFET
TEST CIRCUIT AND WAVEFORM
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UT100N03
Power MOSFET
TYPICAL CHARACTERISTICS
Output Characteristics
Transfer Characteristics
50
40
30
100
80
60
40
20
0
VGS=10,8,6,4V
VGS=3V
20
10
0
25℃
TJ=125℃
-55℃
4
0
1
3
4
5
0
1
2
2
3
Drain to Source Voltage,VDS (V)
Gate to Source Voltage,VGS (V)
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UT100N03
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Normalized Thermal Transient Impedanc Curve
100
10-1
10-2
D=0.5
0.2
0.1
PDM
t1
0.05
0.02
t2
1.RθJC(t)=r(t)*RθJC
0.01
2.RθJC=See Datasheet
3.TJM-TC=P*RθJC(t)
4.Duty Cycle,D=t1/t2
Single Pulse
10-5
10-4
10-3
10-2
10-1
100
101
Square Wave Pulse Duration (sec)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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