UT70P02L-TN3-T [UTC]
P-CHANNEL ENHANCEMENT MODE POWER MOSFET; P沟道增强型功率MOSFET型号: | UT70P02L-TN3-T |
厂家: | Unisonic Technologies |
描述: | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
文件: | 总5页 (文件大小:257K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT70P02
Power MOSFET
P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
DESCRIPTION
The UT70P02 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.
FEATURES
* RDS(ON) = 6mΩ @VGS = -10 V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
*Pb-free plating product number: UT70P02L
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
Lead Free Plating
1
2
D
D
3
S
S
UT70P02-TN3-R
UT70P02-TN3-T
UT70P02L-TN3-R
UT70P02L-TN3-T
TO-252
TO-252
G
G
Tape Reel
Tube
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Copyright © 2008 Unisonic Technologies Co., Ltd
QW-R502-209.A
UT70P02
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
-25
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±20
V
Continuous Drain Current , VGS=4.5V
Pulsed Drain Current (Note 1)
Power Dissipation @ TC=25°C
TC=25°C
-75
A
IDM
-350
A
PD
107
W
W/℃
℃
Junction Temperature
Strong Temperature
TJ
+175
-55 ~ +175
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
θJA
MIN
TYP
MAX
110
1.4
UNIT
℃/W
℃/W
Junction-to-Ambient
Junction-to-Case
θJC
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
-25
TYP MAX UNIT
V
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS
VGS =0 V, ID =-250 µA
ΔBVDSS/ΔTJ Reference to 25℃, ID=-1mA
-0.018
V/°С
Drain-Source Leakage Current
Gate-Body Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
(Note 2)
IDSS
IGSS
VDS =-30 V, VGS =0 V, TJ =25°C
VGS = ±20 V
-1
µA
nA
±100
VGS(TH)
RDS(ON)
VDS =VGS, ID =-250 µA
VGS =-10 V, ID =-10 A
VGS =-4.5 V, ID =-10 A
-1
-3
7
V
mΩ
10
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
2700 4200
550
pF
pF
pF
VDS =-25 V, VGS =0 V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge(Note 2)
Gate Source Charge
380
QG
QGS
QGD
tD(ON)
tR
33
7.5
24
52
nC
nC
nC
ns
ns
ns
ns
VDS =-24 V, VGS =-4.5 V,
ID =-30 A
Gate Drain ("Miller") Charge
Turn-ON Delay Time(Note 2)
Turn-ON Rise Time
11.2
77
VGS=-10 V, VDS=-15 V,
RD=0.5 ꢀ, ID =-30 A , RG =3.3 ꢀ
Turn-OFF Delay Time
tD(OFF)
tF
35
Turn-OFF Fall-Time
67
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Forward On Voltage(Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
tRR
IS=-10 A,VGS=0V
IS=-30 A, VGS=0 V,
dI/dt=100 A/μs
-1.3
V
28
10
ns
nC
QRR
Notes: 1.Pulse width limited by safe operating area.
2.Pulse width ≤ 300us , duty cycle ≤ 2%.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-209.A
UT70P02
Power MOSFET
TYPICAL CHARACTERISTICS
Normalized On-Resistance vs.
Junction Temperature
On-Resistance vs. Gate Voltage
ID=-20A
13
11
9
2.0
1.5
ID=-20A
VG=-10V
TC=25°С
7
1.0
0.5
5
3
2
4
8
10
12
-50
25
100
175
6
Gate-to-Source Voltage,-VGS (V)
Junction Temperature,TJ (°С)
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UT70P02
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Effective Transient Thermal Impedance
1
D=0.5
0.2
PDM
t
0.1
0.1
0.05
T
0.02
0.01
Duty factor=t/T
Peak TJ=PDM×θJC+TC
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
10
1
Pulse Width,t (s)
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UT70P02
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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