UT2955L-TN3-R [UTC]
SINGLE P-CHANNEL POWER MOSFET;
| 型号： | UT2955L-TN3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | SINGLE P-CHANNEL POWER MOSFET |
| 文件： | 总4页 (文件大小：234K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT2955
Power MOSFET
SINGLE P-CHANNEL POWER
MOSFET
DESCRIPTION
The UT2955 uses advanced trench technology to provide excellent
RDS(ON), low gate charge and operation with low gate voltages. This
device is suitable for use as a load switch, in PWM applications,
converters and power supplies.
FEATURES
* RDS(ON) < 170mΩ @ VGS=-10 V, ID=-0.75A
* RDS(ON) < 180mΩ @ VGS=-10 V, ID=-1.5A
* RDS(ON) < 185mΩ @ VGS=-10 V, ID=-2.4A
* Low Capacitance
* Low Gate Charge
* Fast Switching Capability
* Avalanche Energy Specified
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
D
D
3
S
S
-
UT2955G-AA3-R
UT2955G-TN3-R
SOT-223
TO-252
G
G
Tape Reel
Tape Reel
UT2955L-TN3-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
MARKING
SOT-223
TO-252
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R502-250.C
UT2955
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
-60
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±20
V
Continuous Drain Current
Pulsed Drain Current
-1.7
A
IDM
-10.4
225
A
Single Pulsed Avalanche Energy (Note 3)
EAS
mJ
W
SOT-223
TO-252
1.0
Power Dissipation
PD
1.13
W
Junction Temperature
Storage Temperature
TJ
+175
-55 ~ +175
°C
°C
TSTG
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. VDD=15V, VG=10V, IPK=6.7A, L=10mH, RG=25Ω
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
150
UNIT
°C/W
°C/W
°C/W
°C/W
SOT-223
TO-252
SOT-223
TO-252
Junction to Ambient
Junction to Case
θJA
110
14
θJC
4.53
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS (Note)
Gate Threshold Voltage
BVDSS
IDSS
VGS=0V, ID=-250µA
VDS=-60V, VGS=0V
VDS=0V, VGS=±20V
-60
V
-1.0
µA
IGSS
±100 nA
VGS(TH)
RDS(ON)
VDS=VGS, ID=-1.0mA
VGS=-10V, ID=-0.75A
VGS=-10V, ID=-1.5A
VGS=-10V, ID=-2.4A
-2.0
-4.0
170
180
185
V
145
150
154
mΩ
mΩ
mΩ
Static Drain-Source On-Resistance
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
492
165
50
pF
pF
pF
Output Capacitance
VDS=-25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total
Threshold
14.3
1.2
2.3
5.2
11
nC
nC
nC
nC
ns
Total Gate Charge
QG
VDS=30V, VGS=10 V, ID=1.5A
Gate Source Charge
Gate Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
QGS
QGD
tD(ON)
tR
7.6
65
ns
VGS=10V, VDD=25V, ID=1.5A,
RG=9.1ꢀ, RL=25ꢀ
tD(OFF)
tF
ns
38
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
tRR
IS=1.5A, VGS=0V
VGS=0V, dIS /dt=100A/µs
IS=1.5A
-1.10 -1.30
36
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nC
QRR
0.139
Note: Pulse Test: pulse width ≤ 300 s, duty cycle ≤ 2%.
UNISONIC TECHNOLOGIES CO., LTD
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UT2955
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs.
Drain-Source Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
450
400
350
300
250
200
150
100
50
1200
1000
800
600
400
200
0
0
2
3
4
0
1
0
20
40
60
80
Gate Threshold Voltage, VTH (mV)
Drain-Source Breakdown Voltage, BVDSS(V)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-250.C
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UT2955
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-250.C
www.unisonic.com.tw
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