UTM2513L-TN3-R [UTC]

N-CHANNEL ENHANCEMENT MODE; N沟道增强模式


型号：	UTM2513L-TN3-R
厂家：	Unisonic Technologies
描述：	N-CHANNEL ENHANCEMENT MODE N沟道增强模式
文件：	总4页 (文件大小：208K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

UTM2513

Power MOSFET

N-CHANNEL

ENHANCEMENT MODE

FEATURES

* R_DS(ON)= 10.5mΩ(typ.) @V_GS= 10 V

* R_DS(ON)= 16mΩ(typ.) @V_GS= 4.5 V

* Low capacitance

* Optimized gate charge

* Fast switching capability

* Avalanche energy specified

SYMBOL

2.Drain

Lead-free: UTM2513L

Halogen-free: UTM2513G

1.Gate

3.Source

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Normal

Lead Free Plating

UTM2513L-TN3-R

UTM2513L-TN3-T

Halogen Free

UTM2513-TN3-R

UTM2513-TN3-T

UTM2513G-TN3-R

UTM2513G-TN3-T

TO-252

Tape Reel

Tube

www.unisonic.com.tw

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QW-R502-228.A

UTM2513

Power MOSFET

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_D

RATINGS

UNIT

Drain-Source Voltage

Gate-Source Voltage

±20

Continuous Drain Current

Pulsed Drain Current

Power Dissipation

I_DM

P_D

°C

Junction Temperature

Storage Temperature

T_J

150

T_STG

-55 ~ +150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width limited by T_J(MAX)

ELECTRICAL CHARACTERISTICS (T_J=25°C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

Gate-Source Leakage Current

ON CHARACTERISTICS

BV_DSSV_GS=0V, I_DS=250µA

I_DSS

I_GSS

V_DS=24V, V_GS=0V

V_DS=0V, V_GS=±20V

µA

±100 nA

Gate Threshold Voltage

V_GS(TH)V_DS=V_GS, I_DS=250µA

1.30 1.80 2.50

V_GS=10V, I_DS=12A

R_DS(ON)

10.5

Drain-Source On-State Resistance(Note)

mΩ

_GS=4.5V, I_DS=10A

DYNAMIC CHARACTERISTICS

Input Capacitance

C_ISS

C_OSS

C_RSS

1560

345

V_DS=15V, V_GS=0V, f=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn-ON Delay Time (Note)

Turn-ON Rise Time

245

t_D(ON)

t_R

t_D(OFF)

t_F

_DS=1A, V_DD=15V, R_G=3ꢀ,

Turn-OFF Delay Time

272 285

168 172

Turn-OFF Fall Time

Total Gate Charge (Note)

Gate-Source Charge

Q_G

3.6

8.4

V_DS=15V, V_GS=10V, I_DS=10A

Q_GS

Q_GD

Gate-Drain Charge

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage(Note)

V_SD

I_SD=10A, V_GS=0V

0.9

1.3

Note: Pulse width ≤300us, duty cycle ≤2%

UNISONIC TECHNOLOGIES CO., LTD

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QW-R502-228.A

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UTM2513

Power MOSFET

TYPICAL CHARACTERISTICS

UNISONIC TECHNOLOGIES CO., LTD

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UTM2513

Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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