UTM4052L-TN4-R [UTC]
DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL); 双增强模式（ N沟道/ P沟道）
| 型号： | UTM4052L-TN4-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) |
| 文件： | 总9页 (文件大小：435K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UTM4052
Power MOSFET
DUAL ENHANCEMENT MODE
(N-CHANNEL/P-CHANNEL)
FEATURES
SOP-8
* N-Channel: 40V/7.5A
R
R
DS(ON) = 30 mΩ (typ.) @VGS =10V
DS(ON) = 46 mΩ(typ.) @ VGS= 5V
* P-Channel: -40V/-6A
R
R
DS(ON) = 45 mΩ(typ.) @ VGS= -10V
DS(ON) = 52 mΩ(typ.) @ VGS= -5V
1
* Super High Dense Cell Design
* Reliable and Rugged
TO-252-4
SYMBOL
D
G2
G1
S2
S1
N-Channel
P-Channel
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
SOP-8
Packing
Lead Free
Halogen Free
1. 2. 3. 4. 5. 6. 7. 8.
UTM4052L-S08-R
UTM4052L-TN4-R
UTM4052L-TN4-T
UTM4052G-S08-R
UTM4052G-TN4-R
UTM4052G-TN4-T
S1 G1 S2 G2 D
D
-
D
-
D
Tape Reel
Tape Reel
Tube
TO-252-4 S1 G1 D S2 G2
TO-252-4 S1 G1 D S2 G2
-
-
-
-
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Copyright © 2010 Unisonic Technologies Co., Ltd
QW-R502-137.E
UTM4052
Power MOSFET
PIN CONFIGURATION
Source 1
Gate 1
Drain
Drain
Drain
1
2
3
4
8
7
6
5
4
Gate 2
Source 2
Drain
3
Source 2
Gate 2
Gate 1
2
1
Drain
Source 1
5
TO-252-4
SOP-8
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UTM4052
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (Ta=25°C unless otherwise specified)
N-CHANNEL
PARAMETER
SYMBOL
VDS
RATINGS
UNIT
V
Drain-Source Voltage
40
±20
Gate-Source Voltage
VGS
V
Continuous Drain Current (Note 2)
Pulsed Drain Current (Note 2)
TC=25°C
TC=25°C
SOP-8
ID
7.5
A
IDM
30
A
3.1
W
W
°C
°C
Power Dissipation (TC=25°C)
PD
TO-252-4
25
Junction Temperature
Storage Temperature
TJ
+150
-55 ~ +150
TSTG
P-CHANNEL
PARAMETER
SYMBOL
VDS
RATINGS
-40
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 2)
Pulsed Drain Current (Note 2)
VGS
±20
V
TC=25°C
TC=25°C
SOP-8
ID
-6
A
IDM
-25
A
3.1
W
W
°C
°C
Power Dissipation (TC=25°C)
PD
TO-252-4
25
Junction Temperature
Storage Temperature
TJ
+150
-55 ~ +150
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Surface Mounted on 1in 2 pad area, t≤10sec.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
°C/W
°C/W
°C/W
°C/W
SOP-8
78
50
40
5
Junction to Ambient (Note)
θJA
TO-252-4
SOP-8
Junction to Case
θJC
TO-252-4
Note: Surface Mounted on 1in 2 pad area, t≤10sec.
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UTM4052
Power MOSFET
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
N-CHANNEL
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
BVDSS
IDSS
VGS=0V, ID=250uA
VDS=32V, VGS=0V
VDS=0V, VGS=±20V
40
V
1
uA
IGSS
±100 nA
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250uA
VGS=10V, ID=7.5A
VGS=5V, ID=5A
1.3
2
2.5
38
62
V
30
46
mΩ
mΩ
Drain-Source On-State Resistance (Note2)
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
COSS
CRSS
480
70
pF
pF
pF
V
GS=0V,VDS=20V,f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note2)
Turn-ON Rise Time
50
tD(ON)
tR
tD(OFF)
tF
7
10
17
3
14
19
32
6
ns
ns
VDS=20V, VGS=10V, ID=1A,
RG=6Ω, RL=20Ω
Turn-OFF Delay Time
ns
Turn-OFF Fall Time
ns
Total Gate Charge (Note2)
Gate-Source Charge
QG
17
2.2
4
24
nC
nC
nC
VDS=20V, VGS=10V, ID=7.5A
QGS
QGD
Gate-Drain Charge
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
TJ=25℃, IS=2A, VGS=0V
Drain-Source Diode Forward Voltage(Note2)
Diode Continuous Forward Current (Note3)
Reverse Recovery Time
VSD
IS
0.8
1.1
20
V
A
tRR
QRR
21
16
ns
nC
IDS=7.5A, dI/dt=100A/μs
Reverse Recovery Charge
P-CHANNEL
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
BVDSS
IDSS
VGS=0V, ID=-250uA
VDS=-32V, VGS=0V
VDS=0V, VGS=±20V
-40
V
-1
uA
IGSS
±100 nA
VGS(TH)
RDS(ON)
VDS=VGS, ID=-250uA
VGS=-10V, ID=-6A
VGS=-5V, ID=-3.5A
-1.3
-2
45
52
-2.5
50
V
mΩ
mΩ
Drain-Source On-State Resistance (Note2)
73
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
COSS
CRSS
970
100
70
pF
pF
pF
VGS=0V,VDS=-20V,f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note2)
Turn-ON Rise Time
tD(ON)
tR
tD(OFF)
tF
5
11
37
12
17
2.2
4
10
21
68
23
24
ns
ns
VDS=-20V, VGS=-10V,
ID=-1A, RG=6Ω, RL=20Ω
Turn-OFF Delay Time
ns
Turn-OFF Fall Time
ns
Total Gate Charge (Note2)
Gate-Source Charge
QG
nC
nC
nC
VDS=-20V, VGS=-10V,
QGS
QGD
ID=-6A
Gate-Drain Charge
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UTM4052
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
TJ=25℃, IS=-2A, VGS=0V
Drain-Source Diode Forward Voltage(Note2)
Diode Continuous Forward Current (Note3)
Reverse Recovery Time
VSD
IS
-0.8 -1.1
V
A
-18
tRR
QRR
17
10
ns
nC
I
DS=-6A, dI/dt=100A/μs
Reverse Recovery Charge
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
3. Surface Mounted on 1in 2 pad area, t≤10sec.
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UTM4052
Power MOSFET
TYPICAL CHARACTERISTICS
N-CHANNEL
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UTM4052
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
P-CHANNEL
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UTM4052
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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