UT4810DG-S08-T [UTC]
N-CHANNEL 30-V (D-S) MOSFET WITH SCHOTTKY DIODE; N通道30 -V （ D- S）的MOSFET与肖特基二极管
| 型号： | UT4810DG-S08-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL 30-V (D-S) MOSFET WITH SCHOTTKY DIODE |
| 文件： | 总5页 (文件大小：196K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT4810D
Power MOSFET
N-CHANNEL 30-V (D-S)
MOSFET WITH SCHOTTKY
DIODE
DESCRIPTION
SOP-8
As trench FET Power MOSFETS, N-channel MOSFET with
schottky diode, the UTC UT4810D shows fast switching and low
gate charge features. And it can be used in such applications:
DC-DC logic level, low voltage and battery powered.
FEATURES
* RDS(ON) < 13.5mΩ @VGS = 10 V
* RDS(ON) < 20mΩ @VGS = 4.5 V
* Low capacitance
Lead-free:
Halogen-free: UT4810DG
UT4810DL
* Low gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Package
Packing
Normal
Lead Free
Halogen Free
UT4810D-S08-R
UT4810D-S08-T
UT4810DL-S08-R
UT4810DL-S08-T
UT4810DG-S08-R
UT4810DG-S08-T
SOP-8
SOP-8
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2008 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-252.A
UT4810D
Power MOSFET
PIN CONFIGURATION
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UT4810D
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
RATINGS
30
UNIT
V
MOSFET
Schottky
MOSFET
MOSFET
MOSFET
MOSFET
Schottky
Schottky
Drain-Source Voltage
30
Gate-Source Voltage
VGSS
ID
IDM
IS
±20
7.5
V
A
Continuous Drain Current (TJ=150°C)
Pulsed Drain Current
50
A
Continuous Source Current
Average Forward Current
Pulsed Forward Current
1.25
2.4
A
IF
A
IFM
IAS
EAS
40
A
Avalanche Current
25
A
L=0.1mH
Single-Pulse Avalanche Energy
78
mJ
MOSFET
Schottky
1.38
1.31
+150
Power Dissipation
PD
W
Junction Temperature
Storage Temperature
TJ
°C
TSTG
-55 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
73
MAX
90
UNIT
°C/W
MOSFET
Schottky
Junction-to-Ambient
θJA
77
95
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
(MOSFET+ Schottky)
IDSS
IGSS
VDS=30V, VGS=0V
0.007 0.100 mA
Gate-Body Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
On State Drain Current
VDS=0V, VGS=±20V
±100
3
nA
VGS(TH)
ID(ON)
VDS=VGS, ID=250µA
VDS≥5V, VGS=10V
VGS=10V, ID=10A
1
V
A
20
10.5 13.5
Static Drain-Source On-Resistance
RDS(ON)
mΩ
VGS=4.5V, ID=5A
16
20
DYNAMIC PARAMETERS
Gate Resistance
RG
0.2
0.55
0.9
Ω
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
Total Gate Charge
tD(ON)
tR
tD(OFF)
tF
17
13
30
20
90
25
22
ns
ns
VDD=15V, RL=15ꢀ, RG=6 ꢀ,
ID≈1 A, VGEN=10V
45
ns
15
ns
QG
14.5
6.3
4.7
nC
nC
nC
VDS=15V, VGS=5V, ID=10A
Gate Source Charge
Gate Drain Charge
QGS
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
tRR
IS=3.0 A, VGS =0 V
0.485 0.53
36 70
V
Body Diode Reverse Recovery Time
IF=3.0 A, dI/dt=100A/μs
ns
UNISONIC TECHNOLOGIES CO., LTD
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UT4810D
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Source to Drain Voltage
Switching Time Waveforms
3000
2500
VDS
90%
2000
1500
10%
1000
VGS
tD(ON)
tD(OFF)
500
0
tTHL
tTLH
200
400
600
0
800
Source to Drain Voltage,VSD (mV)
Drain-Source On-State Resistance Characteristics
16
14
VGS=4.5V
12
VGS=10V
10
8
6
4
2
0
0
200
50
100
150
Drain to Source Voltage, VDS (mV)
UNISONIC TECHNOLOGIES CO., LTD
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UT4810D
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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