UTT50P10_15 [UTC]
P-CHANNEL POWER MOSFET;
| 型号： | UTT50P10_15 |
| 厂家： | 
Unisonic Technologies |
| 描述： | P-CHANNEL POWER MOSFET |
| 文件： | 总2页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UTT50P10
Preliminary
Power MOSFET
-50A, -100V P-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC UTT50P10 is a P-channel power MOSFET using
UTC’s advanced technology to provide the customers with high
switching speed and a minimum on-state resistance. It can also
withstand high energy in the avalanche.
FEATURES
* VDS=-100V
* ID =-50A
* RDS(ON)=0.023Ω @ VGS=-10V, ID=-20A
* High Switching Speed
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Package
TO-220
Packing
Tube
Halogen Free
UTT50P10G-TA3-T
D: Drain S: Source
1
2
3
UTT50P10L-TA3-T
G
D
S
Note: Pin Assignment: G: Gate
www.unisonic.com.tw
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Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R502-607.a
UTT50P10
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VGSS
ID
RATINGS
±20
UNIT
V
Gate-Source Voltage
Continuous
Pulsed
-50
A
Drain Current
IDM
-90
A
Power Dissipation
PD
225
W
Junction Temperature
Storage Temperature
TJ
+150
-55~+150
°C
°C
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
0.55
UNIT
°C/W
Junction to Case
θJC
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=-250µA, VGS=0V
VDS=0.8×Max.rating, VGS=0V, TJ=25°C
-100
V
-1
Drain-Source Leakage Current
IDSS
µA
VDS=0.8×Max.rating, VGS=0V, TJ=125°C
-500
+100
-100
Gate- Source Leakage
Current
Forward
Reverse
VGS=+20V
GS=-20V
nA
nA
IGSS
V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=-250µA
-1
-3
0.019 0.023
0.021 0.025
80
V
ꢀ
Static Drain-Source On-State
Resistance
VGS=-10V, ID=-20A
RDS(ON)
VGS=-4.5V, ID=-15A
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
gFS
VDS=-15V, ID=-20A
S(1/ꢀ)
CISS
COSS
CRSS
11100
700
pF
pF
pF
VGS=0V, VDS=-50V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Rise Time
1700
tD(ON)
tR
tD(OFF)
tF
20
30
ns
ns
ns
ns
510 855
145 220
870 1300
VDD=-50V, VGS=-10V, ID=-50A, RG=1ꢀ
Turn-OFF Delay Time
Fall-Time
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
IF=-20A, VGS=0V, Pulse test, t≤300μs,
duty cycle d≤2%
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
VSD
tRR
-1.0 -1.5
V
TJ=25°C, IF=-20A, VR=-50V,
di/dt=-100A/µs
80
120
ns
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
2 of 2
QW-R502-607.a
www.unisonic.com.tw
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