WNM2020-3/TR [VBSEMI]
N-Channel 20 V (D-S) MOSFET;
| 型号： | WNM2020-3/TR |
| 厂家： | 
VBsemi Electronics Co.,Ltd |
| 描述： | N-Channel 20 V (D-S) MOSFET |
| 文件： | 总9页 (文件大小：1051K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WNM2020-3/TR
www.VBsemi.tw
N-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
ID (A)e
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
Definition
TrenchFET® Power MOSFET
100 % Rg Tested
6a
0.028 at VGS = 4.5 V
0.042 at VGS = 2.5 V
0.050 at VGS = 1.8 V
•
•
6a
20
8.8 nC
• Compliant to RoHS Directive 2002/95/EC
5.6
APPLICATIONS
•
DC/DC Converters
•
Load Switch for Portable Applications
SOT-23
G
S
1
2
3
D
Top View
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
20
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
12
6a
TC = 25 °C
T
C = 70 °C
A = 25 °C
5.1
Continuous Drain Current (TJ = 150 °C)
ID
5b, c
4b, c
20
T
A
TA = 70 °C
Pulsed Drain Current
IDM
IS
TC = 25 °C
1.75
1.04b, c
Continuous Source-Drain Diode Current
T
A = 25 °C
TC = 25 °C
TC = 70 °C
2.1
1.3
1.25b, c
Maximum Power Dissipation
PD
W
TA = 25 °C
0.8b, c
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
TJ, Tstg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
RthJF
Typical
80
Maximum
100
Unit
Maximum Junction-to-Ambientb, d
t ≤ 5 s
Steady State
°C/W
Maximum Junction-to-Foot (Drain)
40
60
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
e. Based on TC = 25 °C.
E-mail：China@VBsemi TEL:86-755-83251052
1
WNM2020-3/TR
www.VBsemi.tw
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 µA
ID = 250 µA
Drain-Source Breakdown Voltage
20
V
V
DS Temperature Coefficient
25
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
- 2.6
VDS = VGS , ID = 250 µA
V
0.45
20
1.0
100
1
IGSS
VDS = 0 V, VGS
=
8 V
nA
VDS = 20 V, VGS = 0 V
DS = 20 V, VGS = 0 V, TJ = 70 °C
VDS ≤ 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 5.0 A
VGS = 2.5 V, ID = 4.7 A
VGS = 1.8 V, ID = 4.3 A
VDS = 10 V, ID = 5.0 A
IDSS
µA
A
Zero Gate Voltage Drain Current
On-State Drain Currenta
V
10
ID(on)
0.028
0.042
0.050
24
Drain-Source On-State Resistancea
Forward Transconductancea
Ω
RDS(on)
gfs
S
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
865
105
55
12
8.8
1.1
0.7
2.4
8
V
DS = 10 V, VGS = 0 V, f = 1 MHz
pF
V
DS = 10 V, VGS = 5 V, ID = 5.0 A
18
14
Qg
Total Gate Charge
nC
Qgs
Qgd
Rg
Gate-Source Charge
VDS = 10 V, VGS = 4.5 V, ID = 5.0 A
f = 1 MHz
Gate-Drain Charge
Ω
Gate Resistance
0.5
4.8
16
26
47
16
10
20
32
12
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-On Delay Time
VDD = 10 V, RL = 2.2 Ω
Rise Time
17
31
8
ID ≅ 4 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
ns
Turn-On Delay Time
5
VDD = 10 V, RL = 2.2 Ω
Rise Time
13
21
6
ID ≅ 4 A, VGEN = 5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
IS
ISM
VSD
trr
TC = 25 °C
1.75
20
A
IS = 4 A, VGS = 0 V
0.75
12
5
1.2
20
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
10
IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C
7
ns
tb
5
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
E-mail：China@VBsemi TEL:86-755-83251052
2
WNM2020-3/TR
www.VBsemi.tw
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
5
4
3
2
1
0
V
= 1 0 V t h r u 3 V
GS
15
10
5
V
= 2 . 5 V
GS
T
= 25 °C
C
T
= 125 °C
C
V
= 1 V
1.5
GS
T
= - 55 °C
C
0
0.0
0.5
1.0
2.0
0.0
0.3
V
0.6
0.9
1.2
1.5
- Gate-to-Source Voltage (V)
V
- Drain-to-Source Voltage (V)
GS
DS
Transfer Characteristics
Output Characteristics
0.045
0.040
0.035
0.030
0.025
0.020
1200
900
600
300
0
V
GS
= 1.8 V
= 2.5 V
C
iss
V
GS
V
= 4.5 V
GS
C
oss
C
rss
0
5
10
15
20
0
5
10
15
20
I
- Drain Current (A)
V
- Drain-to-Source Voltage (V)
DS
D
Capacitance
On-Resistance vs. Drain Current and Gate Voltage
5
4
3
2
1
0
1.70
1.45
1.20
0.95
0.70
I
= 5 A
D
V
= 2.5 V, I = 4.7 A
D
GS
V
= 10 V
DS
V
= 5 V
DS
V
= 4.5 V, I = 5 A
D
GS
V
= 16 V
DS
0
2
4
6
8
10
- 50 - 25
0
25
50
75
100 125 150
T
- Junction Temperature (°C)
Q
- Total Gate Charge (nC)
J
g
On-Resistance vs. Junction Temperature
Gate Charge
E-mail：China@VBsemi TEL:86-755-83251052
3
WNM2020-3/TR
www.VBsemi.tw
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.06
0.05
0.04
0.03
0.02
I
= 5 A
D
T
= 150 °C
J
10
T
= 125 °C
J
T
= 25 °C
J
1
T
= 25 °C
J
0.1
0.0
0.3
0.6
0.9
1.2
0
2
4
6
8
V
- Gate-to-Source Voltage (V)
V
- Source-to-Drain Voltage (V)
GS
SD
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.9
0.7
0.5
0.3
0.1
32
24
16
8
I
= 250 μA
D
0
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
100
Time (s)
Single Pulse Power (Junction-to-Ambient)
T
- Temperature (°C)
J
Threshold Voltage
100
Limited by R
*
DS(on)
10
100 μs
1 ms
1
10 ms
T
= 25 °C
A
100 ms
Single Pulse
0.1
1 s, 10 s
DC
BVDSS Limited
0.01
0.1
1
10
100
V
- Drain-to-Source Voltage (V)
DS
* V
> minimum V at which R
is specified
GS
GS
DS(on)
Safe Operating Area, Junction-to-Ambient
E-mail：China@VBsemi TEL:86-755-83251052
4
WNM2020-3/TR
www.VBsemi.tw
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
7.5
6.0
Package Limited
4.5
3.0
1.5
0.0
0
25
50
75
100
125
150
T
- Case Temperature (°C)
C
Current Derating*
2.5
2.0
1.5
1.0
0.5
0.0
1.2
0.9
0.6
0.3
0.0
0
0
25
50
75
100
125
150
25
50
75
100
125
150
T
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
C
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
E-mail：China@VBsemi TEL:86-755-83251052
5
WNM2020-3/TR
www.VBsemi.tw
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
P
DM
0.05
t
1
0.02
t
2
t
1
1. Duty Cycle, D =
t
2
2. Per Unit Base = R
= 125 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
Single Pulse
0.01
4. Surface Mounted
-4
-3
-2
-1
10
10
10
10
1
100
10 000
1000
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.02
Single Pulse
0.05
0.1
10
-4
-3
-2
-1
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
E-mail：China@VBsemi TEL:86-755-83251052
6
WNM2020-3/TR
www.VBsemi.tw
SOT-23 (TO-236): 3-LEAD
b
3
E
1
E
1
2
e
S
e
1
D
0.10 mm
0.004"
C
C
0.25 mm
q
A
2
A
Gauge Plane
Seating Plane
Seating Plane
C
A
1
L
1
L
MILLIMETERS
INCHES
Dim
Min
0.89
0.01
Max
1.12
0.10
Min
0.035
0.0004
Max
0.044
0.004
A
A1
A2
0.88
0.35
0.085
2.80
2.10
1.20
1.02
0.50
0.18
3.04
2.64
1.40
0.0346
0.014
0.003
0.110
0.083
0.047
0.040
0.020
0.007
0.120
0.104
0.055
b
c
D
E
E1
e
0.95 BSC
1.90 BSC
0.0374 Ref
e1
0.0748 Ref
L
0.40
0.60
8°
0.016
0.024
8°
L1
0.64 Ref
0.50 Ref
0.025 Ref
0.020 Ref
S
q
3°
3°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
E-mail：China@VBsemi TEL:86-755-83251052
7
WNM2020-3/TR
www.VBsemi.tw
RECOMMENDED MINIMUM PADS FOR SOT-23
0.037
0.022
(0.950)
(0.559)
0.053
(1.341)
0.097
(2.459)
Recommended Minimum Pads
Dimensions in Inches/(mm)
E-mail：China@VBsemi TEL:86-755-83251052
8
WNM2020-3/TR
www.VBsemi.tw
Disclaimer
All products due to improve reliability, function or design or for other reasons, product specifications and
data are subject to change without notice.
Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their
representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to
the product.(www.VBsemi.tw)
Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of
any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
including a particular purpose, non-infringement and merchantability guarantee.
Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer's
technical experts validated for each customer application. Product specifications do not expand or modify Taiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving,
or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal
injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their
own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and
other terms and conditions in writing.
The information provided in this document and the company's products without a license, express or implied,
by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product
names and trademarks referred to herein are trademarks of their respective representatives will be all.
Material Category Policy
Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be
RoHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw)
Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive
2011/65 /.
Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as
halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products
conform to confirm compliance with IEC 61249-2-21 standard level JS709A.
E-mail：China@VBsemi TEL:86-755-83251052
9
相关型号：
©2020 ICPDF网 联系我们和版权申明