UTT60N05L-TA3-T [UTC]
60A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR; 60A ， 50V N沟道增强型功率MOSFET晶体管
| 型号： | UTT60N05L-TA3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 60A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR |
| 文件： | 总3页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UTT60N05
Preliminary
Power MOSFET
60A, 50V N-CHANNEL
ENHANCEMENT MODE POWER
MOSFET TRANSISTOR
DESCRIPTION
The UTC UTT60N05 is an N-channel enhancement power
MOSFET using UTC’s advanced technology to provide the
customers with perfect RDS(ON), high switching speed, high current
capacity and low gate charge.
The UTC UTT60N05 is suitable for motor control, AC-DC or
DC-DC converters and audio amplifiers, etc.
FEATURES
* RDS(ON)=14mΩ @ VGS=10V,ID=20A
* High Switching Speed
* High Current Capacity
* Low Gate Charge(typical 39nC)
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
TO-220
Packing
Tube
Lead Free
Halogen Free
UTT60N05G-TA3-T
1
2
3
UTT60N05L-TA3-T
G
D
S
Note: Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R502-662.a
UTT60N05
Preliminary
Power MOSFE
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
SYMBOL
VDSS
VGSS
ID
RATINGS
50
UNIT
V
Gate-Source Voltage
±20
V
Continuous
60
A
Drain Current
Pulsed
IDM
120
A
Single Pulsed
Avalanche Energy
EAS
600
mJ
mJ
W
Repetitive
EAR
150
Power Dissipation
PD
125
Junction Temperature
Storage Temperature
TJ
+150
-55 ~ +150
°C
°C
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
62.5
1
θJC
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
ID=250µA, VGS=0V
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
50
V
VDS=50V, VGS=0V
VGS=+20V, VDS=0V
1
µA
Forward
Reverse
+100 nA
-100 nA
Gate- Source Leakage Current
IGSS
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=20A
2
4
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
14
18 mꢀ
CISS
COSS
CRSS
2000
400
pF
pF
pF
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
115
QG
QGS
QGD
tD(ON)
tR
39
12
10
12
11
25
15
60
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=30V, ID=60A,
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
IG=3.33mA
30
30
50
30
VDD=30V, ID=15A, RG=4.7ꢀ,
VGS=10V
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
IS
60
A
A
V
ISM
VSD
120
IS=60A, VGS=0V
1.6
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-662.a
www.unisonic.com.tw
UTT60N05
Preliminary
Power MOSFE
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-662.a
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