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元器件品牌
3N187
[VAISH]
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR; 硅双绝缘栅型场效应晶体管
元器件型号：
3N187
生产厂家：
VAISHALI SEMICONDUCTOR
描述和应用：
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR
硅双绝缘栅型场效应晶体管
晶体 晶体管 场效应晶体管 栅
PDF文件：
总8页 (文件大小：490K)
下载文档：
下载PDF数据表文档文件
型号参数：3N187参数
查看货源
3N188
DUAL P CHANNEL ENHANCEMENT MODE MOSFET
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INTERSIL
3N188
DUAL P CHANNEL ENHANCEMENT MODE MOSFET
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31
INTERSIL
3N188
N-CHANNEL JFET
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29
INTERSIL
3N189
N-CHANNEL JFET
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13
INTERSIL
3N189
DUAL P CHANNEL ENHANCEMENT MODE MOSFET
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36
INTERSIL
3N189
DUAL P CHANNEL ENHANCEMENT MODE MOSFET
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11
INTERSIL
3N190
DUAL P CHANNEL ENHANCEMENT MODE MOSFET
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156
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6
INTERSIL
3N190
P-CHANNEL DUAL MOSFET ENHANCEMENT MODE
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14
LINEAR
3N190
Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier
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31
CALOGIC
3N190
P-CHANNEL DUAL MOSFET ENHANCEMENT MODE
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17
LINEAR
3N190
DUAL P CHANNEL ENHANCEMENT MODE MOSFET
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40
INTERSIL
3N190
N-CHANNEL JFET
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21
INTERSIL
3N190
a monolithic dual enhancement mode P-Channel Mosfet
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31
MICROSS
3N190/D
Small Signal Field-Effect Transistor, 0.05A I(D), 40V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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1
NJSEMI
3N190_TO-78
a monolithic dual enhancement mode P-Channel Mosfet
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MICROSS
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