UT4812ZG-P08-R [UTC]
Power Field-Effect Transistor;型号: | UT4812ZG-P08-R |
厂家: | Unisonic Technologies |
描述: | Power Field-Effect Transistor |
文件: | 总4页 (文件大小:182K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT4812Z
Power MOSFET
30V, 6.9A DUAL N-CHANNEL
ENHANCEMENT MODE
DESCRIPTION
SOP-8
The UTC UT4812Z can provide excellent RDS(ON) and low
gate charge by using advanced trench technology. The UTC
UT4812Z is suitable for using as a load switch or in PWM
applications.
FEATURES
TSSOP-8
* Low RDS(ON)
* Reliable and Rugged
SYMBOL
(8)
D2
(1)
D1
(5) (6)
D2
(7) (8)
D1
(4)
G1
(5)
G2
(2)
G1
(4)
G2
(6) (7)
S2
(3)
S2
(2) (3)
S1
(1)
S1
TSSOP-8
SOP-8
ORDERING INFORMATION
Pin Assignment
Ordering Number
Package
Packing
1
S
D
2
G
S
3
S
S
4
5
D
G
6
D
S
7
8
D
D
UT4812ZG-S08-R
UT4812ZG-P08-R
SOP-8
G
G
D
S
Tape Reel
Tape Reel
TSSOP-8
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2016 Unisonic Technologies Co., Ltd
QW-R502-350.D
UT4812Z
Power MOSFET
MARKING
SOP-8
TSSOP-8
PIN CONFIGURATION
Drain 1
Drain 1
Drain 2
8
1
1
Source 1
Gate 1
Drain 1
Source 1
Source 1
8
7
Source 2
Source 2
Gate 2
7
2
2
Source 2
Drain 2
Drain 2
3
4
3
4
6
5
6
5
Gate 2
Gate 1
SOP-8
TSSOP-8
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QW-R502-350.D
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UT4812Z
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
30
Gate-Source Voltage
±20
V
Continuous Drain Current (Note 2)
Pulsed Drain Current (Note 3)
6.9
A
IDM
30
2
A
SOP-8
TSSOP-8
W
W
°C
°C
Power Dissipation
PD
1.5
Junction Temperature
Storage Temperature
TJ
+150
TSTG
-55 ~ + 150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Surface Mounted on 1in 2 pad area, t ≤10sec.
3. Repetitive Rating: Pulse width limited by maximum junction temperature.
THERMAL DATA
PARAMETER
Junction to Ambient
SYMBOL
RATINGS
110
UNIT
°C/W
θJA
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
BVDSS
IDSS
VGS=0 V, ID=250µA
30
V
VDS=30V, VGS=0 V
VDS=0 V, VGS= ±20V
1
5
µA
µA
IGSS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250 µA
VGS=10V, ID=6.9A
VGS=4.5V, ID=5.0A
1
3
V
28
42
mΩ
mΩ
Drain-Source On-State Resistance (Note)
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
680
102
77
pF
pF
pF
VDS=15V, VGS=0V, f=1MHz
VDS=15V, VGS=10V, ID=6.9A
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
13.84
1.82
3.2
nC
nC
nC
ns
ns
ns
ns
Gate Source Charge
Gate Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
4.6
VGS=10V, VDS=15V, RL=2.2ꢀ,
RG =3ꢀ
4.1
Turn-OFF Delay Time
Turn-OFF Fall-Time
tD(OFF)
tF
20.6
5.2
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source
Diode Forward Current
IS
3
1
A
V
Drain-Source Diode Forward Voltage
(Note)
VSD
IS=1.0A
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Note: Pulse width ≤300μs, duty cycle≤2%.
trr
16.5
7.8
ns
IF=6.9A, dIF/dt=100A/μs
Qrr
nC
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-350.D
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UT4812Z
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
250
200
150
100
50
300
250
200
150
100
50
0
0
0
5
10 15 20 25 30 35 40
0
0.2
0.4 0.6 0.8 1.0 1.2 1.4 1.6
Gate Threshold Voltage, VTH (V)
Drain-Source Breakdown Voltage, BVDSS(V)
Drain-Source On-State Resistance
Characteristics
Drain Current vs. Source to Drain Voltage
1.2
8
7
1.0
VGS=10V
ID=6.9A
6
5
0.8
0.6
0.4
0.2
0
4
3
VGS=4.5V
ID=5A
2
1
0
0
50
100
150
200
0.2
0.4
0.6
0.8 1.0 1.2
0
Drain to Source Voltage, VDS (mV)
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-350.D
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