首页 |元器件品牌

UT9435HL-S08-R [UTC]

P-CHANNEL ENHANCEMENT MODE; P沟道增强模式
UT9435HL-S08-R
型号： UT9435HL-S08-R
厂家： Unisonic Technologies    Unisonic Technologies
描述：

P-CHANNEL ENHANCEMENT MODE
P沟道增强模式

晶体 晶体管 功率场效应晶体管 开关 脉冲 光电二极管
文件： 总5页 (文件大小：250K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
UNISONIC TECHNOLOGIES CO., LTD  
UT9435H  
Power MOSFET  
P-CHANNEL  
ENHANCEMENT MODE  
„
DESCRIPTION  
The UTC UT9435H provide excellent RDS(ON), low gate  
charge and fast switching speed. It has been optimized for  
power management applications.  
„
SYMBOL  
Drain  
Gate  
Source  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free  
Halogen Free  
1
G
S
S
2
D
S
S
3
S
S
S
4
-
5
-
6
-
7
-
8
-
UT9435HL-AA3-R  
UT9435HL-S08-R  
UT9435HL-S08-T  
UT9435HG-AA3-R  
UT9435HG-S08-R  
UT9435HG-S08-T  
SOT-223  
SOP-8  
Tape Reel  
Tape Reel  
Tube  
G
G
D
D
D
D
D
D
D
D
SOP-8  
www.unisonic.com.tw  
1 of 6  
Copyright © 2012 Unisonic Technologies Co., Ltd  
QW-R502-131.C  
UT9435H  
Power MOSFET  
„
PIN CONFIGURATION  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 5  
QW-R502-131.C  
www.unisonic.com.tw  
UT9435H  
Power MOSFET  
„
ABSOLUTE MAXIMUM RATINGS (TA = 25℃, unless otherwise specified)  
PARAMETER  
SYMBOL  
VDS  
VGS  
ID  
RATING  
-30  
UNITS  
Drain-Source Voltage  
V
V
Gate-Source Voltage  
±20  
TA=125℃  
Continuous Drain Current (Note 3)  
Pulsed Drain Current (Note 1, 2)  
Power Dissipation  
±5.3  
A
IDM  
±20  
A
PD  
2.5  
W
℃
℃
Junction Temperature  
TJ  
+150  
-55 ~ +150  
Storage Temperature  
TSTG  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
THERMAL DATA  
PARAMETER  
Junction to Ambient  
SYMBOL  
RATING  
50  
UNIT  
θJA  
℃/W  
„
ELECTRICAL CHARACTERISTICS (TA =25℃, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
Gate-Source Leakage Current  
ON CHARACTERISTICS  
BVDSS  
IDSS  
VGS =0 V, ID =-250 µA  
VDS =-24 V, VGS =0 V  
VDS =0 V, VGS = ±20V  
-30  
V
-1  
µA  
nA  
IGSS  
±100  
Gate Threshold Voltage  
VGS(TH)  
RDS(ON)  
ID(ON)  
VDS =VGS, ID =-250 µA  
VGS =-10V, ID =-5.3A  
VGS =-4.5V, ID =-4.2A  
VDS = -5V, VGS =-10V  
-1  
-3  
50  
90  
V
mΩ  
mΩ  
A
44  
74  
Drain-Source On-State Resistance (Note 2)  
On State Drain Current  
-20  
DYNAMIC PARAMETERS  
Input Capacitance  
CISS  
COSS  
CRSS  
1040  
420  
pF  
pF  
pF  
V
DS =-15V, VGS =0V,  
Output Capacitance  
f=1.0MHz  
Reverse Transfer Capacitance  
SWITCHING PARAMETERS  
Turn-ON Delay Time (Note 2)  
Turn-ON Rise Time  
150  
tD(ON)  
tR  
tD(OFF)  
tF  
19  
9
26  
13  
ns  
ns  
VDD =-15V, ID=-1A,  
VGEN =-10V, RG =6ꢀ  
Turn-OFF Delay Time  
74  
36  
22.5  
2
105  
50  
ns  
Turn-OFF Fall Time  
ns  
Total Gate Charge (Note 2)  
Gate-Source Charge  
QG  
29  
nC  
nC  
nC  
VDS =-15V, VGS =-10V,  
QGS  
QGD  
ID =-4.6A  
Gate-Drain Charge  
6
DRAIN-SOURCE DIODE CHARACTERISTICS  
Drain-Source Diode Forward Voltage(Note 2)  
Notes: 1. Pulse width limited by TJ(MAX)  
2. Pulse width ≤300us, duty cycle ≤2%.  
VSD  
VGS =0V, IS =-5.3A  
-0.84 -1.3  
V
3. Surface mounted on 1 in2 copper pad of FR4 board  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 5  
QW-R502-131.C  
www.unisonic.com.tw  
UT9435H  
Power MOSFET  
„
TYPICAL CHARACTERISTICS  
On-Rseistance Variation with Drain  
Current and Temperature  
Capacitance  
0.18  
0.15  
0.12  
1500  
VGS=-10V  
1250  
1000  
CISS  
750  
500  
0.09  
TJ=25℃  
0.06  
0.03  
0.00  
COSS  
CRSS  
250  
0
0
5
10  
15  
20  
25  
30  
0
5
7.5  
10  
2.5  
Drain-to-Source Voltage,-VDS (V)  
Drain Current,-ID (A)  
UNISONIC TECHNOLOGIES CO., LTD  
of 5  
QW-R502-131.C  
www.unisonic.com.tw  
UT9435H  
Power MOSFET  
„
TYPICAL CHARACTERISTICS(Cont.)  
Maximum Safe Operating Area  
Gate Charge  
50  
10  
10  
8
VDS=-15V  
ID=-5.3A  
10ms  
100ms  
1s  
RDS(ON) Limited  
6
1
DC  
4
2
0
VGS=-10V  
Single Pulse  
TA=25℃  
0.1  
0.03  
0
3
6
9
12 15 18 21 24  
0.1  
1
10  
30 50  
Total Gate Charge,QG (nC)  
Drain-to-Source Voltage,-VDS (V)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 5  
QW-R502-131.C  
www.unisonic.com.tw  

相关型号：

UT9435HL-S08-T

 P-CHANNEL ENHANCEMENT MODE
UTC

UT9435HZ

 P-CHANNEL ENHANCEMENT MODE
UTC

UT9435HZG-AA3-R

 P-CHANNEL ENHANCEMENT MODE
UTC

UT9435HZG-AE3-R

 Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-59, 3 PIN
UTC

UT9435HZG-AG6-R

 P-CHANNEL ENHANCEMENT MODE
UTC

UT9435HZG-S08-R

 P-CHANNEL ENHANCEMENT MODE
UTC

UT9435HZG-S08-T

 P-CHANNEL ENHANCEMENT MODE
UTC

UT9435HZL-AE3-R

 Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-59, 3 PIN
UTC

UT9435HZL-S08-R

 P-CHANNEL ENHANCEMENT MODE
UTC

UT9435HZL-S08-T

 P-CHANNEL ENHANCEMENT MODE
UTC

UT9435HZ_15

 P-CHANNEL ENHANCEMENT MODE
UTC

UT9435H_15

 P-CHANNEL POWER MOSFET
UTC
©2020 ICPDF网 联系我们和版权申明