-SP10S3A100S710-LR69L03T [VINCOTECH]
Low collector emitter saturation voltage;High speed and smooth switching;
| 型号： | -SP10S3A100S710-LR69L03T |
| 厂家： | 
VINCOTECH |
| 描述： | Low collector emitter saturation voltage;High speed and smooth switching |
| 文件： | 总22页 (文件大小：7273K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
B0-SP10S3A100S710-LR69L03T
datasheet
flowBOOST S3 symmetric triple
950 V / 100 A
Features
flow S3 12 mm housing
● Triple Symmetric Booster
● Latest IGBT & SiC technology
● Low inductance housing
● Integrated NTC
Schematic
Target applications
● Solar Inverters
Types
● B0-SP10S3A100S710-LR69L03T
Copyright Vincotech
1
21 Jul. 2021 / Revision 1
B0-SP10S3A100S710-LR69L03T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Boost Switch
VCES
Collector-emitter voltage
950
77
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
200
145
±20
175
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
Boost Diode
VRRM
Peak repetitive reverse voltage
1200
55
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Surge (non-repetitive) forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
IFRM
IFSM
Ptot
tp limited by Tjmax
188
284
152
175
A
Single Half Sine Wave,
tp = 10 ms
Tj = 25 °C
Ts = 80 °C
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
Boost Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
1600
64
V
A
IF
IFSM
I2t
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
400
800
77
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Copyright Vincotech
2
21 Jul. 2021 / Revision 1
B0-SP10S3A100S710-LR69L03T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
ByPass Diode
VRRM
Peak repetitive reverse voltage
1600
64
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
400
800
77
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Creepage distance
Clearance
Visol
DC Test Voltage*
tp = 2 s
6000
8,83
V
mm
mm
7,54
Comparative Tracking Index
*100 % tested in production
CTI
≥ 600
Copyright Vincotech
3
21 Jul. 2021 / Revision 1
B0-SP10S3A100S710-LR69L03T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,00167 25
25
4,35
5,1
5,85
V
V
1,67
1,94
2,01
2,35(1)
VCEsat
Collector-emitter saturation voltage
15
100
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
950
0
25
2
µA
nA
Ω
20
25
100
1,5
6500
139
20
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 100 kHz
0
25
25
25
Reverse transfer capacitance
Gate charge
15
0
230
Thermal
λpaste = 4,4 W/mK
(PTM)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,66
K/W
25
36,16
34,88
34,56
11,2
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
12,16
12,16
185,6
228,8
243,52
24,78
59,43
73,97
1,28
Rgon = 4 Ω
Rgoff = 4 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
0/15
600
65
tf
125
150
25
ns
QrFWD=0,133 µC
QrFWD=0,155 µC
QrFWD=0,159 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
1,46
mWs
mWs
1,48
1,89
Eoff
125
150
3,16
3,37
Copyright Vincotech
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21 Jul. 2021 / Revision 1
B0-SP10S3A100S710-LR69L03T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Diode
Static
25
1,51
2,03
2,13
1,8(1)
1000
VF
IR
Forward voltage
40
125
150
V
Reverse leakage current
Thermal
Vr = 1200 V
25
120
µA
λpaste = 4,4 W/mK
(PTM)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,62
K/W
25
28,6
30,38
30,41
15,25
16,18
16,52
0,133
0,155
0,159
0,047
0,057
0,058
5333
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=4635 A/µs
di/dt=4437 A/µs
di/dt=4492 A/µs
Qr
Recovered charge
0/15
600
65
125
150
25
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
5331
5091
Copyright Vincotech
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21 Jul. 2021 / Revision 1
B0-SP10S3A100S710-LR69L03T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Boost Sw. Protection Diode
Static
25
1,09
1,02
1,02
1,5(1)
VF
IR
Forward voltage
35
125
150
25
V
100
Reverse leakage current
Thermal
Vr = 1600 V
µA
150
2000
λpaste = 4,4 W/mK
(PTM)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,91
K/W
ByPass Diode
Static
25
1,09
1,02
1,02
1,5(1)
VF
IR
Forward voltage
35
125
150
25
V
100
Reverse leakage current
Thermal
Vr = 1600 V
µA
150
2000
λpaste = 4,4 W/mK
(PTM)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,91
K/W
Copyright Vincotech
6
21 Jul. 2021 / Revision 1
B0-SP10S3A100S710-LR69L03T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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21 Jul. 2021 / Revision 1
B0-SP10S3A100S710-LR69L03T
datasheet
Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
300
300
VGE
:
7 V
8 V
250
200
150
100
50
250
200
150
100
50
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0,0
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
100
10
75
50
25
0
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
2
4
6
8
10
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,656
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
8,75E-02
3,39E-01
1,74E-01
2,53E-02
3,08E-02
1,42E+00
1,02E-01
2,16E-02
1,80E-03
2,55E-04
Copyright Vincotech
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21 Jul. 2021 / Revision 1
B0-SP10S3A100S710-LR69L03T
datasheet
Boost Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
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21 Jul. 2021 / Revision 1
B0-SP10S3A100S710-LR69L03T
datasheet
Boost Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
100
75
50
25
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
6
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,624
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
4,85E-02
8,72E-02
2,96E-01
1,32E-01
6,05E-02
3,13E+00
4,67E-01
6,09E-02
1,18E-02
1,84E-03
Copyright Vincotech
10
21 Jul. 2021 / Revision 1
B0-SP10S3A100S710-LR69L03T
datasheet
Boost Sw. Protection Diode Characteristics
figure 8.
Rectifier
figure 9.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
100
75
50
25
0
10
-1
10
-2
10
0,5
0,2
-3
10
0,1
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
VF(V)
10
10
10
10
tp(s)
tp
=
250
D =
tp / T
0,908
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
Rectifier thermal model values
R (K/W)
τ (s)
4,71E-02
8,03E-02
3,52E-01
3,38E-01
9,09E-02
4,22E+00
6,88E-01
9,74E-02
2,41E-02
1,52E-03
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21 Jul. 2021 / Revision 1
B0-SP10S3A100S710-LR69L03T
datasheet
ByPass Diode Characteristics
figure 10.
Rectifier
figure 11.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
100
75
50
25
0
10
-1
10
-2
10
0,5
0,2
-3
10
0,1
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
VF(V)
10
10
10
10
tp(s)
tp
=
250
D =
tp / T
0,908
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
Rectifier thermal model values
R (K/W)
τ (s)
4,71E-02
8,03E-02
3,52E-01
3,38E-01
9,09E-02
4,22E+00
6,88E-01
9,74E-02
2,41E-02
1,52E-03
Copyright Vincotech
12
21 Jul. 2021 / Revision 1
B0-SP10S3A100S710-LR69L03T
datasheet
Thermistor Characteristics
figure 12.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
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21 Jul. 2021 / Revision 1
B0-SP10S3A100S710-LR69L03T
datasheet
Boost Switching Characteristics
figure 13.
IGBT
figure 14.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
6
5
4
3
2
1
0
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Eoff
Eoff
Eoff
Eoff
Eon
Eon
Eon
Eon
Eoff
Eon
Eon
Eoff
0
25
50
75
100
125
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
0/15
4
V
V
Ω
Ω
125 °C
150 °C
600
0/15
65
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
4
figure 15.
FWD
figure 16.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
0,10
0,08
0,06
0,04
0,02
0,00
0,10
0,08
0,06
0,04
0,02
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
25
50
75
100
125
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
0/15
4
V
V
Ω
125 °C
150 °C
600
0/15
65
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
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21 Jul. 2021 / Revision 1
B0-SP10S3A100S710-LR69L03T
datasheet
Boost Switching Characteristics
figure 17.
IGBT
figure 18.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(off)
-1
10
-1
10
tf
td(on)
tr
tf
td(on)
tr
-2
10
-2
10
-3
10
-3
10
0
25
50
75
100
125
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
IC(A)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
0/15
4
°C
V
150
600
0/15
65
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
4
figure 19.
FWD
figure 20.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,0200
0,0175
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
0,0225
0,0200
0,0175
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
0/15
4
V
V
Ω
125 °C
150 °C
600
0/15
65
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
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21 Jul. 2021 / Revision 1
B0-SP10S3A100S710-LR69L03T
datasheet
Boost Switching Characteristics
figure 21.
FWD
figure 22.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,200
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
Qr
Qr
Qr
Qr
Qr
Qr
0
25
50
75
100
125
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
0/15
4
V
V
Ω
125 °C
150 °C
600
0/15
65
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 23.
FWD
figure 24.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
40
35
30
25
20
15
10
5
50
40
30
20
10
0
IRM
IRM
IRM
IRM
IRM
IRM
0
0
25
50
75
100
125
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
0/15
4
V
V
Ω
125 °C
150 °C
600
0/15
65
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
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21 Jul. 2021 / Revision 1
B0-SP10S3A100S710-LR69L03T
datasheet
Boost Switching Characteristics
figure 25.
FWD
figure 26.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
8000
10000
8000
6000
4000
2000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
7000
6000
5000
4000
3000
2000
1000
0
dirr/dt ──────
0
25
50
75
100
125
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
0/15
4
V
V
Ω
125 °C
150 °C
600
0/15
65
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 27.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
225
IC MAX
200
175
150
125
100
75
50
25
0
0
200
400
600
800
1000
1200
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
4
4
Ω
Copyright Vincotech
17
21 Jul. 2021 / Revision 1
B0-SP10S3A100S710-LR69L03T
datasheet
Boost Switching Definitions
figure 28.
IGBT
figure 29.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 30.
IGBT
figure 31.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
18
21 Jul. 2021 / Revision 1
B0-SP10S3A100S710-LR69L03T
datasheet
Boost Switching Definitions
figure 32.
FWD
figure 33.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
19
21 Jul. 2021 / Revision 1
B0-SP10S3A100S710-LR69L03T
datasheet
Ordering Code
Marking
Version
Ordering Code
With thermal paste (4,4 W/mK, PTM6000)
B0-SP10S3A100S710-LR69L03T-/7/
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
DC+In1
DC+In1
Boost+1
Boost+1
DC+In2
DC+In2
Boost+2
Boost+2
DC+In3
DC+In3
Boost+3
Boost+3
Therm1
Therm2
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
26,2
28,9
38,6
41,3
31,4
28,4
14,2
11,8
41,3
38,6
26,9
26,9
28,9
31,4
16,5
50,4
50,4
N1
N1
52,4
52,4
52,4
52,4
52,4
52,4
52,4
52,4
52,4
52,4
52,4
52,4
24,35
21,35
50,4
47,7
41,7
39
2
50,4 DC+Boost1
50,4 DC+Boost1
3
4
43,9
43,9
42,3
39,3
G17
S17
G15
S15
5
32,6
29,9
23,9
21,2
14,8
12,1
6,1
6
7
8
32,6 DC+Boost2
32,6 DC+Boost2
9
10
11
12
13
14
34,6
31,9
28,9
25,9
32,6
N2
N2
3,4
S27
0
G27
0
DC-
Boost2
DC-
15
2,7
0
Boost-3
44
13,8
32,6
Boost2
G25
16
17
18
19
20
21
22
0
0
0
Boost-3
DC-In3
DC-In3
Boost-2
Boost-2
DC-In2
DC-In2
45
46
47
48
49
50
51
14,2
11,8
41,3
38,6
28,9
26,2
16,5
24,5
21,5
6,05
8,75
17,8
17,8
23,85
26,55
S25
0
14,8 DC+Boost3
14,8 DC+Boost3
2,7
0
14,8
14,8
14,8
N3
N3
0
0
DC-
Boost3
DC-
23
2,7
35,6
Boost-1
52
13,8
14,8
Boost3
G37
24
25
26
27
28
0
0
35,6
41,65
44,35
Boost-1
DC-In1
DC-In1
53
54
55
31,4
28,4
14,2
11,8
8,3
8,3
6,7
3,7
S37
0
G35
13,8
16,5
50,4 DC+Boost1 56
S35
50,4
DC-
Boost1
Copyright Vincotech
20
21 Jul. 2021 / Revision 1
B0-SP10S3A100S710-LR69L03T
datasheet
Pinout
D18
D28
D38
DC+In1
1,2
DC+In2
5,6
DC+In3
9,10
D17
D27
D37
Boost+1
3,4
DC+Boost1
31,32
Boost+2
7,8
DC+Boost2
37,38
Boost+3
11,12
DC+Boost3
47,48
T17
T27
T37
D47
D57
D67
G27
G17
G37
33
34
42
41
53
54
S17
S27
S37
N1
N2
N3
29,30
39,40
49,50
T15
T25
T35
D45
D55
D65
G15
S15
G25
S25
G35
S35
35
36
45
46
55
56
D15
D25
D35
Boost-1
DC-Boost1
27,28
Boost-2
DC-Boost2
43,44
Boost-3
DC-Boost3
51,52
23,24
19,20
15,16
D16
D26
Rt
D36
DC-In1
25,26
DC-In2
21,22
DC-In3
17,18
13
14
Therm1
Therm2
Identification
Component
Voltage
Current
Function
Comment
ID
T15, T17, T25, T27,
IGBT
950 V
100 A
40 A
35 A
35 A
Boost Switch
Boost Diode
T35, T37
D15, D17, D25, D27,
D35, D37
FWD
1200 V
1600 V
1600 V
D45, D47, D57, D55 ,
D65, D67
Rectifier
Boost Sw. Protection Diode
D16, D18, D26, D28,
D36, D38
Rectifier
ByPass Diode
Thermistor
Rt
Thermistor
Copyright Vincotech
21
21 Jul. 2021 / Revision 1
B0-SP10S3A100S710-LR69L03T
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 45
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow S3 packages see vincotech.com website.
Package data
Package data for flow S3 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
B0-SP10S3A100S710-LR69L03T-D1-14
21 Jul. 2021
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
22
21 Jul. 2021 / Revision 1
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