UT6401 [UTC]
P-CHANNEL ENHANCEMENT MODE; P沟道增强模式
| 型号： | UT6401 |
| 厂家： | 
Unisonic Technologies |
| 描述： | P-CHANNEL ENHANCEMENT MODE |
| 文件： | 总5页 (文件大小：252K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT6401
Power MOSFET
P-CHANNEL
ENHANCEMENT MODE
DESCRIPTION
The UTC UT6401 is P-channel enhancement mode
Power MOSFET, designed with high density cell, with fast
switching speed, low on-resistance, excellent thermal and
electrical capabilities, operation with low gate charge.
This device is suitable for use as a load switch or in PWM
applications.
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
SOT-26
Packing
6
Lead Free Plating
UT6401L-AG6-R
Halogen Free
UT6401G-AG6-R
1
2
3
4
5
D
D
G
S
D
D
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
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QW-R502-151.B
UT6401
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
-30
±12
Continuous Drain Current (Note 3)
Pulsed Drain Current (Note 2)
Power Dissipation
-5
A
IDM
-30
PD
2
W
°C
°C
Junction Temperature
TJ
+150
-55 ~ +150
Storage Temperature
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient (Note 3)
SYMBOL
MIN
TYP
74
MAX
110
UNIT
θJA
℃/W
ELECTRICAL CHARACTERISTICS (TJ=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
BVDSS
IDSS
VGS=0V, ID=-250uA
VDS=-24V, VGS=0V
VDS=0V, VGS=±12V
-30
V
-1
uA
IGSS
±100 nA
VGS(TH)
ID(ON)
VDS=VGS, ID=-250uA
VDS=-5V, VGS=-4.5V
VGS=-10V, ID=-5A
VGS=-4.5V, ID=-4A
VGS=-2.5V, ID=-1A
-0.7
-25
-1
-1.3
V
On State Drain Current
A
42
53
81
49
64
mΩ
mΩ
mΩ
Static Drain-Source On-Resistance (Note 2)
RDS(ON)
119
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
COSS
CRSS
943
108
73
pF
pF
pF
VGS=0V,VDS=-15V,f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note 2)
Turn-ON Rise Time
tD(ON)
tR
tD(OFF)
tF
6
ns
ns
VDS=-15V, VGS=-10V,
RG=6Ω, RL=3Ω
3
Turn-OFF Delay Time
40
11
9.5
2.1
2.9
ns
Turn-OFF Fall Time
ns
Total Gate Charge (Note 2)
Gate-Source Charge
QG
nC
nC
nC
VDS=-15V, VGS=-4.5V,
QGS
QGD
ID=-5A
Gate-Drain Charge
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
Maximum Continuous Drain-Source Diode
Forward Current
VSD
IS=-1A, VGS=0V
-0.75
-1
-3
V
A
IS
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤0.5%.
3. Surface mounted on 1 in2 copper pad of FR4 board.
UNISONIC TECHNOLOGIES CO., LTD
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UT6401
Power MOSFET
TYPICAL CHARACTERISTICS
On-Resistance vs. Gate-Source Voltage
Body-Diode Characteristics
1.0E+01
190
170
150
130
110
90
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
ID=-2A
125℃
125℃
25℃
25℃
70
50
1.0E-05
1.0E-06
30
1
0
0
2
4
6
8
10
1.0
0.0
0.2
0.4
0.6
0.8
1.2
Gate-Source Voltage, -VGS (V)
Source-Drain Voltage, -VSD (V)
UNISONIC TECHNOLOGIES CO., LTD
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UT6401
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Single Pulse Power Rating Junction-to-
Ambient
Gate-Charge Characteristics
5
4
40
30
VDS=-15V
ID=-5A
TJ(Max)=150℃
TA=25℃
3
20
10
2
1
0
0
0.001
0.01
0
0.1
1
10
100 1000
2
4
6
8
10
12
Gate Charge, -QG (nC)
Pulse Width (s)
UNISONIC TECHNOLECO., TD
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UT6401
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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