UT50N04G-TN3-R [UTC]
Power Field-Effect Transistor,;
| 型号： | UT50N04G-TN3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总6页 (文件大小：328K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT50N04
Power MOSFET
50A, 40V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC UT50N04 is a N-channel enhancement MOSFET using
UTC’s advanced technology to provide the customers with perfect
DS(ON) and high switching speed.
R
FEATURES
* RDS(ON) ≤ 11mΩ @ VGS=4.5V, ID=20A
DS(ON) ≤ 7.0mΩ @ VGS=10V, ID=25A
* High Switching Speed
R
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Package
Packing
Halogen Free
1
2
D
D
D
D
3
S
S
S
S
UT50N04L-TA3-T
UT50N04L-TN3-R
UT50N04G-TA3-T
UT50N04G-TN3-R
UT50N04G-TQ2-T
UT50N04G-TQ2-R
TO-220
TO-252
TO-263
TO-263
G
G
G
G
Tube
Tape Reel
Tube
UT50N04L-TQ2-T
UT50N04L-TQ2-R
Tape Reel
Note: Pin Assignment: G: Gate
D: Drain
S: Source
MARKING
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Copyright © 2018 Unisonic Technologies Co., Ltd
QW-R502-671.D
UT50N04
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
40
±20
V
Continuous (VGS=10V)
Pulsed (Note 2)
50
A
Drain Current
IDM
200
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
142
mJ
V/ns
W
Peak Diode Recovery dv/dt (Note 4)
dv/dt
7
TO-220/TO-263
TO-252
166
Power Dissipation
PD
50
W
Junction Temperature
Storage Temperature
TJ
+150
-55 ~ +175
°C
°C
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=0.1mH, IAS=53.2A, VDD=25V, RG=25Ω, Starting TJ=25°С
4. ISD ≤ 30A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
TO-220/TO-263
SYMBOL
RATINGS
62.5
UNIT
°C/W
°C/W
°C/W
°C/W
Junction to Ambient
θJA
TO-252
110
TO-220/TO-263
TO-252
0.75
Junction to Case
θJC
2.5
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UT50N04
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS=0V, ID=250µA
40
V
VDS=40V, VGS=0V
VGS=+20V, VDS=0V
20
µA
Gate- Source
Forward
Reverse
+200 nA
-200 nA
IGSS
Leakage Current
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
0.8
2.3
V
VGS=4.5V, ID=20A (Note 2)
GS=10V, ID=25A
11 mꢀ
7.0 mꢀ
Static Drain-Source On-State Resistance
RDS(ON)
V
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
4500
800
pF
pF
pF
VGS=0V, VDS=20V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
350
QG
QGS
QGD
tD(ON)
tR
82
24
nC
nC
nC
ns
ns
ns
ns
VDS=32V, VGS=10V, ID=50A
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
IG=1mA (Note 2)
18
40
VDD=20V, ID=50A, RG=25ꢀ,
50
VGS=10V (Note 2)
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
204
120
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
IS
50
A
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
200
1.3
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VSD
trr
IS=50A,VGS=0V
V
53
80
ns
nC
IF=30A,VGS=0V, di/dt=100A/µs
Qrr
Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating ambient temperature.
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UT50N04
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
-
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width
D=
VGS
Gate Pulse Period
10V
(Driver)
I
FM, Body Diode Forward Current
ISD
di/dt
(DUT)
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
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UT50N04
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VGS
Same Type
as DUT
QG
VDS
QGS
QGD
VGS
DUT
Charge
Gate Charge Waveforms
Gate Charge Test Circuit
1
2
BVDSS
BVDSS-VDD
VDS
2
EAS
=
LIAS
BVDSS
RG
ID
IAS
L
ID(t)
DUT
tP
VDD
VDD
V
DS(t)
Time
tP
Unclamped Inductive Switching Waveforms
Unclamped Inductive Switching Test Circuit
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UT50N04
Power MOSFET
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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