UT16N10G-K08-3030-R [UTC]
Power Field-Effect Transistor,;
| 型号： | UT16N10G-K08-3030-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总9页 (文件大小：464K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT16N10
POWER MOSFET
16A, 100V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC UT16N10 is a N-channel mode power MOSFET
using UTC’s advanced technology to provide customers with a
minimum on-state resistance, low gate charge and high switching
speed.
The UTC UT16N10 is suitable for high voltage synchronous
rectifier and DC/DC converters, etc.
FEATURES
* RDS(ON) ≤ 108mΩ @ VGS=10V, ID=8.0A
DS(ON) ≤ 125mΩ @ VGS=4.5V, ID=8.0A
R
* High Switching Speed
* High Cell Density Trench Technology
SYMBOL
(5, 6, 7, 8) Drain
2.Drain
(4) Gate
1.Gate
3.Source
(1, 2, 3) Source
DFN3030-8
TO-252
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
TO-252
Packing
Lead Free
Halogen Free
UT16N10G-TN3-R
1
G
S
2
D
S
3
S
S
4
-
5
-
6
-
7
-
8
-
UT16N10L-TN3-R
Tape Reel
Tape Reel
UT16N10L-K08-3030-R UT16N10G-K08-3030-R DFN3030-8
G
D
D
D
D
Note: Pin Assignment: G: Gate
D: Drain
S: Source
www.unisonic.com.tw
1 of 9
Copyright © 2019 Unisonic Technologies Co., Ltd
QW-R209-329.B
UT16N10
Power MOSFET
MARKING
TO-252
DFN3030-8
UNISONIC TECHNOLOGIES CO., LTD
2 of 9
QW-R209-329.B
www.unisonic.com.tw
UT16N10
Power MOSFET
ABSOLUTE MAXIMUM RATING (TC=25°С, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
100
±20
V
Continuous
16
A
Drain Current
Pulsed (Note 2)
IDM
32
A
Avalanche Energy (Note 3)
Single Pulsed (Note 3)
EAS
45
mJ
V/nS
W
Peak Diode Recovery dv/dt (Note 4)
dv/dt
2.6
TO-252
DFN3030-8
43
Power Dissipation
PD
17.9
+100
-55 ~ +100
W
Junction Temperature
TJ
°C
°C
Storage Temperature Range
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=10mH, IAS=3.0A, VDD=50V, RG = 25ꢀ, Starting TJ = 25°C
4. ISD ≤16A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 25°C
THERMAL DATA
PARAMETER
TO-252
SYMBOL
RATINGS
110
UNIT
°C/W
°C/W
°C/W
°C/W
Junction to Ambient
Junction to Case
θJA
DFN3030-8
TO-252
130
2.5 (Note)
7 (Note)
θJC
DFN3030-8
Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
UNISONIC TECHNOLOGIES CO., LTD
3 of 9
QW-R209-329.B
www.unisonic.com.tw
UT16N10
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
ID=250µA, VGS=0V
100
1.0
V
VDS=100V, VGS=0V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
1
µA
Forward
Reverse
+100 nA
-100 nA
Gate-Source Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=8.0A
VGS=4.5V, ID=8.0A
3.0
V
108 mꢀ
125 mꢀ
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
400
48
pF
pF
pF
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge (Note 1)
Gate to Source Charge
Gate to Drain Charge
Turn-on Delay Time (Note 1)
Rise Time
36
QG
QGS
QGD
tD(ON)
tR
17
2.5
6
nC
nC
nC
ns
ns
ns
ns
VDS=80V, VGS=10V, ID=16A
IG=1mA (Note 1, 2)
24
27
84
48
VDS=50V, VGS=10V, ID =16A,
RG =25ꢀ (Note 1, 2)
Turn-off Delay Time
tD(OFF)
tF
Fall-Time
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage (Note 1)
Reverse Recovery Time (Note 1)
IS
ISM
VSD
trr
16
32
A
A
IS=16A, VGS=0V
IS=16A, VGS=0V,
dI/dt=100A/μs
1.4
V
33
34
nS
nC
Reverse Recovery Charge
Qrr
Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
4 of 9
QW-R209-329.B
www.unisonic.com.tw
UT16N10
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
VGS=
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
5 of 9
QW-R209-329.B
www.unisonic.com.tw
UT16N10
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
6 of 9
QW-R209-329.B
www.unisonic.com.tw
UT16N10
Power MOSFET
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
7 of 9
QW-R209-329.B
www.unisonic.com.tw
UT16N10
Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
UNISONIC TECHNOLOGIES CO., LTD
8 of 9
QW-R209-329.B
www.unisonic.com.tw
UT16N10
Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
UNISONIC TECHNOLOGIES CO., LTD
9 of 9
QW-R209-329.B
www.unisonic.com.tw
相关型号：
©2020 ICPDF网 联系我们和版权申明