UTC606P-H [UTC]
P-CHANNEL 1.8V TRENCH MOSFET;型号: | UTC606P-H |
厂家: | Unisonic Technologies |
描述: | P-CHANNEL 1.8V TRENCH MOSFET |
文件: | 总3页 (文件大小:169K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UTC606P-H
Preliminary
Power MOSFET
-6A, -12V, P-CHANNEL 1.8V
TRENCH MOSFET
DESCRIPTION
4
The UTC UTC606P-H is a P-channel MOSFET, it uses UTC’s
advanced technology to provide the customers with a minimum on
state resistance and high switching speed.
5
6
3
The UTC UTC606P-H is suitable for battery management, load
switch and battery protection.
2
1
SOT-26
FEATURES
* RDS(ON) < 26mΩ @ VGS= -4.5V, ID= -6A
R
R
DS(ON) < 35mΩ @ VGS= -2.5V, ID= -5A
DS(ON) < 53mΩ @ VGS= -1.8V, ID= -4A
* High switching speed
* High performance trench technology for extremely low RDS(ON)
SYMBOL
ORDERING INFORMATION
Pin Assignment
Ordering Number
Package
SOT-26
Packing
1
2
3
4
5
6
UTC606PG-AG6-R
D
D
G
D
D
S
Tape Reel
Note: Pin Assignment: G: Gate
D: Drain
S: Source
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
QW-R502-B34.b
UTC606P-H
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
-12
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±8
V
Continuous (Note 2)
Pulsed
-6
A
Drain Current
IDM
-20
A
Power Dissipation
PD
300
mW
°C
°C
Junction Temperature
Storage Temperature Range
TJ
-55~+150
-55~+150
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
θJA
RATINGS
380
UNIT
°C/W
°C/W
Junction to Ambient
Junction-to-Case
θJC
110
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
∆BVDSS
∆TJ
ID=-250µA, VGS=0V
-12
V
Breakdown Voltage Temperature
Coefficient
mV/°
C
ID=-250µA, Referenced to 25°C
VDS=-10V, VGS=0V
-3
Zero Gate Voltage Drain Current
IDSS
IGSS
-1
µA
nA
Forward
VGS=+8V, VDS=0V
100
Gate-Source Leakage Current
Reverse
VGS=-8V, VDS=0V
-100 nA
ON CHARACTERISTICS (Note)
Gate Threshold Voltage
VGS(TH)
∆BVGS(th)
VDS=VGS, ID=-250µA
-0.4 -0.5 -1.5
2.5
V
Gate Threshold Voltage Temperature
Coefficient
mV/°
C
ID=-250µA, Referenced to 25°C
∆TJ
V
GS=-4.5V, ID=-6A
21
26
34
28
26
35
53
35
mΩ
mΩ
mΩ
mΩ
A
VGS=-2.5V, ID=-5A
Static Drain-Source On-State Resistance
RDS(ON)
VGS=-1.8V, ID=-4A
VGS=-4.5V, ID=-6A, TJ=125°C
VGS=-4.5V, VDS=-5V
VDS=-5V, ID=-6A
On State Drain Current
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
ID(ON)
gFS
-20
25
S
CISS
COSS
CRSS
1699
679
pF
pF
pF
Output Capacitance
VGS=0V, VDS=-6V, f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS (Note)
Total Gate Charge
423
QG
QGS
QGD
tD(ON)
tR
18
3
25
nC
nC
nC
ns
ns
ns
ns
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
VGS=-4.5V, VDS=-6V, ID=-6A
4.2
11
10
89
70
19
20
VGS=-4.5V, VDD=-6V, ID=-1A,
RGEN=6Ω
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
142
112
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain–Source
Diode Forward Current
IS
-1.3
A
V
Drain–Source Diode Forward Voltage
VSD
IS=-1.3A,VGS=0V (Note)
-0.6 -1.2
Note: Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2.0%
UNISONIC TECHNOLOGIES CO., LTD
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UTC606P-H
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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