UT50N03G-TN3-T [UTC]
45A, 25V N-CHANNEL POWER MOSFET;
| 型号： | UT50N03G-TN3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 45A, 25V N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：334K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT50N03
Power MOSFET
45A, 25V N-CHANNEL
POWER MOSFET
1
FEATURES
TO-252
TO-251
* RDS(ON) = 14mΩ @VGS = 10 V
* Low capacitance
* Optimized gate charge
* Fast switching capability
* Avalanche energy specified
1
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Package
Packing
Halogen Free
1
2
D
D
D
3
S
S
S
UT50N03L-TM3-T
UT50N03L-TN3-R
UT50N03L-TN3-T
UT50N03G-TM3-T
UT50N03G-TN3-R
UT50N03G-TN3-T
TO-251
TO-252
TO-252
G
G
G
Tube
Tape Reel
Tube
Note: Pin Assignment: G: Gate D: Drain S: Source
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Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R502-168.B
UT50N03
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
25
±20
V
Continuous Drain Current
Pulsed Drain Current (Note 3)
Single Pulsed Avalanche Energy (Note 4)
Power Dissipation
45
A
IDM
180
A
EAS
20
mJ
W
PD
50
Junction Temperature
TJ
+150
-55 ~ +150
°C
°C
Storage Temperature
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L = 19.5mH, IAS = 6.3A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. Surface-mounted on FR4 board using 1 sq in pad, 1 oz Cu.
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
71.4
UNIT
℃/W
℃/W
Junction to Ambient (Note 3)
Junction to Case
θJC
3.0
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
BVDSS VGS =0V, ID =250 µA
25
V
IDSS
IGSS
VDS=20V, VGS =0V
1.5
µA
nA
VDS =0V, VGS = ±20V
±100
Gate-Threshold Voltage
VGS(TH) VDS =VGS, ID =250 µA
1.0
1.7
12
2.0
V
ID = 30 A
VGS = 11.5V
VGS = 10 V
VGS = 4.5V
ID = 15 A
ID = 30 A
ID = 30 A
ID = 15 A
11.7
12.5
21
Drain-Source On-State Resistance
RDS(ON)
mΩ
14
23
19
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
610 750
300
V
DS=12V, VGS =0V, f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-ON Rise Time
125
tD(ON)
tR
tD(OFF)
tF
tD(ON)
tR
tD(OFF)
tF
8.2
9.6
11.2
6.8
5.0
84
VGS = 4.5 V, VDS =15 V,
ID = 30 A, RG = 3.0Ω
ns
ns
Turn-OFF Delay Time
Turn-OFF Fall-Time
Turn-ON Delay Time
Turn-ON Rise Time
VGS = 11.5 V, VDS =15 V,
ID = 30 A, RG = 3.0Ω
Turn-OFF Delay Time
Turn-OFF Fall-Time
Total Gate Charge
15
4.0
QG
6.0
1.9
3.7
15
10
VDS =15V,VGS =4.5V,
nC
nC
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge
QGS
QGD
QG
ID =30 A
VDS =15V,VGS =11.5V,
Gate-to-Source Charge
Gate-to-Drain Charge
QGS
QGD
1.9
3.9
ID =30 A
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
IS=30 A, VGS =0V
0.85 1.1
45
V
A
IS
Reverse Recovery Time
trr
IS = 30 A, VGS = 0 V,
dI /dt = 100 A/μs
24
14
ns
Reverse Recovery Charge
QRR
nC
Note: 1. Pulse width limited by TJ(MAX)
2. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%.
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UT50N03
Power MOSFET
TYPICAL CHARACTERISTICS
On-Resistance versus Gate-to-
Source Voltage
On-Resistance versus Drain Current
and Gate Voltage
0.065
0.030
0.025
TJ=25℃
ID=15A
TJ=25℃
0.055
0.045
VGS=4.5V
0.020
0.035
0.025
0.015
0.010
VGS=10V
0.015
0.005
0.005
0
2
3
10
50
4
5
6
7
8
9
10
20
30
40
Gate-to-Source Voltage,VGS (V)
Drain Current,ID (A)
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UT50N03
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
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Power MOSFET
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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
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presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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相关型号：
UT50N03L-TN3-T
Power Field-Effect Transistor, 45A I(D), 25V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3
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