-SP103BB100S764-PB80L98T [VINCOTECH]
Low collector emitter saturation voltage;High speed and smooth switching;
| 型号： | -SP103BB100S764-PB80L98T |
| 厂家： | 
VINCOTECH |
| 描述： | Low collector emitter saturation voltage;High speed and smooth switching |
| 文件： | 总35页 (文件大小：9011K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
B0-SP103BB100S764-PB80L98T
datasheet
flowBOOST S3 symmetric triple
950 V / 100 A
Topology features
flow S3 12 mm housing
● Kelvin Emitter for improved switching performance
● Temperature sensor
● Triple Flying Cap Booster
● Auxiliary diodes for FC pre-charge (patent pending)
Component features
● Low collector emitter saturation voltage
● High speed and smooth switching
Housing features
● Base isolation: Al2O3
● CTI600 housing material
● Compact, baseplate-less housing
● VINcoPress Technology
Schematic
● Thermo-mechanical push-and-pull force relief
● Press-fit pin
● Reliable cold welding connection
Target applications
● Energy Storage Systems
● Solar Inverters
Types
● B0-SP103BB100S764-PB80L98T
Copyright Vincotech
1
29 Mar. 2023 / Revision 2
B0-SP103BB100S764-PB80L98T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inner Boost Switch
VCES
Collector-emitter voltage
950
77
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
200
145
±20
175
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
Inner Boost Diode
VRRM
Peak repetitive reverse voltage
1200
74
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
429
918
158
175
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
Inner Boost Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
1200
49
V
A
IF
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
100
90
A
Ptot
W
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
2
29 Mar. 2023 / Revision 2
B0-SP103BB100S764-PB80L98T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Outer Boost Switch
VCES
Collector-emitter voltage
950
77
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
200
145
±20
175
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
Outer Boost Diode
VRRM
Peak repetitive reverse voltage
1200
74
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
429
918
158
175
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
Outer Boost Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
1200
49
V
A
IF
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
100
90
A
Ptot
W
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
3
29 Mar. 2023 / Revision 2
B0-SP103BB100S764-PB80L98T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Aux Diode H
VRRM
Peak repetitive reverse voltage
1200
32
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
170
145
73
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
175
Aux Diode L
VRRM
Peak repetitive reverse voltage
1200
32
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
170
145
73
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
175
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Creepage distance
Clearance
Visol
DC Test Voltage*
tp = 2 s
6000
10,12
8,26
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 600
Copyright Vincotech
4
29 Mar. 2023 / Revision 2
B0-SP103BB100S764-PB80L98T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inner Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,00167 25
25
4,35
5,1
5,85
V
V
1,67
1,94
2,01
2,35(1)
VCEsat
Collector-emitter saturation voltage
15
100
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
950
0
25
2
µA
nA
Ω
20
25
100
1,5
6500
139
20
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 100 kHz
0
25
25
25
Reverse transfer capacitance
Gate charge
±15
0
230
Thermal
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(2)
Dynamic
0,66
K/W
Rth(j-s)
25
93,17
95,19
95,8
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
16,58
17,99
18,48
94,61
118,3
123,99
25,2
tr
125
150
25
Rgon = 4 Ω
Rgoff = 4 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
600
100
tf
125
150
25
53,77
62,81
2,28
ns
QrFWD=0,252 µC
QrFWD=0,285 µC
QrFWD=0,294 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
2,3
mWs
mWs
2,3
2,46
Eoff
125
150
3,93
4,34
Copyright Vincotech
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29 Mar. 2023 / Revision 2
B0-SP103BB100S764-PB80L98T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inner Boost Diode
Static
25
1,44
1,71
1,81
0,6
1,6(1)
240
VF
IR
Forward voltage
60
125
150
25
V
Reverse leakage current
Thermal
Vr = 1200 V
µA
150
42
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(2)
Dynamic
0,6
K/W
Rth(j-s)
25
23,03
26,31
27,3
IRM
Peak recovery current
125
150
25
A
18,02
17,77
17,74
0,252
0,285
0,294
0,06
trr
Reverse recovery time
125
150
25
ns
di/dt=3421 A/µs
di/dt=3846 A/µs
di/dt=4494 A/µs
Qr
Recovered charge
±15
600
100
125
150
25
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
0,075
0,079
3097,66
3970,72
4415,47
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
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29 Mar. 2023 / Revision 2
B0-SP103BB100S764-PB80L98T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Inner Boost Sw. Protection Diode
Static
25
1,66
1,78
1,79
2,1(1)
VF
IR
Forward voltage
50
125
150
V
Reverse leakage current
Thermal
Vr = 1200 V
25
40
µA
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(2)
1,06
K/W
Rth(j-s)
Copyright Vincotech
7
29 Mar. 2023 / Revision 2
B0-SP103BB100S764-PB80L98T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Outer Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,00167 25
25
4,35
5,1
5,85
V
V
1,67
1,94
2,01
2,35(1)
VCEsat
Collector-emitter saturation voltage
15
100
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
950
0
25
2
µA
nA
Ω
20
25
100
1,5
6500
139
20
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 100 kHz
0
25
25
25
Reverse transfer capacitance
Gate charge
±15
0
230
Thermal
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(2)
Dynamic
0,66
K/W
Rth(j-s)
25
93,7
95,36
96,03
15
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
16,85
17,07
95,5
Rgon = 4 Ω
Rgoff = 4 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
117,76
123,5
31,33
50,22
58,66
1,59
ns
±15
600
100
tf
125
150
25
ns
QrFWD=0,339 µC
QrFWD=0,353 µC
QrFWD=0,36 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
1,75
mWs
mWs
1,75
2,52
Eoff
125
150
3,89
4,28
Copyright Vincotech
8
29 Mar. 2023 / Revision 2
B0-SP103BB100S764-PB80L98T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Outer Boost Diode
Static
25
1,44
1,71
1,81
0,6
1,6(1)
240
VF
IR
Forward voltage
60
125
150
25
V
Reverse leakage current
Thermal
Vr = 1200 V
µA
150
42
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(2)
Dynamic
0,6
K/W
Rth(j-s)
25
33,56
34,26
34,56
16,39
16,77
16,99
0,339
0,353
0,36
IRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=3849 A/µs
di/dt=4417 A/µs
di/dt=4684 A/µs
Qr
Recovered charge
±15
600
100
125
150
25
μC
0,123
0,134
0,138
5162,72
5159,65
5231,68
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
9
29 Mar. 2023 / Revision 2
B0-SP103BB100S764-PB80L98T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Outer Boost Sw. Protection Diode
Static
25
1,66
1,78
1,79
2,1(1)
VF
IR
Forward voltage
50
125
150
V
Reverse leakage current
Thermal
Vr = 1200 V
25
40
µA
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(2)
1,06
K/W
Rth(j-s)
Aux Diode H
Static
25
2,37
2,35
2,62(1)
2,62(1)
60
VF
IR
Forward voltage
35
V
150
25
Reverse leakage current
Vr = 1200 V
µA
150
2700
5500
Thermal
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(2)
1,31
K/W
Rth(j-s)
Aux Diode L
Static
25
2,37
2,35
2,62(1)
2,62(1)
60
VF
IR
Forward voltage
35
V
150
25
Reverse leakage current
Vr = 1200 V
µA
150
2700
5500
Thermal
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(2)
1,31
K/W
Rth(j-s)
Copyright Vincotech
10
29 Mar. 2023 / Revision 2
B0-SP103BB100S764-PB80L98T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
25
-5
5
130
1,5
mW
mW/K
K
d
25
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
11
29 Mar. 2023 / Revision 2
B0-SP103BB100S764-PB80L98T
datasheet
Inner Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
300
300
VGE
:
7 V
8 V
250
200
150
100
50
250
200
150
100
50
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0,0
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
100
10
75
50
25
0
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
2
4
6
8
10
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,656
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
8,75E-02
3,39E-01
1,74E-01
2,53E-02
3,08E-02
1,42E+00
1,02E-01
2,16E-02
1,80E-03
2,55E-04
Copyright Vincotech
12
29 Mar. 2023 / Revision 2
B0-SP103BB100S764-PB80L98T
datasheet
Inner Boost Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
13
29 Mar. 2023 / Revision 2
B0-SP103BB100S764-PB80L98T
datasheet
Inner Boost Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
175
150
125
100
75
10
-1
10
-2
10
0,5
0,2
0,1
50
-3
10
0,05
0,02
0,01
0,005
0
25
-4
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,602
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
4,24E-02
1,01E-01
3,09E-01
9,91E-02
5,00E-02
3,27E+00
4,81E-01
5,52E-02
1,09E-02
1,66E-03
Copyright Vincotech
14
29 Mar. 2023 / Revision 2
B0-SP103BB100S764-PB80L98T
datasheet
Inner Boost Sw. Protection Diode Characteristics
figure 8.
FWD
figure 9.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
150
125
100
75
10
0
10
-1
10
50
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
25
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
3,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,061
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
6,96E-02
1,22E-01
6,12E-01
1,89E-01
6,78E-02
2,39E+00
3,75E-01
5,08E-02
8,26E-03
9,42E-04
Copyright Vincotech
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29 Mar. 2023 / Revision 2
B0-SP103BB100S764-PB80L98T
datasheet
Outer Boost Switch Characteristics
figure 10.
IGBT
figure 11.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
300
300
VGE
:
7 V
8 V
250
200
150
100
50
250
200
150
100
50
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0,0
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 12.
IGBT
figure 13.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
100
10
75
50
25
0
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
2
4
6
8
10
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,656
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
8,75E-02
3,39E-01
1,74E-01
2,53E-02
3,08E-02
1,42E+00
1,02E-01
2,16E-02
1,80E-03
2,55E-04
Copyright Vincotech
16
29 Mar. 2023 / Revision 2
B0-SP103BB100S764-PB80L98T
datasheet
Outer Boost Switch Characteristics
figure 14.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
17
29 Mar. 2023 / Revision 2
B0-SP103BB100S764-PB80L98T
datasheet
Outer Boost Diode Characteristics
figure 15.
FWD
figure 16.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
175
150
125
100
75
10
-1
10
-2
10
0,5
0,2
0,1
50
-3
10
0,05
0,02
0,01
0,005
0
25
-4
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,602
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
4,24E-02
1,01E-01
3,09E-01
9,91E-02
5,00E-02
3,27E+00
4,81E-01
5,52E-02
1,09E-02
1,66E-03
Copyright Vincotech
18
29 Mar. 2023 / Revision 2
B0-SP103BB100S764-PB80L98T
datasheet
Outer Boost Sw. Protection Diode Characteristics
figure 17.
FWD
figure 18.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
150
125
100
75
10
0
10
-1
10
50
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
25
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
3,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,061
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
6,96E-02
1,22E-01
6,12E-01
1,89E-01
6,78E-02
2,39E+00
3,75E-01
5,08E-02
8,26E-03
9,42E-04
Copyright Vincotech
19
29 Mar. 2023 / Revision 2
B0-SP103BB100S764-PB80L98T
datasheet
Aux Diode H Characteristics
figure 19.
FWD
figure 20.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
100
75
50
25
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,308
25 °C
Tj:
150 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
9,18E-02
2,59E-01
6,72E-01
1,98E-01
8,79E-02
1,91E+00
2,04E-01
4,91E-02
5,31E-03
6,11E-04
Copyright Vincotech
20
29 Mar. 2023 / Revision 2
B0-SP103BB100S764-PB80L98T
datasheet
Aux Diode L Characteristics
figure 21.
FWD
figure 22.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
100
75
50
25
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,308
25 °C
Tj:
150 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
9,18E-02
2,59E-01
6,72E-01
1,98E-01
8,79E-02
1,91E+00
2,04E-01
4,91E-02
5,31E-03
6,11E-04
Copyright Vincotech
21
29 Mar. 2023 / Revision 2
B0-SP103BB100S764-PB80L98T
datasheet
Thermistor Characteristics
figure 23.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
22
29 Mar. 2023 / Revision 2
B0-SP103BB100S764-PB80L98T
datasheet
Inner Boost Switching Characteristics
figure 24.
IGBT
figure 25.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
8
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
Eoff
Eon
Eoff
Eon
Eon
Eoff
Eon
Eon
Eon
Eoff
Eoff
Eoff
0
25
50
75
100
125
150
175
200
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
Ω
125 °C
150 °C
600
±15
100
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
4
figure 26.
FWD
figure 27.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
Erec
Erec
Erec
Erec
Erec
Erec
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
150 °C
600
±15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
23
29 Mar. 2023 / Revision 2
B0-SP103BB100S764-PB80L98T
datasheet
Inner Boost Switching Characteristics
figure 28.
IGBT
figure 29.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
td(off)
td(on)
tf
-1
10
-1
10
tf
tr
tr
-2
10
-2
10
-3
10
-3
10
0
25
50
75
100
125
150
175
200
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
4
°C
V
150
600
±15
100
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
4
figure 30.
FWD
figure 31.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,0225
0,0200
0,0175
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
0,030
0,025
0,020
0,015
0,010
0,005
0,000
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
125 °C
150 °C
600
±15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
V
Ω
Copyright Vincotech
24
29 Mar. 2023 / Revision 2
B0-SP103BB100S764-PB80L98T
datasheet
Inner Boost Switching Characteristics
figure 32.
FWD
figure 33.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,45
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
Qr
Qr
Qr
Qr
Qr
Qr
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
150 °C
600
±15
100
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 34.
FWD
figure 35.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
40
35
30
25
20
15
10
5
45
40
35
30
25
20
15
10
5
IRM
IRM
IRM
IRM
IRM
IRM
0
0
0,0
0
25
50
75
100
125
150
175
200
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
150 °C
600
±15
100
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
25
29 Mar. 2023 / Revision 2
B0-SP103BB100S764-PB80L98T
datasheet
Inner Boost Switching Characteristics
figure 36.
FWD
figure 37.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
8000
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
7000
6000
5000
4000
3000
2000
1000
0
dirr/dt ──────
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
150 °C
600
±15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 38.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
225
IC MAX
200
175
150
125
100
75
50
25
0
0
200
400
600
800
1000
1200
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
4
4
Ω
Copyright Vincotech
26
29 Mar. 2023 / Revision 2
B0-SP103BB100S764-PB80L98T
datasheet
Outer Boost Switching Characteristics
figure 39.
IGBT
figure 40.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
8
7
6
5
4
3
2
1
0
5
4
3
2
1
0
Eon
Eoff
Eoff
Eoff
Eon
Eon
Eoff
Eoff
Eoff
Eon
Eon
Eon
0
25
50
75
100
125
150
175
200
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
Ω
125 °C
150 °C
600
±15
100
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
4
figure 41.
FWD
figure 42.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,30
0,25
0,20
0,15
0,10
0,05
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
150 °C
600
±15
100
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
27
29 Mar. 2023 / Revision 2
B0-SP103BB100S764-PB80L98T
datasheet
Outer Boost Switching Characteristics
figure 43.
IGBT
figure 44.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
td(off)
td(on)
tf
-1
10
-1
10
tf
tr
tr
-2
10
-2
10
-3
10
-3
10
0
25
50
75
100
125
150
175
200
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
4
°C
V
150
600
±15
100
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
4
figure 45.
FWD
figure 46.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,0225
0,0200
0,0175
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
0,0225
0,0200
0,0175
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
125 °C
150 °C
600
±15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
V
Ω
Copyright Vincotech
28
29 Mar. 2023 / Revision 2
B0-SP103BB100S764-PB80L98T
datasheet
Outer Boost Switching Characteristics
figure 47.
FWD
figure 48.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
0,45
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
150 °C
600
±15
100
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 49.
FWD
figure 50.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
40
35
30
25
20
15
10
5
50
40
30
20
10
0
IRM
IRM
IRM
IRM
IRM
IRM
0
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
150 °C
600
±15
100
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
29
29 Mar. 2023 / Revision 2
B0-SP103BB100S764-PB80L98T
datasheet
Outer Boost Switching Characteristics
figure 51.
FWD
figure 52.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
8000
10000
8000
6000
4000
2000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
7000
6000
5000
4000
3000
2000
1000
0
dirr/dt ──────
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
150 °C
600
±15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 53.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
225
IC MAX
200
175
150
125
100
75
50
25
0
0
200
400
600
800
1000
1200
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
4
4
Ω
Copyright Vincotech
30
29 Mar. 2023 / Revision 2
B0-SP103BB100S764-PB80L98T
datasheet
Switching Definitions
figure 54.
IGBT
figure 55.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 56.
IGBT
figure 57.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
31
29 Mar. 2023 / Revision 2
B0-SP103BB100S764-PB80L98T
datasheet
Switching Definitions
figure 58.
FWD
figure 59.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
32
29 Mar. 2023 / Revision 2
B0-SP103BB100S764-PB80L98T
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
B0-SP103BB100S764-PB80L98T
B0-SP103BB100S764-PB80L98T-/7/
With thermal paste (5,2 W/mK, PTM6000HV)
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
0
Y
Function
DC-
28
29
11,75
22,85
19,5
C11
C21
50,4
19,45
Boost1
DC-
2
2,7
50,4
30
34,1
21
G25
Boost1
3
4
5
6
7
12,7
15,4
18,5
21,2
31,2
50,4 DC+Boost12 31
50,4 DC+Boost12 32
50,4 DC+Boost12 33
50,4 DC+Boost12 34
34,1
45,4
45,4
45,4
0
18
S25
18,55
15,85
13,15
9,8
Boost3
Boost3
Boost3
G15
50,4
50,4
50,4
50,4
DC-
Boost23
DC-
Boost23
DC-
35
36
37
38
8
9
33,9
37
0
6,8
12,2
9,5
S15
34
34
Boost2
Boost2
Boost23
DC-
10
39,7
Boost23
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
49,7
52,4
0
50,4 DC+Boost3 39
50,4 DC+Boost3 40
33,25
45,4
45,4
0
6,8
7,3
4,3
2,7
0
Boost2
G35
42,25
39,25
44
G17
S17
41
42
43
44
45
46
47
48
49
50
51
52
53
S35
0
FC12
FC12
FC11
FC11
FC21
FC21
FC22
FC22
FC32
FC32
FC31
FC31
33,2
33,2
44,95
44,95
0
G27
0
41
S27
9,55
9,55
18,55
18,55
28,35
28,35
42,4
42,9
52,4
52,4
2,7
0
41,6
38,6
29,7
30
G37
S37
2,7
0
C12
15,55
18,75
30,6
40,6
46,1
0
Therm1
Therm2
C22
2,7
0
30
29,7
29,7
27,85
21
2,7
0
C32
C31
2,7
0
Boost1
Boost1
Boost1
0
18,3
15,6
0
Copyright Vincotech
33
29 Mar. 2023 / Revision 2
B0-SP103BB100S764-PB80L98T
datasheet
Pinout
DC+Boost3
11,12
DC+Boost12
3-6
D17
D27
D37
D16
D36
D26
FC11
44,45
FC21
46,47
FC31
52,53
C31
C11
C21
29
24
28
D15
D25
D35
Boost1
25-27
Boost2
37-39
Boost3
32-34
T15
T25
T35
D45
D55
D65
G15
G25
G35
35
36
30
31
40
41
D14
D24
D34
S15
S25
S35
C32
C12
C22
19
22
23
FC12
42,43
FC32
50,51
FC22
48,49
T17
T27
T37
D47
D57
D67
G17
S17
G27
S27
G37
S37
13
14
15
16
17
18
Rt
1,2
DC-Boost1
7-10
DC-Boost23
20
Therm1
21
Therm2
Identification
Component
Voltage
Current
Function
Comment
ID
T15, T25, T35
IGBT
FWD
950 V
100 A
60 A
Inner Boost Switch
Inner Boost Diode
D15, D25, D35
1200 V
Inner Boost Sw. Protection
Diode
D45, D55 , D65
FWD
1200 V
50 A
T17, T27, T37
D17, D27, D37
IGBT
FWD
950 V
100 A
60 A
Outer Boost Switch
Outer Boost Diode
Outer Boost Sw. Protection
Diode
1200 V
D47, D57, D67
FWD
1200 V
50 A
D16, D26, D36
D14, D24, D34
Rt
FWD
FWD
1200 V
1200 V
35 A
35 A
Aux Diode H
Aux Diode L
Thermistor
Thermistor
Copyright Vincotech
34
29 Mar. 2023 / Revision 2
B0-SP103BB100S764-PB80L98T
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 45
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow S3 packages see vincotech.com website.
Package data
Package data for flow S3 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
B0-SP103BB100S764-PB80L98T-D2-14
29 Mar. 2023
Change Inner/Outer Boost Diode
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
35
29 Mar. 2023 / Revision 2
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