UTM3023-TN3-T [UTC]
N-CHANNEL ENHANCEMENT MODE; N沟道增强模式
| 型号： | UTM3023-TN3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL ENHANCEMENT MODE |
| 文件： | 总5页 (文件大小：168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UTM3023
Power MOSFET
N-CHANNEL
ENHANCEMENT MODE
FEATURES
* RDS(ON) = 20mΩ @VGS = 10 V
* Low capacitance
* Optimized gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
2.Drain
*Pb-free plating product number: UTM3023L
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
Lead Free Plating
1
2
D
D
3
S
S
UTM3023-TN3-R
UTM3023-TN3-T
UTM3023L-TN3-R
UTM3023L-TN3-T
TO-252
TO-252
G
G
Tape Reel
Tube
www.unisonic.com.tw
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Copyright © 2008 Unisonic Technologies Co., Ltd
QW-R502-178.A
UTM3023
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
30
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±20
Maximum Continuous Drain Current
Maximum Pulsed Drain Current
Maximum Power Dissipation
30
A
IDM
70
PD
62.5
150
W
°C
Maximum Junction Temperature
Storage Temperature Range
TJ
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
BVDSS VGS =0 V, IDS =250µA
30
V
IDSS
IGSS
VDS =24 V, VGS =0 V
VDS =0 V, VGS = ±20V
1
µA
±100 nA
Gate Threshold Voltage
VGS(TH) VDS =VGS, IDS =250 µA
1
1.5
15
22
2
V
VGS =10 V, IDS =20 A
RDS(ON)
20
28
Drain-Source On-State Resistance(Note 2)
mΩ
VGS =5 V, IDS =10 A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
COSS
CRSS
1200
220
V
DS =15 V, VGS =0V, f=1.0MHz
pF
ns
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note 2)
Turn-ON Rise Time
100
tD(ON)
tR
tD(OFF)
tF
11
17
37
20
15
5.8
3.8
18
26
54
30
20
IDS=2 A,VDD=15 V,RG=6 ꢀ,
GEN =10V
V
Turn-OFF Delay Time
Turn-OFF Fall Time
Total Gate Charge (Note 2)
Gate-Source Charge
QG
VDS =15V, VGS =5V, IDS =10A
nC
V
QGS
QGD
Gate-Drain Charge
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
Note: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%
VSD
ISD=15A,VGS=0V
0.7
1.3
3. Surface Mounted on FR4 Board, t ≤ 10 sec.
UNISONIC TECHNOLOGIES CO., LTD
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UTM3023
Power MOSFET
TYPICAL CHARACTERISTICS
Output Characteristics
Transfer Characteristics
VDS=10V
30
25
20
15
10
5
40
30
VGS=5,6,7,8,9,10V
4V
20
TJ=25℃
TJ=125℃
10
0
TJ=-55℃
VGS=3V
8
0
1.5
2.0
2.5
3.0
3.5
4.0
0
2
4
6
10
1.0
Drain-to-Source Voltage,VDS (V)
Gate-to-Source Voltage,VGS (V)
Threshold Voltage vs. Junction
Temperature
On-Resistance vs. Drain Current
0.040
0.035
0.030
1.2
1.0
IDS=250μA
VGS=5V
0.025
0.020
0.8
VGS=10V
0.015
0.010
0.005
0.000
0.6
0.4
-50
0
25 50 75 100 125 150
0
5
10
15
20
25
-25
30
Junction Temperature,TJ (℃)
Drain Current,IDS (A)
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UTM3023
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Single Pulse Power
Source-Drain Diode Forward Voltage
3000
2500
2000
100
10
1
1500
1000
500
0
TJ=125℃
TJ=-55℃
TJ=25℃
0.1
0.0 0.2 0.4
1.0 1.2
10-5 10-4
10-3 10-2 10-1
Time (sec)
100
101
1.4
0.6 0.8
Source to Drain Voltage,VSD (V)
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UTM3023
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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