UT12N10L-TN3-R [UTC]
12 Amps, 100 Volts N-CHANNEL POWER MOSFET; 12安培， 100伏特N沟道功率MOSFET
| 型号： | UT12N10L-TN3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | 12 Amps, 100 Volts N-CHANNEL POWER MOSFET |
| 文件： | 总4页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT12N10
Preliminary
Power MOSFET
12 Amps, 100 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC UT12N10 is an N-channel mode Power FET using
UTC’s advanced technology to provide custumers with minimum
on-state resistance by extremely high dense cell design. Moreover,
it‘ s good at handing high power and current.
FEATURES
* 100V, 12A, RDS(ON) = 180mΩ @VGS = 10V.
* Be good at handing high power and current.
* Very high dense cell design for super low RDS(ON)
* Lead free product is acquired.
.
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
TO-252
Packing
Lead Free
Halogen Free
1
2
3
UT12N10L-TN3-R
UT12N10G-TN3-R
G
D
S
Tape Reel
Note: Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R502-508.b
UT12N10
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
100
±20
V
Continuous
12
A
Drain Current
Pulsed (Note 1)
IDM
44
A
Power Dissipation
PD
43
W/°C
°C
°C
Junction Temperature
Storage Temperature
TJ
+150
-55~+150
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Note:1 Repetitive Rating: Pulse width limited by maximum junction temperature
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
θJA
RATINGS
UNIT
°C/W
°C/W
Junction to Ambient (Note 2)
Junction to Case
50
θJC
3.5
Note: θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal
reference is defined as the solder mounting surface of the drain pins.
θ
JC is guaranteed by design while θJA is determined by the user’s board design.
Note:2 When mounted on a 1 in2 pad of 2 oz copper
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-508.b
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UT12N10
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
ID=250µA, VGS=0V
100
V
VDS=100V, VGS=0V
VGS=+20V, VDS=0V
1
µA
Forward
Reverse
+100 nA
-100 nA
Gate- Source Leakage Current
IGSS
VGS=-20V, VDS=0V
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC PARAMETERS (Note 2)
Input Capacitance
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=250µA
VGS=10V, ID=6A
VDS=10V, ID=6A
2
4
V
150 180 mΩ
5
S
CISS
COSS
CRSS
430
90
pF
pF
pF
VGS=0V, VDS=25V, f=1.0MHz
VGS=10V, VDS=80V, ID=12A
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS (Note 2)
Total Gate Charge
20
QG
QGS
QGD
tD(ON)
tR
8
1.5
2
16
nC
nC
nC
ns
ns
ns
ns
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
12
7
24
14
35
6
Rise Time
VDD=80V, ID=12A, VGS=10V,
RG=9.1Ω
Turn-OFF Delay Time
tD(OFF)
tF
18
3
Fall-Time
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Drain-Source Diode Forward Voltage
(Note 1)
IS
12
A
V
VSD
IS=12A, VGS=0V
1.2
Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Guaranteed by design, not subject to production testing.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-508.b
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UT12N10
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VGS
VDD
ton
toff
td(on)
td(off)
90%
Inverted
tr
tf
90%
RL
RGEN
VOUT
VIN
10%
90%
VOUT
10%
D
G
50%
50%
V
IN10%
S
Pulse Width
Switching Waveforms
Switching Test Circuit
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-508.b
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