UT3055-TN3-R [UTC]
Power Field-Effect Transistor, 12A I(D), 25V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN;型号: | UT3055-TN3-R |
厂家: | Unisonic Technologies |
描述: | Power Field-Effect Transistor, 12A I(D), 25V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN 晶体管 |
文件: | 总3页 (文件大小:94K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT3055
Power MOSFET
N-CHANNEL
ENHANCEMENT MODE
DESCRIPTION
The UTC UT3055 is N-Channel logic level enhancement
mode field effect transistor.
SYMBOL
2.Drain
*Pb-free plating product number: UT3055L
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
Lead Free Plating
1
2
D
D
3
S
S
UT3055-TN3-R
UT3055-TN3-T
UT3055L-TN3-R
UT3055L-TN3-T
TO-252
TO-252
G
G
Tape Reel
Tube
www.unisonic.com.tw
1 of 5
Copyright © 2008 Unisonic Technologies Co., Ltd
QW-R502-158.A
UT3055
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
25
±16
V
Continuous Drain Current
Power Dissipation
12
A
PD
50
W
℃
Junction Temperature
Storage Temperature
TJ
+150
-55 ~ +150
℃
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
BVDSS
IDSS
VGS=0V, ID=250uA
VDS =16 V, VGS =0 V
VDS =0 V, VGS = ±12V
25
V
10
µA
IGSS
±100 nA
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250uA
VGS=10V, ID=5A
VGS=4.5V, ID=5A
1.1
V
70
95
mΩ
mΩ
Drain-Source On-State Resistance (Note 2)
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
240
97
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Total Gate Charge
68
QG
3.2
0.8
nC
nC
VGS=4.5V
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note2)
Maximum Continuous Drain-Source Diode
Forward Current
VSD
IF=IS, VGS=0V
1.0
V
A
IS
5
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R502-158.A
www.unisonic.com.tw
UT3055
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R502-158.A
www.unisonic.com.tw
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