UTR4502L-AE2-R [UTC]

-1.95 Amps, -30 Volts P-CHANNEL POWER MOSFET; -1.95安培，伏特-30 P沟道功率MOSFET


型号：	UTR4502L-AE2-R
厂家：	Unisonic Technologies
描述：	-1.95 Amps, -30 Volts P-CHANNEL POWER MOSFET -1.95安培，伏特-30 P沟道功率MOSFET
文件：	总4页 (文件大小：218K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

UTR4502

Power MOSFET

-1.95 Amps, -30 Volts

P-CHANNEL POWER MOSFET

DESCRIPTION

The UTR4502 uses UTC advanced technology to provide

excellent R_DS(ON), low gate charge and operation with low gate

voltages. This device is suitable for use as a load switch or in PWM

applications.

FEATURES

* R_DS(ON)<155mΩ @V_GS=-10V

* R_DS(ON)<240mΩ @V_GS=-4.5V

* Low capacitance

* Optimized gate charge

* Fast switching capability

* Avalanche energy specified

SYMBOL

3.Drain

2.Gate

1.Source

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

Halogen Free

UTR4502L-AE2-R

UTR4502L-AE3-R

UTR4502G-AE2-R

UTR4502G-AE3-R

SOT-23-3

SOT-23

Tape Reel

MARKING

45B

L: Lead Free

G: Halogen Free

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QW-R502-234.C

UTR4502

Power MOSFET

ABSOLUTE MAXIMUM RATINGS (T_A=25℃, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_D

RATINGS

-30

UNIT

Drain-Source Voltage

Gate-Source Voltage

±20

Continuous Drain Current (Note 3)

Pulsed Drain Current (Note 1, 2)

Total Power Dissipation

-1.13

-6.8

I_DM

P_D

0.4

℃

Junction Temperature

T_J

+150

Storage Temperature

T_STG

-55 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

300

UNIT

℃/W

Junction-to-Ambient

θ_JA

ELECTRICAL CHARACTERISTICS (T_J=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

Gate-Source Leakage Current

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

BV_DSS

I_DSS

V_GS=0 V, I_D=-250µA

V_DS=-30V, V_GS=0V

V_DS=0V, V_GS=±20V

-30

-1

µA

I_GSS

±100

V_GS(TH)

R_DS(ON)

V_DS=V_GS, I_D=-250µA

V_GS=-10V, I_D=-1.95A

V_GS=-4.5V, I_D=-1.5A

-1.0

-3.0

200

350

155

240

Static Drain-Source On-Resistance (Note 2)

mΩ

DYNAMIC PARAMETERS

Input Capacitance

C_ISS

C_OSS

C_RSS

200

_DS=-15V, V_GS=0V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING PARAMETERS (Note 4)

Turn-ON Delay Time

t_D(ON)

t_R

t_D(OFF)

t_F

5.2

17.5

Turn-ON Rise Time

V_GS=-10V, V_DD=-15V,

I_D=-1.95A, R_GEN=6ꢀ

Turn-OFF Delay Time

Turn-OFF Fall-Time

Total Gate Charge

Q_G(TOT)

Q_G(TH)

Q_GS

Threshold Gate Charge

Gate Source Charge

V_DS=-15V, V_GS=-10V,

I_D=-1.95A

0.3

Gate Drain Charge

Q_GD

1.7

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS (Note 3)

Drain-Source Diode Forward Voltage(Note2)

V_SD

I_S=-1.25A, V_GS=0V

_GS=0V, dI_SD/d_t=100A/s

I_S=-1.25A

-0.8

-1.2

Reverse Recovery Time

t_RR

Note: 1. Pulse width limited by T_J(MAX)

2. Pulse width ≤300us, duty cycle ≤2%.

UNISONIC TECHNOLOGIES CO., LTD

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UTR4502

Power MOSFET

TYPICAL CHARACTERISTICS

Drain Current vs.

Drain-Source Breakdown Voltage

Drain Current vs. Gate Threshold Voltage

-300

-250

-200

-150

-100

-300

-250

-200

-150

-100

-50

-10

-20

-30

-40

-500

-1000

-1500

Gate Threshold Voltage, V_TH(mV)

Drain-Source Breakdown Voltage, BV_DSS(V)

Drain-Source

On-State Resistance Characteristics

-2.5

-2.0

V_GS=-10V

I_D=-1.95A

-1.5

-1.0

V_GS=-4.5V

I_D=-1.5A

-0.5

-50

-100

-150

-200

Drain to Source Voltage, V_DS(mV)

UNISONIC TECHNOLOGIES CO., LTD

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UTR4502

Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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