UT2955-AA3-R [UTC]
Transistor;
| 型号： | UT2955-AA3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Transistor |
| 文件： | 总4页 (文件大小：201K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT2955
Power MOSFET
SINGLE P-CHANNEL POWER
MOSFET
DESCRIPTION
The UT2955 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch, in PWM
applications, converters and power supplies.
FEATURES
* RDS(ON)<170mΩ @VGS=-10 V, ID=-0.75A
* RDS(ON)<180mΩ @VGS=-10 V, ID=-1.5A
* RDS(ON)<185mΩ @VGS=-10 V, ID=-2.4A
* Low capacitance
* Low gate charge
Lead-free:
UT2955L
* Fast switching capability
Halogen-free: UT2955G
* Avalanche energy specified
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
SOT-223
Packing
Normal
Lead Free Plating
UT2955L-AA3-R
Halogen Free
1
2
3
UT2955-AA3-R
UT2955G-AA3-R
G
D
S
Tape Reel
UT2955L-AA3-R
(1)Packing Type
(1) R: Tape Reel
(2) AA3: SOT-223
(2)Package Type
(3)Lead Plating
(3) G: Halogen Free, L: Lead Free,
Blank: Pb/Sn
www.unisonic.com.tw
Copyright © 2008 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-250.A
UT2955
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
-60
±20
V
Continuous Drain Current
Pulsed Drain Current
-1.7
A
IDM
-10.4
225
A
Single Pulsed Avalanche Energy (Note 3)
Power Dissipation
EAS
mJ
W
℃
℃
PD
1.0
Junction Temperature
TJ
+175
-55 ~ +175
Storage Temperature
TSTG
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. VDD=15V, VG=10V, IPK=6.7A, L=10mH, RG=25Ω
THERMAL DATA
PARAMETER
SYMBOL
θJA
MIN
TYP
MAX
14
UNIT
℃/W
℃/W
Junction-to-Ambient
Junction-to-Case
θJC
150
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS (Note)
Gate Threshold Voltage
BVDSS
IDSS
VGS=0V, ID=-250µA
VDS=-60V, VGS=0V
VDS=0V, VGS=±20V
-60
V
-1.0
µA
IGSS
±100 nA
VGS(TH)
RDS(ON)
VDS=VGS, ID=-1.0mA
VGS=-10V, ID=-0.75A
VGS=-10V, ID=-1.5A
VGS=-10V, ID=-2.4A
-2.0
-4.0
170
180
185
V
145
150
154
Static Drain-Source On-Resistance
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
492
165
50
pF
pF
pF
VDS=-25V, VGS=0V, f=1MHz
VDS=30V, VGS=10 V, ID=1.5A
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total
Threshold
14.3
1.2
2.3
5.2
11
Total Gate Charge
QG
nC
Gate Source Charge
Gate Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
QGS
QGD
tD(ON)
tR
nC
nC
ns
ns
ns
ns
VGS=10V, VDD=25V, ID=1.5A,
RG=9.1ꢀ, RL=25ꢀ
7.6
65
tD(OFF)
tF
38
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
tRR
IS=1.5A, VGS=0V
VGS=0V, dIS /dt=100A/µs
IS=1.5A
-1.10 -1.30
36
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nC
QRR
0.139
Note: Pulse Test: pulse width ≤ 300 s, duty cycle ≤ 2%.
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
www.unisonic.com.tw
QW-R502-250.A
UT2955
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs.
Drain-Source Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
450
400
350
300
250
200
150
100
50
1200
1000
800
600
400
200
0
0
2
3
4
0
1
0
20
40
60
80
Gate Threshold Voltage, VTH (mV)
Drain-Source Breakdown Voltage, BVDSS(V)
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
QW-R502-250.A
www.unisonic.com.tw
UT2955
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R502-250.A
www.unisonic.com.tw
相关型号：
©2020 ICPDF网 联系我们和版权申明