UTD36N03L-TN3-T [UTC]

N-CHANNEL ENHANCEMENT MODE; N沟道增强模式


型号：	UTD36N03L-TN3-T
厂家：	Unisonic Technologies
描述：	N-CHANNEL ENHANCEMENT MODE N沟道增强模式
文件：	总5页 (文件大小：200K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

UTD36N03

Power MOSFET

N-CHANNEL

ENHANCEMENT MODE

FEATURES

* R_DS(ON)= 17mΩ @V_GS= 10 V

* Low capacitance

* Optimized gate charge

* Fast switching capability

* Avalanche energy specified

SYMBOL

2.Drain

*Pb-free plating product number: UTD36N03L

1.Gate

3.Source

ORDERING INFORMATION

Ordering Number

Pin Assignment

Packing

Package

Normal

Lead Free Plating

UTD36N03-TN3-R

UTD36N03-TN3-T

UTD36N03L-TN3-R

UTD36N03L-TN3-T

TO-252

Tape Reel

Tube

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Power MOSFET

ABSOLUTE MAXIMUM RATINGS (T_J=25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_D

RATINGS

UNIT

Drain-Source Voltage

Gate-Source Voltage

±20

Continuous Drain Current

Pulsed Drain Current (Note 1)

Power Dissipation

43.4

I_DM

173.6

57.6

P_D

℃

Junction Temperature

Storage Temperature

T_J

+175

T_STG

-55 ~ +175

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

℃/W

Junction-to-Ambient

θ_JA

ELECTRICAL CHARACTERISTICS (T_J=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

Gate-Source Leakage Current

ON CHARACTERISTICS

BV_DSS

I_DSS

V_GS=0V, I_D=250 µA

V_DS=24V, V_GS=0V

0.05

µA

I_GSS

V_GS= ±20V, V_GS=0V

100

Gate-Threshold Voltage

V_GS(TH)

R_DS(ON)

V_DS=V_GS, I_D=250 µA

V_GS=4.5V, I_D=12A

V_GS=10 V, I_D=25 A

1.5

Drain-Source On-State Resistance

mΩ

DYNAMIC CHARACTERISTICS

Input Capacitance

C_ISS

C_OSS

C_RSS

690

160

110

_DS=25 V, V_GS=0V, f=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING PARAMETERS

Turn-ON Delay Time

Turn-ON Rise Time

t_D(ON)

t_R

t_D(OFF)

t_F

V_DS=15 V, V_GS=10V,

R_G=10ꢀ, R_L=0.6 ꢀ

Turn-OFF Delay Time

Turn-OFF Fall-Time

Total Gate Charge

Q_G

18.5

4.2

2.9

V_DS=15V,V_GS=10V,I_D=36 A

Gate-Source Charge

Gate-Drain Charge

Q_GS

Q_GD

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

Maximum Continuous Drain-Source

Diode Forward Current

V_SD

I_S=25A, V_GS=0V

0.97

1.2

I_S

43.4

Maximum Pulsed Drain-Source Diode

Forward Current

I_SM

173.6

Reverse Recovery Time

t_RR

V_R=15V,I_F=I_S, dI_F/dt=100A/µs

Reverse Recovery Charge

Q_RR

Notes: 1. Pulse width limited by T_J(MAX)

2. Pulse width ≤300us, duty cycle ≤2%.

UNISONIC TECHNOLOGIES CO., LTD

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UTD36N03

Power MOSFET

TYPICAL CHARACTERISTICS

UNISONIC TECHNOLOGIES CO., LTD

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UTD36N03

Power MOSFET

TYPICAL CHARACTERISTICS(Cont.)

UNISONIC TECHNOLOGIES CO., LTD

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UTD36N03

Power MOSFET

TYPICAL CHARACTERISTICS(Cont.)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

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