UT60N06L-TM3-T [UTC]

Power Field-Effect Transistor,;


型号：	UT60N06L-TM3-T
厂家：	Unisonic Technologies
描述：	Power Field-Effect Transistor,
文件：	总7页 (文件大小：391K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

UT60N06

Power MOSFET

60A, 60V N-CHANNEL

POWER MOSFET



DESCRIPTION

TO-251

The UTC UT60N06 is a N-channel enhancement MOSFET using

UTC’s advanced technology to provide the customers with perfect

R_DS(ON)and high switching speed.

The UTC UT60N06 is suitable for all commercial-industrial

applications at power dissipation levels to approximately 50 watts,

etc.



FEATURES

SOP-8

* R_DS(ON)≤ 11 mΩ @ V_GS=10V, I_D=30A

R_DS(ON)≤ 14 mΩ @ V_GS=4.5V, I_D=30A

* High Switching Speed



SYMBOL

Drain

Gate

Source

 ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

Halogen Free

UT60N06L-TM3-T

UT60N06G-TM3-T

UT60N06G-S08-R

G: Gate D: Drain

TO-251

SOP-8

Tube

UT60N06L-S08-R

D Tape Reel

Note: Pin Assignment: Source

UT60N06G-TM3-T

(1)Packing Type

(2)Package Type

(1) T: Tube, R: Tape Reel

(2) TM3: TO-251, S08: SOP-8

(3) G: Halogen Free and Lead Free, L: Lead Free

(3)Green Package



MARKING

TO-251

SOP-8

Date Code

UTC

UT60N06

UTC

UT60N06

K: Lead Free

G: Halogen Free

Date Code

L: Lead Free

G: Halogen Free

Lot Code

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UT60N06

Power MOSFET



ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_DSS

V_GSS

I_D

RATINGS

UNIT

Drain-Source Voltage

Gate-Source Voltage

±20

Continuous (V_GS=10V)

Pulsed (Note 2)

TO-251

Drain Current

I_DM

120

°C

Power Dissipation

P_D

SOP-8

5.4

Junction Temperature

Storage Temperature

T_J

+150

-55 ~ +150

T_STG

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

110

UNIT

°C/W

TO-251

SOP-8

TO-251

SOP-8

Junction to Ambient

Junction to Case

θ_JA

62.5

2.6 (Note)

23.1 (Note)

θ_JC

Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.



ELECTRICAL CHARACTERISTICS (T_J=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

V_GS=0V, I_D=250µA

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

BV_DSS

I_DSS

V_DS=60V, V_GS=0V

V_GS=+20V, V_DS=0V

V_GS=-20V, V_DS=0V

µA

Forward

Reverse

+100 nA

-100 nA

Gate- Source Leakage

Current

I_GSS

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)V_DS=V_GS, I_D=250µA

1.0

3.0

V_GS=10V, I_D=30A

R_DS(ON)

11 mΩ

14 mΩ

Static Drain-Source On-State Resistance

V_GS=4.5V, I_D=30A

DYNAMIC CHARACTERISTICS

Input Capacitance

C_ISS

3500

410

Output Capacitance

C_OSS

C_RSS

V_DS=25V, V_GS=0V, f=1MHz

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Total Gate Charge (Note 1)

Gate-Source Charge

340

Q_G

Q_GS

Q_GD

t_D(ON)

t_R

V_DS=48V, V_GS=10V, I_D=60A

I_G=1mA (Note 1, 2)

Gate-Drain Charge

Turn-On Delay Time (Note 1)

Turn-On Rise Time

V_DD=30V, V_GS=10V, I_D=60A,

R_G=3Ω (Note 1, 2)

Turn-Off Delay Time

t_D(OFF)

t_F

Turn-Off Fall Time

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Continuous Drain-Source Diode

Forward Current

I_S

Maximum Pulsed Drain-Source Diode

Forward Current

I_SM

120

1.4

Drain-Source Diode Forward Voltage

V_SD

I_S=60A,V_GS=0V

Notes: 1. Pulse Test : Pulse width ≤ 600μs, Duty cycle ≤ 2%.

2. Essentially independent of operating ambient temperature.

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UT60N06

Power MOSFET



TEST CIRCUITS AND WAVEFORMS

DUT

V_DS

R_G

I_SD

V_GS

V_DD

Driver

Same Type

as DUT

dv/dt controlled by R_G

I_SDcontrolled by pulse period

Gate Pulse Width

V_GS

Gate Pulse Period

10V

(Driver)

I_FM, Body Diode Forward Current

I_SD

di/dt

(DUT)

I_RM

Body Diode Reverse Current

V_DS

(DUT)

Body Diode Recovery dv/dt

V_SD

V_DD

Body Diode Forward

Voltage Drop

Peak Diode Recovery dv/dt Test Circuit and Waveforms

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UT60N06

Power MOSFET



TEST CIRCUITS AND WAVEFORMS

V_GS

Same Type

as DUT

Q_G

V_DS

Q_GS

Q_GD

V_GS

DUT

Charge

Gate Charge Waveforms

Gate Charge Test Circuit

V_DS

90%

R_G

R_D

V_DS

V_GS

10%

V_GS

DUT

t_R

t_d(OFF)

t_d(ON)

t_ON

Resistive Switching Waveforms

t_F

t_OFF

Resistive Switching Test Circuit

BV_DSS

BV_DSS-V_DD

V_DS

E_AS

LI_AS

BV_DSS

R_G

I_D

I_AS

I_D(t)

DUT

t_P

V_DD

V_DS(t)

Time

t_P

Unclamped Inductive Switching Waveforms

Unclamped Inductive Switching Test Circuit

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UT60N06

Power MOSFET



TYPICAL CHARACTERISTICS

Drain Current vs. Drain-Source

Voltage

Drain-Source On-Resistance vs.

Gate-Source Voltage

120

100

Note:

1.T_A=25°C

2.Pulse test

V_GS=4~10V

2.5V

I_D=30A

60A

Note:

1.T_A=25°C

2.Pulse test

Drain-Source Voltage, V_DS(V)

Gate-Source Voltage, V_GS(V)

Capacitance Characteristics

Gate Charge Characteristics

10000

1000

100

V_DS=48V

V_GS=10V

I_D=60A

Pulsed

CISS

COSS

CRSS

100

Drain-Source Voltage, V_DS(V)

Total Gate Charge, Q_G(nC)

Breakdown Voltage vs. Junction

Temperature

Drain-Source On-Resistance vs.

Junction Temperature

1.5

1.4

1.2

V_GS=10V

I_D=30A

Pulsed

I_D=0.25mA

Pulsed

0.5

0.8

100

125

150

100

125

150

Junction Temperature, T_J(°C)

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UT60N06

Power MOSFET



TYPICAL CHARACTERISTICS (Cont.)

Gate Threshold Voltage vs.

Junction Temperature

Source Current vs. Source-Drain

Voltage

100

1.2

I_D=0.25mA

Pulsed

T_A=150°C

25°C

0.8

0.6

0.4

0.2

0.1

100

125

150

1.2 1.3

0.7 0.8 0.9 1 1.1

0.3 0.4 0.5

0.6

Source-Drain Voltage, V_SD(V)

Junction Temperature, T_J(°C)

Drain Current vs. Gate-Source

Voltage

Drain-Source On-Resistance vs.

Drain Current

6.5

T_A=25°C

Pulsed

V_GS=4.5V

V_GS=10V

5.5

4.5

3.5 T_A=25°C

Pulsed

80 100 120

Drain Current, I_D(A)

Gate-Source Voltage, V_GS(V)

Power Dissipation vs. Junction

Temperature

Drain Current vs. Junction

Temperature

SOP-8

100 125 150

100

125

150

Junction Temperature, T_J(°C)

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UT60N06

Power MOSFET



TYPICAL CHARACTERISTICS (Cont.)

Safe Operating Area

MAX

100

100us

1ms

10ms

Operation in this

area is limited by

R_DS(ON)

SOP-8

0.1

T_J=150°C

T_C=25°C

Single Pulse

0.01

0.1

100

Drain-Source Voltage, V_DS(V)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all UTC products described or contained herein.

UTC products are not designed for use in life support appliances, devices or systems where malfunction

of these products can be reasonably expected to result in personal injury. Reproduction in whole or in

part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to

make changes to information published in this document, including without limitation specifications and

product descriptions, at any time and without notice. This document supersedes and replaces all

information supplied prior to the publication hereof.

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