UT2327 [UTC]
P-CHANNEL ENHANCEMENT MODE; P沟道增强模式
| 型号： | UT2327 |
| 厂家： | 
Unisonic Technologies |
| 描述： | P-CHANNEL ENHANCEMENT MODE |
| 文件： | 总5页 (文件大小：749K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT2327
Power MOSFET
P-CHANNEL
ENHANCEMENT MODE
3
ꢀ
DESCRIPTION
The UTC UT2327L is P-channel enhancement mode
Power MOSFET, designed in serried ranks. with fast
switching speed, low on-resistance, favorable stabilization.
Used in commercial and industrial surface mount
applications and suited for low voltage applications such as
DC/DC converters.
1
2
SOT-23
ꢀ
SYMBOL
2.Drain
*Pb-free plating product number: UT2327L
1.Gate
3.Source
ꢀ ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
SOT-23
Packing
Normal
Lead Free Plating
1
2
3
UT2327-AE3-R
UT2327L-AE3-R
S
G
D
Tape Reel
UT2327L-AE3-R
(1)Packing Type
(2)Package Type
(1) R: Tape Reel
(2) AE3: SOT-23
(3)Lead Plating
(3) L: Lead Free Plating, Blank: Pb/Sn
ꢀ
MARKING
23A
Lead Plating
www.unisonic.com.tw
Copyright © 2007 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-108,A
UT2327
Power MOSFET
ꢀ
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
VDS
RATING
UNITS
Drain-Source Voltage
Gate-Source Voltage
- 20
± 12
V
V
VGS
Ta=25
℃
℃
-2.6
A
Continuous Drain Current (Note 3)
ID
Ta=70
-2.1
A
Pulsed Drain Current (Note 1, 2)
IDM
PD
-10
A
Total Power Dissipation (Ta=25
Junction Temperature
℃)
1.38
W
℃
TJ
+150
-55 ~ +150
℃
Storage Temperature
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ꢀ
THERMAL DATA
PARAMETER
Junction to Ambient (Note 3)
SYMBOL
MIN
TYP
MAX
90
UNIT
/W
θJA
℃
ꢀ
ELECTRICAL CHARACTERISTICS (TJ=25
℃
, unless otherwise specified)
TEST CONDITIONS MIN TYP MAX UNITS
PARAMETER
SYMBOL
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
IDSS
VGS=0V, ID=-250uA
-20
V
TJ=25
℃
℃
V
DS=-20V, VGS=0V
DS=-16V, VGS=0V
-1
uA
uA
nA
Drain-Source Leakage Current
TJ=70
V
-10
Gate-Source Leakage Current
IGSS
VGS=±12V
±100
Reference to 25
℃
, ID=-1mA
V/℃
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ
-0.1
4.4
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=-250uA
VGS=-5V, ID=-2.8A
-0.5
V
130
190
mΩ
mΩ
S
Drain-Source On-State Resistance (Note 2)
VGS=-2.8V, ID=-2.0A
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
VDS=-5V, ID=-2.8A
CISS
COSS
CRSS
295
170
65
pF
pF
pF
V
GS=0V, VDS=-6V, f=1.0MHz
DS=-15V, VGS=-10V,
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note 2)
Turn-ON Rise Time
tD(ON)
tR
tD(OFF)
tF
5.2
9.7
19
ns
ns
V
ID=-1A, RG=6Ω, RD=15Ω
Turn-OFF Delay Time
ns
Turn-OFF Fall Time
29
ns
Total Gate Charge (Note 2)
Gate-Source Charge
QG
5.2
1.36
0.6
10
nC
nC
nC
VDS=-6V, VGS=-5V, ID=-2.8A
QGS
QGD
Gate-Drain Charge
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
TJ=25
℃, IS=-1.6A, VGS=0V
Drain-Source Diode Forward Voltage(Note2)
Maximum Continuous Drain-Source Diode
Forward Current
VSD
-1.2
-1
V
A
IS
VD=VG=0V, VS=-1.2V
Maximum Pulsed Drain-Source Diode
Forward Current (Note 1)
ISM
-10
A
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270
℃/W when mounted on min.
UNISONIC TECHNOLOGIES CO., LTD
2 of 5
QW-R502-108,A
www.unisonic.com.tw
UT2327
Power MOSFET
ꢀ
TYPICAL CHARACTERISTICS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
5
4
5
4
VGS = -5V
VGS = -5V
VGS = -4V
TA = 25℃
TA = 150℃
VGS = -4V
VGS = -3V
VGS = -3V
3
3
2
1
2
1
VGS = -2V
VGS = -2V
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Drain-to-Source Voltage, VDS (V)
Drain-to-Source Voltage, VDS (V)
Fig 3. On-Resistance vs. Gate Voltage
Fig 4. Normalized On-Resistance
800
600
400
200
0
1.8
1.6
1.4
ID = -2.8A
VGS = -5V
ID = -2A
TA =25℃
1.2
1
0.8
0.6
-50
0
2
4
6
8
10
0
50
100
150
Gate-to-Source Voltage, VGS (V)
Junction Temperature, Tj (℃)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
10
1
1.5
1.0
0.5
TJ=150℃
TJ =25℃
0
0
0.1
0.0
-50
0.3
0.5
0.7
0.9
1.1
1.3
0
50
100
150
Source-to-Drain Voltage, VSD (V)
Junction Temperature, TJ (℃)
UNISONIC TECHNOLOGIES CO., LTD
3 of 5
QW-R502-108,A
www.unisonic.com.tw
UT2327
Power MOSFET
ꢀ
TYPICAL CHARACTERISTICS(Cont.)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
f=1.0MHz
5
4
3
2
1
0
1000
100
0
ID = -2.8A
VDS = -6V
CISS
COSS
CRSS
0
2
4
6
1
3
5
7
9
11
13
Total Gate Charge, QG (nC)
Drain-to-Source Voltage,VDS (V)
Fig 10. Effective Transient Thermal
Impedance
Fig 9. Maximum Safe Operating Area
1
0.1
100
10
1ms
1
0.1
PDM
10ms
0.01
t
T
100ms
TA =25°C
Duty factor = t/T
Single Pulse
Peak T J = PDM x θja + Ta
θja = 270 ℃/W
1s
DC
0.01
0.001
0.1
1
10
100
0.0001 0.001 0.01 0.1
1
10
100 1000
Drain-to-Source Voltage,VDS (V)
Pulse Width, t (s)
Fig 12. Gate Charge Waveform
VG
Fig 11. Switching Time Waveform
VDS
90%
QG
-5V
QGD
QGS
10%
VGS
Q
Charge
tD(ON) tR
tF
tD(OFF)
UNISONIC TECHNOLOGIES CO., LTD
4 of 5
QW-R502-108,A
www.unisonic.com.tw
UT2327
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
5 of 5
QW-R502-108,A
www.unisonic.com.tw
相关型号：
©2020 ICPDF网 联系我们和版权申明