UT4812ZG-P08-R [UTC]

Power Field-Effect Transistor;
UT4812ZG-P08-R
型号: UT4812ZG-P08-R
厂家: Unisonic Technologies    Unisonic Technologies
描述:

Power Field-Effect Transistor

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中文:  中文翻译
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UNISONIC TECHNOLOGIES CO., LTD  
UT4812Z  
Power MOSFET  
30V, 6.9A DUAL N-CHANNEL  
ENHANCEMENT MODE  
DESCRIPTION  
SOP-8  
The UTC UT4812Z can provide excellent RDS(ON) and low  
gate charge by using advanced trench technology. The UTC  
UT4812Z is suitable for using as a load switch or in PWM  
applications.  
FEATURES  
TSSOP-8  
* Low RDS(ON)  
* Reliable and Rugged  
SYMBOL  
(8)  
D2  
(1)  
D1  
(5) (6)  
D2  
(7) (8)  
D1  
(4)  
G1  
(5)  
G2  
(2)  
G1  
(4)  
G2  
(6) (7)  
S2  
(3)  
S2  
(2) (3)  
S1  
(1)  
S1  
TSSOP-8  
SOP-8  
ORDERING INFORMATION  
Pin Assignment  
Ordering Number  
Package  
Packing  
1
S
D
2
G
S
3
S
S
4
5
D
G
6
D
S
7
8
D
D
UT4812ZG-S08-R  
UT4812ZG-P08-R  
SOP-8  
G
G
D
S
Tape Reel  
Tape Reel  
TSSOP-8  
Note: Pin Assignment: G: Gate  
D: Drain  
S: Source  
www.unisonic.com.tw  
1 of 6  
Copyright © 2016 Unisonic Technologies Co., Ltd  
QW-R502-350.D  
UT4812Z  
Power MOSFET  
MARKING  
SOP-8  
TSSOP-8  
PIN CONFIGURATION  
Drain 1  
Drain 1  
Drain 2  
8
1
1
Source 1  
Gate 1  
Drain 1  
Source 1  
Source 1  
8
7
Source 2  
Source 2  
Gate 2  
7
2
2
Source 2  
Drain 2  
Drain 2  
3
4
3
4
6
5
6
5
Gate 2  
Gate 1  
SOP-8  
TSSOP-8  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R502-350.D  
www.unisonic.com.tw  
UT4812Z  
Power MOSFET  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VDSS  
VGSS  
ID  
RATINGS  
UNIT  
V
Drain-Source Voltage  
30  
Gate-Source Voltage  
±20  
V
Continuous Drain Current (Note 2)  
Pulsed Drain Current (Note 3)  
6.9  
A
IDM  
30  
2
A
SOP-8  
TSSOP-8  
W
W
°C  
°C  
Power Dissipation  
PD  
1.5  
Junction Temperature  
Storage Temperature  
TJ  
+150  
TSTG  
-55 ~ + 150  
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. Surface Mounted on 1in 2 pad area, t 10sec.  
3. Repetitive Rating: Pulse width limited by maximum junction temperature.  
THERMAL DATA  
PARAMETER  
Junction to Ambient  
SYMBOL  
RATINGS  
110  
UNIT  
°C/W  
θJA  
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
Gate-Source Leakage Current  
ON CHARACTERISTICS  
BVDSS  
IDSS  
VGS=0 V, ID=250µA  
30  
V
VDS=30V, VGS=0 V  
VDS=0 V, VGS= ±20V  
1
5
µA  
µA  
IGSS  
Gate Threshold Voltage  
VGS(TH)  
RDS(ON)  
VDS=VGS, ID=250 µA  
VGS=10V, ID=6.9A  
VGS=4.5V, ID=5.0A  
1
3
V
28  
42  
mΩ  
mΩ  
Drain-Source On-State Resistance (Note)  
DYNAMIC PARAMETERS  
Input Capacitance  
CISS  
COSS  
CRSS  
680  
102  
77  
pF  
pF  
pF  
VDS=15V, VGS=0V, f=1MHz  
VDS=15V, VGS=10V, ID=6.9A  
Output Capacitance  
Reverse Transfer Capacitance  
SWITCHING PARAMETERS  
Total Gate Charge  
QG  
QGS  
QGD  
tD(ON)  
tR  
13.84  
1.82  
3.2  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
Gate Source Charge  
Gate Drain Charge  
Turn-ON Delay Time  
Turn-ON Rise Time  
4.6  
VGS=10V, VDS=15V, RL=2.2,  
RG =3ꢀ  
4.1  
Turn-OFF Delay Time  
Turn-OFF Fall-Time  
tD(OFF)  
tF  
20.6  
5.2  
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS  
Maximum Continuous Drain-Source  
Diode Forward Current  
IS  
3
1
A
V
Drain-Source Diode Forward Voltage  
(Note)  
VSD  
IS=1.0A  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
Note: Pulse width 300μs, duty cycle2%.  
trr  
16.5  
7.8  
ns  
IF=6.9A, dIF/dt=100A/μs  
Qrr  
nC  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R502-350.D  
www.unisonic.com.tw  
UT4812Z  
Power MOSFET  
TYPICAL CHARACTERISTICS  
Drain Current vs. Drain-Source  
Breakdown Voltage  
Drain Current vs. Gate Threshold Voltage  
300  
250  
200  
150  
100  
50  
300  
250  
200  
150  
100  
50  
0
0
0
5
10 15 20 25 30 35 40  
0
0.2  
0.4 0.6 0.8 1.0 1.2 1.4 1.6  
Gate Threshold Voltage, VTH (V)  
Drain-Source Breakdown Voltage, BVDSS(V)  
Drain-Source On-State Resistance  
Characteristics  
Drain Current vs. Source to Drain Voltage  
1.2  
8
7
1.0  
VGS=10V  
ID=6.9A  
6
5
0.8  
0.6  
0.4  
0.2  
0
4
3
VGS=4.5V  
ID=5A  
2
1
0
0
50  
100  
150  
200  
0.2  
0.4  
0.6  
0.8 1.0 1.2  
0
Drain to Source Voltage, VDS (mV)  
Source to Drain Voltage, VSD (V)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R502-350.D  
www.unisonic.com.tw  

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