UT4800L-S08-T [UTC]
Power Field-Effect Transistor, 30V, 0.0185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8;
| 型号： | UT4800L-S08-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Field-Effect Transistor, 30V, 0.0185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：189K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT4800
Power MOSFET
N-CHANNEL
ENHANCEMENT MODE
DESCRIPTION
The UT4800 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.
SYMBOL
Drain
*Pb-free plating product number: UT4800L
Gate
Source
ORDERING INFORMATION
Ordering Number
Package
Packing
Normal
Lead Free Plating
UT4800-S08-R
UT4800-S08-T
UT4800L-S08-R
UT4800L-S08-T
SOP-8
SOP-8
Tape Reel
Tube
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Copyright © 2008 Unisonic Technologies Co., Ltd
QW-R502-174.A
UT4800
Power MOSFET
PIN CONFIGURATION
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UT4800
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
30
±25
V
Continuous Drain Current (Note 1)
Pulsed Drain Current (Note 1)
Power Dissipation
6.5
A
IDM
40
A
PD
1.3
W
°C
°C
Junction Temperature
TJ
+150
-55 ~ +150
Storage Temperature
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
70
MAX
95
UNIT
℃/W
Junction-to-Ambient
θJA
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate-Threshold Voltage
BVDSS VGS =0 V, ID =250 µA
30
V
IDSS
IGSS
VDS =24 V, VGS =0 V
VDS =0 V, VGS = ±20V
1
µA
nA
±100
VGS(TH) VDS =VGS, ID =250 µA
0.8
1.8
V
VGS =10 V, ID =9A
RDS(ON)
15.5 18.5
mΩ
mΩ
Static Drain-Source On-Resistance
V
GS =4.5 V, ID =7A
23
30
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
Total Gate Charge
tD(ON)
tR
tD(OFF)
tF
7
15
20
50
25
13
ns
ns
VGS=10V,VDS=15V, RL=15Ω,
GEN=6Ω
12
32
14
8.7
1.5
3.5
R
ns
ns
QG
nC
nC
nC
VDS =15V, VGS =5.0V,
Gate-Source Charge
Gate-Drain Charge
QGS
QGD
ID =9A
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage
VSD
IS
VGS=0V, IS=2.3A
0.75
30
1.2
2.3
60
V
A
Maximum Body-Diode Continuous Current
Body Diode Reverse Recovery Time
tRR
IF=2.3A, dI/dt=100A/µs
ns
Note:1. Repetitive Rating : Pulse width limited by TJ
2. Pulse Test: Pulse width ≤ 300µs, Duty cycle 2% max.
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UT4800
Power MOSFET
TYPICAL CHARACTERISTICS
On-Resistance vs. Drain Current and
Gate Voltage
On-Resistance vs. Junction Temperature
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.040
0.032
0.024
0.016
0.008
0.000
VGS=10V
ID=9A
VGS=4.5V
VGS=10V
100
125 150
0
5
10
15
20
25
30
-50 -25
0
25 50 75
Junction Temperature (℃)
Drain Current,ID (A)
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UT4800
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Gate-Charge Characteristics
VDS=15V
ID=9A
Capacitance Characteristics
6
5
4
3
2
1200
1000
CISS
800
600
400
200
0
COSS
1
0
CRSS
8
0
2
4
6
8
10
0
4
12
16
20
Gate Charge,QG (nC)
Drain to Source Voltage,VDS (V)
Safe Operating Area,Junction-to-Foot
100
RDS(ON)
Limited
10
1
1ms
10ms
100ms
1s
10s
DC
0.1
TC=25℃
Single Pulse
0.01
0.1
1
10
100
Drain to Source Voltage, VDS (V)
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UT4800
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Normalized Thermal Transient Impedance,Junction-to-Ambient
2
1
D=0.5
0.2
0.1
PDM
t1
0.1
t2
0.05
1.Duty Cycle,D=t1/t2
2.Per Unit Base=RthJA=70℃/W
3.TJM-TA=PDMZthJA(t)
0.02
Single Pulse
10-2
4.Surface Mounted
0.01
10-4
10-3
10-1
Square Wave Pulse Duration (sec)
1
100
10
600
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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