-SL10NIB600S702-PA29F78Z

B0-SL10NIB600S702-PA29F78Z

B0-SL10NIC600S702-PA39F78Z

datasheet

flowNPC S3 split

950 V / 600 A

Topology features

flow S3 12 mm housing

● Kelvin Emitter for improved switching performance

● Temperature sensor

● Neutral Point Clamped Topology (I-Type)

● Split topology

Component features

● Low collector emitter saturation voltage

● High speed and smooth switching

PA29F78Z

PA39F78Z

Housing features

● Base isolation: AlN

● CTI600 housing material

● Compact, baseplate-less housing

● VINcoPress Technology

● Thermo-mechanical push-and-pull force relief

● Press-fit pin

Schematic

● Reliable cold welding connection

Target applications

● Solar Inverters

Types

● B0-SL10NIB600S702-PA29F78Z

● B0-SL10NIC600S702-PA39F78Z

PA29F78Z

PA39F78Z

Copyright Vincotech

1

15 Dec. 2022 / Revision 3

B0-SL10NIB600S702-PA29F78Z

B0-SL10NIC600S702-PA39F78Z

datasheet

Maximum Ratings

T_j= 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

Buck Switch

V_CES

Collector-emitter voltage

950

444

1200

864

±20

175

V

A

I_C

Collector current (DC current)

Repetitive peak collector current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

I_CRM

t_plimited by T_jmax

T_j= T_jmax

A

P_tot

W

V

V_GES

Gate-emitter voltage

T_jmax

Maximum junction temperature

°C

Buck Diode

V_RRM

Peak repetitive reverse voltage

1200

171

V

A

I_F

Forward current (DC current)

Repetitive peak forward current

Surge (non-repetitive) forward current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

I_FRM

I_FSM

P_tot

t_plimited by T_jmax

728

A

Single Half Sine Wave,

t_p= 10 ms

T_j= 25 °C

T_s= 80 °C

1040

432

A

T_j= T_jmax

W

°C

T_jmax

Maximum junction temperature

175

Buck Sw. Protection Diode

V_RRM

Peak repetitive reverse voltage

950

77

V

A

I_F

Forward current (DC current)

Repetitive peak forward current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

I_FRM

t_plimited by T_jmax

T_j= T_jmax

200

160

175

A

P_tot

W

°C

T_jmax

Maximum junction temperature

Copyright Vincotech

2

15 Dec. 2022 / Revision 4

B0-SL10NIB600S702-PA29F78Z

B0-SL10NIC600S702-PA39F78Z

datasheet

Maximum Ratings

T_j= 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

Boost Switch

V_CES

Collector-emitter voltage

1200

528

1200

981

±20

9,5

V

A

I_C

Collector current (DC current)

Repetitive peak collector current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

T_j= 150 °C

I_CRM

t_plimited by T_jmax

T_j= T_jmax

A

P_tot

W

V

V_GES

Gate-emitter voltage

t_SC

Short circuit ratings

V_GE= 15 V, V_CC= 800 V

µs

°C

T_jmax

Maximum junction temperature

175

Boost Diode

V_RRM

Peak repetitive reverse voltage

950

209

600

413

175

V

A

I_F

Forward current (DC current)

Repetitive peak forward current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

I_FRM

t_plimited by T_jmax

T_j= T_jmax

A

P_tot

W

°C

T_jmax

Maximum junction temperature

Boost Sw. Inv. Diode

V_RRM

Peak repetitive reverse voltage

1200

220

450

390

175

V

A

I_F

Forward current (DC current)

Repetitive peak forward current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

I_FRM

t_plimited by T_jmax

T_j= T_jmax

A

P_tot

W

°C

T_jmax

Maximum junction temperature

Copyright Vincotech

3

15 Dec. 2022 / Revision 4

B0-SL10NIB600S702-PA29F78Z

B0-SL10NIC600S702-PA39F78Z

datasheet

Maximum Ratings

T_j= 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

Boost Sw. Protection Diode

V_RRM

Peak repetitive reverse voltage

Forward current (DC current)

Surge (non-repetitive) forward current

Surge current capability

1200

40

V

A

I_F

I_FSM

I²t

T_j= T_jmax

T_s= 80 °C

T_j= 150 °C

T_s= 80 °C

170

145

113

175

A

Single Half Sine Wave,

t_p= 10 ms

A²s

W

°C

P_tot

Total power dissipation

T_j= T_jmax

T_jmax

Maximum junction temperature

Boost D. Protection Diode

V_RRM

Peak repetitive reverse voltage

950

77

V

A

I_F

Forward current (DC current)

Repetitive peak forward current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

I_FRM

t_plimited by T_jmax

T_j= T_jmax

200

160

175

A

P_tot

W

°C

T_jmax

Maximum junction temperature

Module Properties

Thermal Properties

T_stg

T_jop

Storage temperature

-40…+125

°C

Operation temperature under switching

condition

-40…+(T_jmax- 25)

Isolation Properties

Isolation voltage

Creepage distance

Clearance

V_isol

DC Test Voltage*

t_p= 2 s

6000

V

B0-SL10NIB600S702-PA29F78Z

B0-SL10NIC600S702-PA39F78Z

B0-SL10NIB600S702-PA29F78Z

B0-SL10NIC600S702-PA39F78Z

>12,7

mm

9,93

11,58

8,06

Comparative Tracking Index

*100 % tested in production

CTI

≥ 600

Copyright Vincotech

4

15 Dec. 2022 / Revision 4

B0-SL10NIB600S702-PA29F78Z

B0-SL10NIC600S702-PA39F78Z

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Buck Switch

Static

V_GE(th)

Gate-emitter threshold voltage

V_CE= V_GE

0,00975 25

25

4,35

5,1

5,85

V

1,82

2,07

2,13

2,25⁽¹⁾

V_CEsat

Collector-emitter saturation voltage

15

600

125

150

I_CES

I_GES

r_g

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

0

950

0

25

12

µA

nA

Ω

20

25

300

0,5

37800

810

C_ies

C_oes

C_res

Q_g

pF

nC

Output capacitance

f = 100 kHz

0

25

Reverse transfer capacitance

Gate charge

120

±15

0

1350

Thermal

λ_paste= 5,2 W/mK

(PTM)

Thermal resistance junction to sink⁽²⁾

Dynamic

0,11

K/W

R_th(j-s)

25

211,78

215,26

216,47

34,5

t_d(on)

Turn-on delay time

Rise time

125

150

25

ns

t_r

125

150

25

37,3

37,75

270,24

311,24

321,97

29,46

45,96

56,5

R_gon= 2 Ω

R_goff= 4 Ω

t_d(off)

Turn-off delay time

Fall time

125

150

25

ns

±15

600

355

t_f

125

150

25

ns

Q_rFWD=0,835 µC

Q_rFWD=0,851 µC

Q_rFWD=0,855 µC

9,16

E_on

Turn-on energy (per pulse)

Turn-off energy (per pulse)

125

150

25

10,02

9,98

mWs

11,55

17,35

19,23

E_off

125

150

Copyright Vincotech

5

15 Dec. 2022 / Revision 4

B0-SL10NIB600S702-PA29F78Z

B0-SL10NIC600S702-PA39F78Z

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Buck Diode

Static

25

1,72

2,17

2,32

1,8⁽¹⁾

1600

V_F

I_R

Forward voltage

160

125

150

V

Reverse leakage current

Thermal

V_r= 1200 V

25

280

µA

λ_paste= 5,2 W/mK

(PTM)

Thermal resistance junction to sink⁽²⁾

Dynamic

0,22

K/W

R_th(j-s)

25

61,78

62,06

62,93

22,52

22,77

23,05

0,835

0,851

0,855

0,26

I_RM

Peak recovery current

125

150

25

A

t_rr

Reverse recovery time

125

150

25

ns

di/dt=9122 A/µs

di/dt=6238 A/µs

di/dt=6469 A/µs

Q_r

Recovered charge

±15

600

355

125

150

25

μC

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

125

150

25

0,263

0,266

6756,77

7049,49

6408,11

mWs

A/µs

(di_rf/dt)_max

125

150

Copyright Vincotech

6

15 Dec. 2022 / Revision 4

B0-SL10NIB600S702-PA29F78Z

B0-SL10NIC600S702-PA39F78Z

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Buck Sw. Protection Diode

Static

25

2,1

2,64

2,44

2,36

2,8⁽¹⁾

V_F

I_R

Forward voltage

100

125

150

V

Reverse leakage current

Thermal

V_r= 950 V

25

4

µA

λ_paste= 5,2 W/mK

(PTM)

Thermal resistance junction to sink⁽²⁾

0,59

K/W

R_th(j-s)

Copyright Vincotech

7

15 Dec. 2022 / Revision 4

B0-SL10NIB600S702-PA29F78Z

B0-SL10NIC600S702-PA39F78Z

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Boost Switch

Static

V_GE(th)

Gate-emitter threshold voltage

10

0,06

600

25

5,4

6

6,6

V

25

1,69

1,88

1,93

1,85⁽¹⁾

V_CEsat

Collector-emitter saturation voltage

15

125

150

I_CES

I_GES

r_g

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

0

1200

0

25

300

µA

nA

Ω

20

1500

0,667

111000

3300

C_ies

C_oes

C_res

Q_g

pF

nC

Output capacitance

0

10

25

Reverse transfer capacitance

Gate charge

1260

V_CC= 600 V

0/15

600

3600

Thermal

λ_paste= 5,2 W/mK

(PTM)

Thermal resistance junction to sink⁽²⁾

Dynamic

0,1

K/W

R_th(j-s)

25

579,15

583,32

587

t_d(on)

Turn-on delay time

Rise time

125

150

25

ns

159,66

178,99

185,61

356,71

389,7

401,8

76,99

97,68

103,24

69,98

89,22

95,96

39,36

49,08

51,32

t_r

125

150

25

R_gon= 2 Ω

R_goff= 2 Ω

t_d(off)

Turn-off delay time

Fall time

125

150

25

ns

±15

600

t_f

125

150

25

ns

Q_rFWD=5 µC

E_on

Turn-on energy (per pulse)

Turn-off energy (per pulse)

Q_rFWD=14,99 µC

Q_rFWD=18,2 µC

125

150

25

mWs

E_off

125

150

Copyright Vincotech

8

15 Dec. 2022 / Revision 4

B0-SL10NIB600S702-PA29F78Z

B0-SL10NIC600S702-PA39F78Z

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Boost Diode

Static

25

2,1

2,59

2,43

2,37

2,8⁽¹⁾

V_F

I_R

Forward voltage

300

125

150

V

Reverse leakage current

Thermal

V_r= 950 V

25

12

µA

λ_paste= 5,2 W/mK

(PTM)

Thermal resistance junction to sink⁽²⁾

Dynamic

0,23

K/W

R_th(j-s)

25

65,6

113,82

120,13

169,26

278,24

317,94

5

I_RM

Peak recovery current

125

150

25

A

t_rr

Reverse recovery time

125

150

25

ns

di/dt=2823 A/µs

di/dt=2590 A/µs

di/dt=2276 A/µs

Q_r

Recovered charge

±15

600

125

150

25

14,99

18,2

μC

1,12

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

125

150

25

3,78

mWs

A/µs

4,67

722,67

604,7

472,81

(di_rf/dt)_max

125

150

Copyright Vincotech

9

15 Dec. 2022 / Revision 4

B0-SL10NIB600S702-PA29F78Z

B0-SL10NIC600S702-PA39F78Z

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Boost Sw. Inv. Diode

Static

25

1,45

1,9

1,83

1,8

1,95⁽¹⁾

2,28

V_F

I_R

Forward voltage

225

125

150

V

Reverse leakage current

Thermal

V_r= 1200 V

25

µA

λ_paste= 5,2 W/mK

(PTM)

Thermal resistance junction to sink⁽²⁾

0,24

K/W

R_th(j-s)

Boost Sw. Protection Diode

Static

25

2,53

2,67

2,58

2,62⁽¹⁾

V_F

I_R

Forward voltage

35

125

150

25

V

2,62⁽¹⁾

60

Reverse leakage current

Thermal

V_r= 1200 V

µA

150

2700

5500

λ_paste= 5,2 W/mK

(PTM)

Thermal resistance junction to sink⁽²⁾

0,84

K/W

R_th(j-s)

Copyright Vincotech

10

15 Dec. 2022 / Revision 4

B0-SL10NIB600S702-PA29F78Z

B0-SL10NIC600S702-PA39F78Z

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Boost D. Protection Diode

Static

25

2,1

2,64

2,44

2,36

2,8⁽¹⁾

V_F

I_R

Forward voltage

100

125

150

V

Reverse leakage current

Thermal

V_r= 950 V

25

4

µA

λ_paste= 5,2 W/mK

(PTM)

Thermal resistance junction to sink⁽²⁾

0,59

K/W

R_th(j-s)

Thermistor

Static

R

Δ_R/R

P

Rated resistance

Deviation of R100

Power dissipation

Power dissipation constant

B-value

25

22

kΩ

%

R₁₀₀= 1484 Ω

100

25

-5

5

130

1,5

mW

mW/K

K

d

25

B_(25/50)

Tol. ±1 %

3962

4000

B_(25/100)

B-value

K

Vincotech Thermistor Reference

I

(1)

Value at chip level

(2)

Only valid with pre-applied Vincotech thermal interface material.

Copyright Vincotech

11

15 Dec. 2022 / Revision 4

B0-SL10NIB600S702-PA29F78Z

B0-SL10NIC600S702-PA39F78Z

datasheet

Buck Switch Characteristics

figure 1.

IGBT

figure 2.

IGBT

Typical output characteristics

I_C= f(V_CE

)

I_C= f(V_CE)

1250

V_GE

:

7 V

8 V

9 V

1000

750

500

250

0

1000

750

500

250

0

10 V

11 V

12 V

13 V

14 V

15 V

16 V

17 V

0,0

0,5

1,0

1,5

2,0

2,5

3,0

3,5

0,0

0,5

1,0

1,5

2,0

2,5

3,0

3,5

V

_CE(V)

V_CE(V)

t_p

=

t_p

=

250

15

μs

V

250

150

μs

°C

25 °C

125 °C

150 °C

V_GE

T_j=

T_j:

V_GEfrom 7 V to 17 V in steps of 1 V

figure 3.

IGBT

figure 4.

IGBT

Typical transfer characteristics

Transient thermal impedance as a function of pulse width

I_C= f(V_GE

)

Z_th(j-s)= f(t_p)

0

200

10

-1

10

150

100

50

-2

10

-3

10

0,5

0,2

0,1

0,05

0,02

0,01

0,005

0

-4

10

-5

10

0

10

-5

-4

10

-3

10

-2

10

-1

10

0

10

1

10

2

0

1

2

3

4

5

6

7

8

10

t_p(s)

V

_GE(V)

t_p

=

250

24

μs

V

D =

t_p/ T

0,11

25 °C

125 °C

150 °C

V_CE

R_th(j-s)=

T_j:

K/W

IGBT thermal model values

R (K/W)

τ (s)

1,72E-02

2,61E-02

3,34E-02

2,60E-02

7,27E-03

3,12E+00

9,92E-01

1,78E-01

2,52E-02

1,28E-03

Copyright Vincotech

12

15 Dec. 2022 / Revision 4

B0-SL10NIB600S702-PA29F78Z

B0-SL10NIC600S702-PA39F78Z

datasheet

Buck Switch Characteristics

figure 5.

IGBT

Safe operating area

I_C= f(V_CE

)

10000

1000

100

10

1

0,1

0,01

1

10

100

1000

10000

V

_CE(V)

D =

single pulse

T_s=

80

15

°C

V

V_GE

=

T_j=

T_jmax

Copyright Vincotech

13

15 Dec. 2022 / Revision 4

B0-SL10NIB600S702-PA29F78Z

B0-SL10NIC600S702-PA39F78Z

datasheet

Buck Diode Characteristics

figure 6.

FWD

figure 7.

FWD

Typical forward characteristics

Transient thermal impedance as a function of pulse width

I_F= f(V_F)

Z_th(j-s)= f(t_p)

0

400

300

200

100

0

10

-1

10

-2

10

0,5

0,2

0,1

0,05

0,02

0,01

0,005

0

-3

10

-4

10

-5

-4

10

-3

10

-2

10

-1

10

0

1

2

0

1

2

3

4

5

6

10

t_p(s)

V_F(V)

t_p

=

250

μs

D =

t_p/ T

0,22

25 °C

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

FWD thermal model values

R (K/W)

τ (s)

3,69E-02

5,12E-02

7,45E-02

3,95E-02

1,79E-02

3,31E+00

6,84E-01

6,90E-02

1,11E-02

1,70E-03

Copyright Vincotech

14

15 Dec. 2022 / Revision 4

B0-SL10NIB600S702-PA29F78Z

B0-SL10NIC600S702-PA39F78Z

datasheet

Buck Sw. Protection Diode Characteristics

figure 8.

FWD

figure 9.

FWD

Typical forward characteristics

Transient thermal impedance as a function of pulse width

I_F= f(V_F)

Z_th(j-s)= f(t_p)

0

300

250

200

150

100

50

10

-1

10

-2

10

0,5

0,2

0,1

0,05

0,02

0,01

0,005

0

-3

10

-4

10

0

10

-5

-4

10

-3

10

-2

10

-1

10

0

1

2

0

1

2

3

4

5

10

t_p(s)

V_F(V)

t_p

=

250

μs

D =

t_p/ T

0,594

25 °C

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

FWD thermal model values

R (K/W)

τ (s)

5,02E-02

7,95E-02

2,28E-01

1,50E-01

8,75E-02

2,46E+00

4,43E-01

5,90E-02

1,50E-02

1,73E-03

Copyright Vincotech

15

15 Dec. 2022 / Revision 4

B0-SL10NIB600S702-PA29F78Z

B0-SL10NIC600S702-PA39F78Z

datasheet

Boost Switch Characteristics

figure 10.

IGBT

figure 11.

IGBT

Typical output characteristics

I_C= f(V_CE

)

I_C= f(V_CE)

1750

V_GE

:

7 V

8 V

9 V

1500

1250

1000

750

500

250

0

1500

1250

1000

750

500

250

0

10 V

11 V

12 V

13 V

14 V

15 V

16 V

17 V

0

1

2

3

4

5

6

0

1

2

3

4

5

6

V

_CE(V)

V_CE(V)

t_p

V_GE

=

t_p

=

250

15

μs

V

250

150

μs

°C

25 °C

125 °C

150 °C

T_j=

T_j:

V_GEfrom 7 V to 17 V in steps of 1 V

figure 12.

IGBT

figure 13.

IGBT

Typical transfer characteristics

Transient thermal impedance as a function of pulse width

I_C= f(V_GE

)

Z_th(j-s)= f(t_p)

-1

600

10

500

400

300

200

100

0

-2

10

-3

10

0,5

0,2

0,1

0,05

0,02

0,01

0,005

0

-4

10

-5

10

-5

-4

10

-3

10

-2

10

-1

10

0

10

1

10

2

0,0

2,5

5,0

7,5

10,0

12,5

10

t_p(s)

V

_GE(V)

t_p

=

250

10

μs

V

D =

t_p/ T

0,097

25 °C

125 °C

150 °C

V_CE

=

R_th(j-s)=

T_j:

K/W

IGBT thermal model values

R (K/W)

τ (s)

1,01E-02

2,69E-02

3,87E-02

1,54E-02

5,74E-03

3,90E+00

9,57E-01

1,31E-01

2,17E-02

9,87E-04

Copyright Vincotech

16

15 Dec. 2022 / Revision 4

B0-SL10NIB600S702-PA29F78Z

B0-SL10NIC600S702-PA39F78Z

datasheet

Boost Switch Characteristics

figure 14.

IGBT

figure 15.

IGBT

Safe operating area

Gate voltage vs gate charge

I_C= f(V_CE

)

V_GE= f(Q_g)

10000

1000

100

10

17,5

15,0

12,5

10,0

7,5

10µs

100µs

1ms

10ms

100ms

DC

1

5,0

0,1

2,5

0,01

0,0

1

10

100

1000

10000

0

500

1000 1500 2000 2500 3000 3500 4000

V

_CE(V)

Q_g(μC)

D =

I_C

=

single pulse

200

25

A

T_s=

T_j=

80

15

°C

V

°C

V_GE

=

T_j=

T_jmax

Copyright Vincotech

17

15 Dec. 2022 / Revision 4

B0-SL10NIB600S702-PA29F78Z

B0-SL10NIC600S702-PA39F78Z

datasheet

Boost Diode Characteristics

figure 16.

FWD

figure 17.

FWD

Typical forward characteristics

Transient thermal impedance as a function of pulse width

I_F= f(V_F)

Z_th(j-s)= f(t_p)

0

800

600

400

200

0

10

-1

10

-2

10

0,5

0,2

0,1

0,05

0,02

0,01

0,005

0

-3

10

-4

10

-5

-4

10

-3

10

-2

10

-1

10

0

1

2

0

1

2

3

4

5

10

t_p(s)

V_F(V)

t_p

=

250

μs

D =

t_p/ T

0,23

25 °C

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

FWD thermal model values

R (K/W)

τ (s)

2,56E-02

4,35E-02

9,09E-02

4,34E-02

2,66E-02

2,90E+00

5,53E-01

6,81E-02

1,43E-02

1,41E-03

Copyright Vincotech

18

15 Dec. 2022 / Revision 4

B0-SL10NIB600S702-PA29F78Z

B0-SL10NIC600S702-PA39F78Z

datasheet

Boost Sw. Inv. Diode Characteristics

figure 18.

FWD

figure 19.

FWD

Typical forward characteristics

Transient thermal impedance as a function of pulse width

I_F= f(V_F)

Z_th(j-s)= f(t_p)

0

600

500

400

300

200

100

0

10

-1

10

-2

10

0,5

0,2

0,1

0,05

0,02

0,01

0,005

0

-3

10

-4

10

-5

-4

10

-3

10

-2

10

-1

10

0

1

2

0,0

0,5

1,0

1,5

2,0

2,5

3,0

3,5

10

t_p(s)

V_F(V)

t_p

=

250

μs

D =

t_p/ T

0,244

25 °C

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

FWD thermal model values

R (K/W)

τ (s)

3,51E-02

5,14E-02

9,82E-02

3,42E-02

2,47E-02

2,48E+00

4,38E-01

5,01E-02

7,68E-03

6,90E-04

Copyright Vincotech

19

15 Dec. 2022 / Revision 4

B0-SL10NIB600S702-PA29F78Z

B0-SL10NIC600S702-PA39F78Z

datasheet

Boost Sw. Protection Diode Characteristics

figure 20.

FWD

figure 21.

FWD

Typical forward characteristics

Transient thermal impedance as a function of pulse width

I_F= f(V_F)

Z_th(j-s)= f(t_p)

0

100

75

50

25

0

10

-1

10

-2

10

0,5

0,2

0,1

0,05

0,02

0,01

0,005

0

-3

10

-5

-4

10

-3

10

-2

10

-1

10

0

1

2

0

1

2

3

4

5

6

10

t_p(s)

V_F(V)

t_p

=

250

μs

D =

t_p/ T

0,843

25 °C

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

FWD thermal model values

R (K/W)

τ (s)

9,03E-02

1,29E-01

3,56E-01

1,83E-01

8,48E-02

1,79E+00

1,94E-01

2,98E-02

3,56E-03

6,09E-04

Copyright Vincotech

20

15 Dec. 2022 / Revision 4

B0-SL10NIB600S702-PA29F78Z

B0-SL10NIC600S702-PA39F78Z

datasheet

Boost D. Protection Diode Characteristics

figure 22.

FWD

figure 23.

FWD

Typical forward characteristics

Transient thermal impedance as a function of pulse width

I_F= f(V_F)

Z_th(j-s)= f(t_p)

0

300

250

200

150

100

50

10

-1

10

-2

10

0,5

0,2

0,1

0,05

0,02

0,01

0,005

0

-3

10

-4

10

0

10

-5

-4

10

-3

10

-2

10

-1

10

0

1

2

0

1

2

3

4

5

10

t_p(s)

V_F(V)

t_p

=

250

μs

D =

t_p/ T

0,594

25 °C

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

FWD thermal model values

R (K/W)

τ (s)

5,02E-02

7,95E-02

2,28E-01

1,50E-01

8,75E-02

2,46E+00

4,43E-01

5,90E-02

1,50E-02

1,73E-03

Copyright Vincotech

21

15 Dec. 2022 / Revision 4

B0-SL10NIB600S702-PA29F78Z

B0-SL10NIC600S702-PA39F78Z

datasheet

Thermistor Characteristics

figure 24.

Thermistor

Typical NTC characteristic as function of temperature

R_T= f(T)

25000

20000

15000

10000

5000

0

20

40

60

80

100

120

140

T(°C)

Copyright Vincotech

22

15 Dec. 2022 / Revision 4

B0-SL10NIB600S702-PA29F78Z

B0-SL10NIC600S702-PA39F78Z

datasheet

Buck Switching Characteristics

figure 25.

IGBT

figure 26.

IGBT

Typical switching energy losses as a function of collector current

Typical switching energy losses as a function of IGBT turn on gate resistor

E = f(I_C)

E = f(R_g)

40

35

30

25

20

15

10

5

35

E_off

E_on

30

25

20

15

10

5

E_off

E_on

E_off

0

0,0

0

100

200

300

400

500

600

700

2,5

5,0

7,5

10,0

12,5

15,0

17,5

I_C(A)

R_g(Ω)

With an inductive load at

25 °C

V_CE

=

V_CE

V_GE

I_C

=

600

±15

2

V

Ω

125 °C

150 °C

600

±15

355

V

125 °C

150 °C

T_j:

V_GE

V

A

R_gon

R_goff

4

figure 27.

FWD

figure 28.

FWD

Typical reverse recovered energy loss as a function of collector current

Typical reverse recovered energy loss as a function of IGBT turn on gate resistor

E_rec= f(I_C)

E_rec= f(R_g)

0,5

0,4

0,3

0,2

0,1

0,0

0,40

0,35

0,30

0,25

0,20

0,15

0,10

0,05

0,00

E_rec

0

100

200

300

400

500

600

700

0,0

2,5

5,0

7,5

10,0

12,5

15,0

17,5

I_C(A)

R_g(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

600

±15

2

V

Ω

125 °C

150 °C

600

±15

355

V

125 °C

150 °C

T_j:

V

A

Copyright Vincotech

23

15 Dec. 2022 / Revision 4

B0-SL10NIB600S702-PA29F78Z

B0-SL10NIC600S702-PA39F78Z

datasheet

Buck Switching Characteristics

figure 29.

IGBT

figure 30.

IGBT

Typical switching times as a function of collector current

Typical switching times as a function of IGBT turn on gate resistor

t = f(I_C)

t = f(R_g)

0

10

1

10

t_d(off)

t_d(on)

t_d(off)

-1

10

0

10

t_d(on)

t_r

t_f

-2

10

-1

10

t_r

t_f

-3

10

-2

10

0,0

0

100

200

300

400

500

600

700

I_C(A)

2,5

5,0

7,5

10,0

12,5

15,0

17,5

R_g(Ω)

With an inductive load at

T_j=

150

600

±15

2

°C

150

600

±15

355

°C

V_CE

=

V_CE

=

V

Ω

V

A

V_GE

R_gon

R_goff

V_GE

I_C

4

figure 31.

FWD

figure 32.

FWD

Typical reverse recovery time as a function of collector current

Typical reverse recovery time as a function of IGBT turn on gate resistor

t_rr= f(I_C)

t_rr= f(R_gon)

0,035

0,030

0,025

0,020

0,015

0,010

0,005

0,000

0,035

0,030

0,025

0,020

0,015

0,010

0,005

0,000

t_rr

0

100

200

300

400

500

600

700

0

1

2

3

4

5

6

7

8

9

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

600

±15

2

V

Ω

125 °C

150 °C

600

±15

355

V

A

125 °C

150 °C

T_j:

Copyright Vincotech

24

15 Dec. 2022 / Revision 4

B0-SL10NIB600S702-PA29F78Z

B0-SL10NIC600S702-PA39F78Z

datasheet

Buck Switching Characteristics

figure 33.

FWD

figure 34.

FWD

Typical recovered charge as a function of collector current

Typical recovered charge as a function of IGBT turn on gate resistor

Q_r= f(I_C)

Q_r= f(R_gon)

1,50

1,25

1,00

0,75

0,50

0,25

0,00

1,2

1,0

0,8

0,6

0,4

0,2

0,0

Q_r

0

100

200

300

400

500

600

700

0

1

2

3

4

5

6

7

8

9

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

600

±15

2

V

125 °C

150 °C

600

±15

355

V

A

125 °C

150 °C

T_j:

V

Ω

figure 35.

FWD

figure 36.

FWD

Typical peak reverse recovery current as a function of collector current

Typical peak reverse recovery current as a function of IGBT turn on gate resistor

I_RM= f(I_C)

I_RM= f(R_gon)

80

70

60

50

40

30

20

10

0

90

80

70

60

50

40

30

20

10

0

I_RM

0

100

200

300

400

500

600

700

0

1

2

3

4

5

6

7

8

9

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

600

±15

2

V

Ω

125 °C

150 °C

600

±15

355

V

A

125 °C

150 °C

T_j:

Copyright Vincotech

25

15 Dec. 2022 / Revision 4

B0-SL10NIB600S702-PA29F78Z

B0-SL10NIC600S702-PA39F78Z

datasheet

Buck Switching Characteristics

figure 37.

FWD

figure 38.

FWD

Typical rate of fall of forward and reverse recovery current as a function of collector current

Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor

di_F/dt, di_rr/dt = f(I_C)

di_F/dt, di_rr/dt = f(R_gon)

15000

12500

10000

7500

5000

2500

0

di_F/dt ‒ ‒ ‒ ‒ ‒

di_rr/dt ──────

12500

10000

7500

5000

2500

0

100

200

300

400

500

600

700

I_C(A)

0

1

2

3

4

5

6

7

8

9

R_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

600

±15

2

V

Ω

125 °C

150 °C

600

±15

355

V

A

125 °C

150 °C

T_j:

figure 39.

IGBT

Reverse bias safe operating area

I_C= f(V_CE

)

1500

I_{C MAX}

1250

1000

750

500

250

0

200

400

600

800

1000

1200

V

_CE(V)

T_j=

At

150

°C

R_gon

R_goff

=

2

4

Ω

Copyright Vincotech

26

15 Dec. 2022 / Revision 4

B0-SL10NIB600S702-PA29F78Z

B0-SL10NIC600S702-PA39F78Z

datasheet

Boost Switching Characteristics

figure 40.

IGBT

figure 41.

IGBT

Typical switching energy losses as a function of collector current

Typical switching energy losses as a function of IGBT turn on gate resistor

E = f(I_C)

E = f(R_g)

400

350

300

250

200

150

100

50

175

150

125

100

75

E_on

E_off

50

E_off

25

0

0,0

0

250

500

750

1000

1250

0,5

1,0

1,5

2,0

2,5

3,0

3,5

4,0

4,5

I_C(A)

R_g(Ω)

With an inductive load at

25 °C

V_CE

=

V_CE

V_GE

I_C

=

600

±15

2

V

Ω

125 °C

150 °C

600

±15

600

V

A

125 °C

150 °C

T_j:

V_GE

R_gon

R_goff

2

figure 42.

FWD

figure 43.

FWD

Typical reverse recovered energy loss as a function of collector current

Typical reverse recovered energy loss as a function of IGBT turn on gate resistor

E_rec= f(I_C)

E_rec= f(R_g)

6

5

4

3

2

1

0

9

8

7

6

5

4

3

2

1

0

E_rec

0

250

500

750

1000

1250

I_C(A)

0,0

0,5

1,0

1,5

2,0

2,5

3,0

3,5

4,0

4,5

R_g(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

600

±15

2

V

Ω

125 °C

150 °C

600

±15

600

V

A

125 °C

150 °C

T_j:

Copyright Vincotech

27

15 Dec. 2022 / Revision 4

B0-SL10NIB600S702-PA29F78Z

B0-SL10NIC600S702-PA39F78Z

datasheet

Boost Switching Characteristics

figure 44.

IGBT

figure 45.

IGBT

Typical switching times as a function of collector current

Typical switching times as a function of IGBT turn on gate resistor

t = f(I_C)

t = f(R_g)

t_d(on)

t_d(off)

0

10

0

10

t_d(on)

t_d(off)

t_r

-1

10

-1

t_f

10

t_f

-2

10

-2

0,0

10

0

250

500

750

1000

1250

0,5

1,0

1,5

2,0

2,5

3,0

3,5

4,0

4,5

R_g(Ω)

I_C(A)

With an inductive load at

T_j=

150

600

±15

2

°C

V

150

600

±15

600

°C

V

V_CE

=

V_CE

=

V_GE

R_gon

R_goff

V_GE

I_C

V

Ω

A

2

figure 46.

FWD

figure 47.

FWD

Typical reverse recovery time as a function of collector current

Typical reverse recovery time as a function of IGBT turn on gate resistor

t_rr= f(I_C)

t_rr= f(R_gon)

0,45

0,40

0,35

0,30

0,25

0,20

0,15

0,10

0,05

0,00

0,40

0,35

0,30

0,25

0,20

0,15

0,10

0,05

0,00

t_rr

0

250

500

750

1000

1250

0,0

0,5

1,0

1,5

2,0

2,5

3,0

3,5

4,0

4,5

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

600

±15

2

V

Ω

125 °C

150 °C

600

±15

600

V

A

125 °C

150 °C

T_j:

Copyright Vincotech

28

15 Dec. 2022 / Revision 4

B0-SL10NIB600S702-PA29F78Z

B0-SL10NIC600S702-PA39F78Z

datasheet

Boost Switching Characteristics

figure 48.

FWD

figure 49.

FWD

Typical recovered charge as a function of collector current

Typical recovered charge as a function of IGBT turn on gate resistor

Q_r= f(I_C)

Q_r= f(R_gon)

20,0

17,5

15,0

12,5

10,0

7,5

30

25

20

15

10

5

Q_r

5,0

Q_r

2,5

0,0

0

0,0

0

250

500

750

1000

1250

0,5

1,0

1,5

2,0

2,5

3,0

3,5

4,0

4,5

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

600

±15

2

V

Ω

125 °C

150 °C

600

±15

600

V

A

125 °C

150 °C

T_j:

figure 50.

FWD

figure 51.

FWD

Typical peak reverse recovery current as a function of collector current

Typical peak reverse recovery current as a function of IGBT turn on gate resistor

I_RM= f(I_C)

I_RM= f(R_gon)

175

150

125

100

75

225

200

175

150

125

100

75

I_RM

50

I_RM

50

I_RM

25

0

0,0

0

250

500

750

1000

1250

0,5

1,0

1,5

2,0

2,5

3,0

3,5

4,0

4,5

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

600

±15

2

V

Ω

125 °C

150 °C

600

±15

600

V

A

125 °C

150 °C

T_j:

Copyright Vincotech

29

15 Dec. 2022 / Revision 4

B0-SL10NIB600S702-PA29F78Z

B0-SL10NIC600S702-PA39F78Z

datasheet

Boost Switching Characteristics

figure 52.

FWD

figure 53.

FWD

Typical rate of fall of forward and reverse recovery current as a function of collector current

Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor

di_F/dt, di_rr/dt = f(I_C)

di_F/dt, di_rr/dt = f(R_gon)

6000

5000

4000

3000

2000

1000

0

di_F/dt ‒ ‒ ‒ ‒ ‒

di_rr/dt ──────

5000

4000

3000

2000

1000

0

250

500

750

1000

1250

I_C(A)

0,0

0,5

1,0

1,5

2,0

2,5

3,0

3,5

4,0

4,5

R_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

600

±15

2

V

Ω

125 °C

150 °C

600

±15

600

V

A

125 °C

150 °C

T_j:

figure 54.

IGBT

Reverse bias safe operating area

I_C= f(V_CE

)

1500

I_{C MAX}

1250

1000

750

500

250

0

250

500

750

1000

1250

1500

V

_CE(V)

T_j=

At

150

°C

Ω

R_gon

R_goff

=

2

Ω

Copyright Vincotech

30

15 Dec. 2022 / Revision 4

B0-SL10NIB600S702-PA29F78Z

B0-SL10NIC600S702-PA39F78Z

datasheet

Switching Definitions

figure 55.

IGBT

figure 56.

IGBT

Turn-off Switching Waveforms & definition of t_doff, t_Eoff(t_tEoff= integrating time for E_off

)

Turn-on Switching Waveforms & definition of t_don, t_Eon(t_Eon= integrating time for E_on)

t_doff

%

V_{GE 90%}

V_{CE 90%}

I_C

V_GE

V_CE

t_don

t_Eoff

I_{C 1%}

V_{CE 3%}

V_CE

I_{C 10%}

V_{GE 10%}

t_Eon

t (µs)

figure 57.

IGBT

figure 58.

IGBT

Turn-off Switching Waveforms & definition of t_f

Turn-on Switching Waveforms & definition of t_r

fitted

%

I_C

I_{C 90%}

I_{C 60%}

V_CE

I_{C 90%}

I_{C 40%}

t_r

I_C10%

V_CE

C 10%

t_f

t (µs)

Copyright Vincotech

31

15 Dec. 2022 / Revision 4

B0-SL10NIB600S702-PA29F78Z

B0-SL10NIC600S702-PA39F78Z

datasheet

Switching Definitions

figure 59.

FWD

figure 60.

FWD

Turn-off Switching Waveforms & definition of t_rr

Turn-on Switching Waveforms & definition of t_Qr(t_Qr= integrating time for Q_r)

%

Q_r

t_rr

t_Qr

I_F

fitted

RRM 10%

V_F

RRM 90%

RRM 100%

t (µs)

Copyright Vincotech

32

15 Dec. 2022 / Revision 4

B0-SL10NIB600S702-PA29F78Z

B0-SL10NIC600S702-PA39F78Z

datasheet

Ordering Code

Marking

Version

Ordering Code

Without thermal paste

With thermal paste (5,2 W/mK, PTM6000HV)

B0-SL10NIB600S702-PA29F78Z

B0-SL10NIB600S702-PA29F78Z-/7/

Name

Date code

UL & VIN

Lot

Serial

Text

NN-NNNNNNNNNNNNNN-

TTTTTTVV

WWYY

UL VIN

LLLLL

SSSS

Type&Ver

Lot number

Serial

Date code

Datamatrix

TTTTTTTVV

LLLLL

SSSS

WWYY

B0-SL10NIB600S702-PA29F78Z

Outline

Pin table [mm]

1

2

3

4

5

6

7

8

X

6,2

0

0,3

3

5,7

8,4

0,3

3

5,7

0,3

3

5,7

14,5

17,2

19,9

22,6

31,8

34,5

37,2

39,9

48,7

51,4

40,6

37,9

35,2

40,6

37,9

35,2

40,6

37,9

35,2

32,5

12,4

16,1

32,95

36,65

21,05

51,4

Y

49,4

5,4

2,7

0

Function

Therm1

Therm2

DC+

GND

DC-

Ph

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

31

32

33

34

35

36

37

38

39

40

41

42

43

0

2,7

5,4

8,1

10,8

13,5

43,7

46,4

49,1

26,95

27,3

49,1

33,6

Ph

G11

S11

G13

S13

TM1

TM2

Copyright Vincotech

33

15 Dec. 2022 / Revision 4

B0-SL10NIB600S702-PA29F78Z

B0-SL10NIC600S702-PA39F78Z

datasheet

B0-SL10NIB600S702-PA29F78Z

Pinout

DC+

3-12

T11

D41

G11

38

S11

39

TM1

42

T13

D43

D11

D45

G13

40

GND

13-20

S13

41

Ph

28-37

D15

TM2

43

D13

Rt

Therm1

1

Therm2

2

DC-

21-27

Identification

Component

Voltage

Current

Function

Comment

ID

T11

D11

D41

T13

D13

D15

D43

D45

Rt

IGBT

FWD

IGBT

FWD

950 V

1200 V

950 V

1200 V

950 V

1200 V

950 V

600 A

160 A

100 A

600 A

300 A

225 A

35 A

Buck Switch

Buck Diode

Buck Sw. Protection Diode

Boost Switch

Boost Diode

Boost Sw. Inv. Diode

Boost Sw. Protection Diode

Boost D. Protection Diode

Thermistor

100 A

Thermistor

Copyright Vincotech

34

15 Dec. 2022 / Revision 4

B0-SL10NIB600S702-PA29F78Z

B0-SL10NIC600S702-PA39F78Z

datasheet

Ordering Code

Marking

Version

Ordering Code

Without thermal paste

With thermal paste (5,2 W/mK, PTM6000HV)

B0-SL10NIC600S702-PA39F78Z

B0-SL10NIC600S702-PA39F78Z-/7/

Name

Date code

UL & VIN

Lot

Serial

Text

NN-NNNNNNNNNNNNNN-

TTTTTTVV

WWYY

UL VIN

LLLLL

SSSS

Type&Ver

Lot number

Serial

Date code

Datamatrix

TTTTTTTVV

LLLLL

SSSS

WWYY

B0-SL10NIC600S702-PA39F78Z

Outline

Pin table [mm]

1

2

3

4

5

6

7

8

X

Y

Function

Therm1

Therm2

Ph

51,45

46

49,45

49,1

46,4

25

22,3

19,6

16,9

14,2

11,5

8,8

0

6,45

9,15

11,85

14,55

17,25

19,95

22,65

25,35

26,95

29,35

33,6

49,1

21,8

19,1

16,4

13,7

11

21,8

19,1

16,4

13,7

11

0

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

31

32

33

34

35

36

37

38

39

40

41

42

43

Ph

DC+

GND

DC-

G14

S14

G12

S12

TM3

TM4

2,6

5,2

7,8

39

41,6

44,2

46,8

51,1

48,4

51,1

48,4

51,1

28,6

32,3

46,05

49,75

7,35

32,3

Copyright Vincotech

35

15 Dec. 2022 / Revision 4

B0-SL10NIB600S702-PA29F78Z

B0-SL10NIC600S702-PA39F78Z

datasheet

B0-SL10NIC600S702-PA39F78Z

Pinout

DC+

13-19

D14

TM3

42

D16

D46

D12

Ph

3-12

GND

20-27

T14

D44

G14

38

S14

39

TM4

43

T12

D42

G12

40

Rt

S12

41

Therm1

1

Therm2

2

DC-

28-37

Identification

Component

Voltage

Current

Function

Comment

ID

T12

D12

D42

T14

D14

D16

D44

D46

Rt

IGBT

FWD

IGBT

FWD

950 V

1200 V

950 V

1200 V

950 V

1200 V

950 V

600 A

160 A

100 A

600 A

300 A

225 A

35 A

Buck Switch

Buck Diode

Buck Sw. Protection Diode

Boost Switch

Boost Diode

Boost Sw. Inv. Diode

Boost Sw. Protection Diode

Boost D. Protection Diode

Thermistor

100 A

Thermistor

Copyright Vincotech

36

15 Dec. 2022 / Revision 4

B0-SL10NIB600S702-PA29F78Z

B0-SL10NIC600S702-PA39F78Z

datasheet

Packaging instruction

Handling instruction

Standard packaging quantity (SPQ) 45

>SPQ

Standard

<SPQ

Sample

Handling instructions for flow S3 packages see vincotech.com website.

Package data

Package data for flow S3 packages see vincotech.com website.

Vincotech thermistor reference

See Vincotech thermistor reference table at vincotech.com website.

UL recognition and file number

This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.

Document No.:

Date:

Modification:

Pages

B0-SL10NIx600S702-PAx9F78Z-D4-14

15 Dec. 2022

Frame, Pin table and Pinout modification

DISCLAIMER

The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to

reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations

that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,

function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said

information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons

or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine

the suitability of the information and the product for reader’s intended use.

LIFE SUPPORT POLICY

Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval

of Vincotech.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or

sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be

reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause

the failure of the life support device or system, or to affect its safety or effectiveness.

Copyright Vincotech

37

15 Dec. 2022 / Revision 4


型号：	-SL10NIB600S702-PA29F78Z
厂家：	VINCOTECH
描述：	Low collector emitter saturation voltage;High speed and smooth switching
文件：	总37页 (文件大小：5389K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

-SL10NIB600S702-PA29F78Z [VINCOTECH]

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