UTC2SB834 [UTC]
HIGH VOLTAGE TRANSISTOR; 高压晶体管
| 型号： | UTC2SB834 |
| 厂家： | 
Unisonic Technologies |
| 描述： | HIGH VOLTAGE TRANSISTOR |
| 文件： | 总1页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC2SB834
PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
DESCRIPTION
Low frequency power amplifier applications.
1
TO-220
1:BASE 2: COLLECTOR 3: EMITTER
ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified )
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Total Power Dissipation(Ta=25°C)
Collector current
Junction Temperature
Storage Temperature
Base Current
SYMBOL
VCBO
VCEO
VEBO
Pc
Ic
Tj
TSTG
IB
RATING
UNIT
V
V
V
W
A
°C
°C
A
60
60
7
30
3
150
-55 ~ +150
0.5
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
Collector-emitter breakdown voltage
Collector cut-off current
SYMBOL
BVCEO
ICBO
TEST CONDITIONS
Ic=50mA
MIN TYP MAX UNIT
60
V
µA
µA
V
VCB=60V
VEB=7V
100
100
1
1
300
Emitter cut-off current
IEBO
Collector-emitter saturation voltage
Collector-emitter on voltage
DC current gain
VCE(SAT)
VCE(ON)
hFE1
IC=3A,IB=0.3A
VCE=5V,IC=0.5A
IC=0.5A,VCE=5V
IC=3A,VCE=5V
VCE=5V,IC=0.5A
0.7
9
V
60
20
hFE2
Current gain bandwidth product
fT
MHZ
CLASSIFICATION of hFE1
RANK
O
60-120
Y
GR
150-300
RANGE
100-200
1
UTC
UNISONIC TECHNOLOGIES CO. LTD
QW-R203-014,A
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