UTT65P04 [UTC]

65A, 40V P-CHANNEL POWER MOSFET; 65A , 40V P沟道功率MOSFET
UTT65P04
型号: UTT65P04
厂家: Unisonic Technologies    Unisonic Technologies
描述:

65A, 40V P-CHANNEL POWER MOSFET
65A , 40V P沟道功率MOSFET

文件: 总3页 (文件大小:128K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
UTT65P04  
Preliminary  
Power MOSFET  
65A, 40V P-CHANNEL  
POWER MOSFET  
„
DESCRIPTION  
The UTC UTT65P04 is a P-channel power MOSFET using UTC’s  
advanced technology to provide the customers with high switching  
speed and a minimum on-state resistance. It can also withstand high  
energy in the avalanche.  
„
FEATURES  
* RDS(ON)=0.012@ VGS=-10V, ID=-30A  
* High Switching Speed  
„
SYMBOL  
2.Drain  
1.Gate  
3.Source  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
TO-220  
Packing  
Tube  
Lead Free  
Halogen Free  
1
2
3
UTT65P04L-TA3-T  
UTT65P04G-TA3-T  
G
D
S
Note: Pin Assignment: G: Gate  
D: Drain  
S: Source  
www.unisonic.com.tw  
1 of 3  
Copyright © 2011 Unisonic Technologies Co., Ltd  
QW-R502-615.a  
UTT65P04  
Preliminary  
Power MOSFET  
„
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VDSS  
RATINGS  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
-40  
±20  
VGSS  
V
Continuous TC=25°C  
(TJ=175°C)  
TC=125°C  
-65  
A
ID  
Drain Current  
-37  
A
Pulsed  
IDM  
IAR  
-240  
A
Avalanche Current  
-60  
A
Repetitive Avalanche Energy (Note 2)  
EAR  
PD  
180  
mJ  
W
°C  
°C  
Power Dissipation  
TC=25°C  
120 (Note 4)  
-55~+175  
-55~+175  
Junction Temperature  
Storage Temperature  
TJ  
TSTG  
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. Duty cycle1%.  
3. When mounted on 1” square PCB (FR-4 material).  
4. See SOA curve for voltage derating.  
„
THERMAL CHARACTERISTICS  
PARAMETER  
SYMBOL  
θJA  
RATINGS  
62.5  
UNIT  
°C/W  
°C/W  
Junction to Ambient  
Junction to Case  
θJC  
1.25  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 3  
QW-R502-615.a  
www.unisonic.com.tw  
UTT65P04  
Preliminary  
Power MOSFET  
„
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN  
TYP MAX UNIT  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
BVDSS ID=-250µA, VGS=0V  
VDS=-40V, VGS=0V  
-40  
V
-1  
Drain-Source Leakage Current  
IDSS  
µA  
VDS=-40V, VGS=0V, TJ=125°C  
VDS=-40V, VGS=0V, TJ=175°C  
VGS=+20V, VDS=0V  
-50  
-250  
+100  
-100  
Forward  
Reverse  
nA  
nA  
Gate- Source Leakage Current  
IGSS  
VGS=-20V, VDS=0V  
ON CHARACTERISTICS  
Gate Threshold Voltage  
VGS(TH) VDS=VGS, ID=-250µA  
VGS=-10V, ID=-30A  
-1  
-3  
0.012 0.015  
0.024  
V
Static Drain-Source On-State Resistance  
(Note 4)  
VGS=-10V, ID=-30A, TJ=125°C  
RDS(ON)  
VGS=-10V, ID=-30A, TJ=175°C  
VGS=-4.5V, ID=-20A  
0.030  
0.018 0.023  
Forward Transconductance (Note 1)  
On State Drain Current (Note 1)  
DYNAMIC PARAMETERS (Note 2)  
Input Capacitance  
gFS  
VDS=-15V, ID=-50A  
20  
S
A
ID(ON) VGS=-10V, VDS=-5V  
-120  
CISS  
5400  
640  
pF  
pF  
pF  
VGS=0V, VDS=-25V, f=1.0MHz  
Output Capacitance  
COSS  
CRSS  
Reverse Transfer Capacitance  
SWITCHING PARAMETERS (Note 2, 3)  
Total Gate Charge  
300  
QG  
QGS  
QGD  
tD(ON)  
tR  
85  
25  
130  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
V
GS=-10V, VDS=-20V, ID=-65A  
DD=-20V, ID=-65A,  
Gate to Source Charge  
Gate to Drain Charge  
15  
Turn-ON Delay Time  
15  
25  
V
Rise Time  
380  
75  
580  
115  
210  
VGEN=-10V, RL=0.3,  
Turn-OFF Delay Time  
tD(OFF)  
tF  
RG=2.5ꢀ  
Fall-Time  
140  
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS (TC=25°C) (Note 2)  
Maximum Body-Diode Continuous Current  
Maximum Body-Diode Pulsed Current  
Drain-Source Diode Forward Voltage  
(Note 1)  
IS  
-65  
A
A
ISM  
-240  
VSD  
IF=-65A, VGS=0V  
-1.2  
-1.5  
V
Body Diode Reverse Recovery Time  
Peak Reverse Recovery Current  
Body Diode Reverse Recovery Charge  
tRR  
IRM(REC)  
QRR  
40  
2.0  
80  
4
ns  
A
IF=-65A, di/dt=100A/µs  
0.04  
0.1  
µC  
Notes: 1. Pulse test; pulse width300µs, duty cycle2%  
2. Guaranteed by design, not subject to production testing.  
3. Independent of operating temperature.  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 3  
QW-R502-615.a  
www.unisonic.com.tw  

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