UTM4953G-S08-R [UTC]
DUAL P-CHANNEL ENHANCEMENT MODE; 双P沟道增强模式
| 型号： | UTM4953G-S08-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | DUAL P-CHANNEL ENHANCEMENT MODE |
| 文件： | 总4页 (文件大小：175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UTM4953
Power MOSFET
DUAL P-CHANNEL
ENHANCEMENT MODE
DESCRIPTION
The UTM4953 uses advanced UTC technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.
SOP-8
FEATURES
* RDS(ON)<60mΩ @VGS=-10V
* RDS(ON)<95mΩ @VGS=-4.5V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
(7) (8)
D1
(5) (6)
D2
(4)
G2
(2)
G1
S2
(3)
S1
(1)
ORDERING INFORMATION
Ordering Number
Package
SOP-8
Packing
Lead Free
Halogen Free
UTM4953L-S08-R
UTM4953G-S08-R
Tape Reel
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Copyright © 2012 Unisonic Technologies Co., Ltd
QW-R502-293.B
UTM4953
Power MOSFET
PIN CONFIGURATION
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UTM4953
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25℃, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
-30
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±25
V
Continuous
Pulsed
-4.9
Drain Current
A
IDM
-30
Power Dissipation
PD
2.5
W
°C
°C
Junction Temperature
Storage Temperature
TJ
+150
-55 ~ +150
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
50
UNIT
°C/W
Junction to Ambient
θJA
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ON CHARACTERISTICS
BVDSS
IDSS
VGS=0V, ID=-250µA
-30
V
VDS=-24V, VGS=0V
VDS=0V, VGS=±25V
-1
µA
nA
IGSS
±100
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=-250µA
-1
-1.5
53
-2
60
95
V
VGS=-10V, ID=-4.9A
Static Drain-Source On-Resistance
mΩ
VGS=-4.5V, ID=-3.6A
80
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
1260
340
pF
pF
pF
Output Capacitance
V
DS=-25V, VGS=0V, f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS (Note)
Turn-ON Delay Time
Turn-ON Rise Time
220
tD(ON)
tR
tD(OFF)
tF
10
15
18
20
38
25
29
ns
ns
VGEN=-10V, VDD=-15V, RL=7.5ꢀ,
RG=6ꢀ, ID=-2A
Turn-OFF Delay Time
Turn-OFF Fall-Time
22
ns
15
ns
Total Gate Charge
QG
22.3
4.65
2
nC
nC
nC
Gate Source Charge
Gate Drain Charge
QGS
QGD
VDS=-15V, VGS=-10V, ID=-4.6A
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
ISD=-1.7A, VGS=0V
-0.7
-1.3
V
Note: Pulse width≦300µs, Duty cycle≦2%
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-293.B
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UTM4953
Power MOSFET
TYPICAL CHARACTERISTICS
Drain-Source On Resistance
ID=4.9A
60
50
40
30
20
10
0
2
4
6
8
10
0
Gate-Source Voltage,VGS(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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