10-0B06PPA010RC-L025A09

datasheet

flowPIM 0B + PFC

600 V / 10 A

Features

flow 0B 17 mm housing

● Converter, PFC, inverter in one housing

● High speed IGBT for PFC

● One screw heatsink mounting

Schematic

Target applications

● Embedded Drives

Types

● 10-0B06PPA010RC-L025A09

Maximum Ratings

Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Condition

Value

Unit

Rectifier Diode

V_RRM

I_F

I_FRM

P_tot

Peak repetitive reverse voltage

1600

18

V

A

Continuous (direct) forward current

Repetitive peak forward current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

60 Hz Single Half Sine Wave

150

34

A

T_j= T_jmax

W

°C

T_jmax

Maximum junction temperature

150

Copyright Vincotech

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15 Feb. 2019 / Revision 4

10-0B06PPA010RC-L025A09

datasheet

Maximum Ratings

Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Condition

Value

Unit

Inverter Switch

V_CES

I_C

Collector-emitter voltage

600

14

V

A

Collector current

T_j= T_jmax

T_s= 80 °C

T_j= 150 °C

I_CRM

P_tot

V_GES

t_SC

Repetitive peak collector current

Total power dissipation

Gate-emitter voltage

t_plimited by T_jmax

T_j= T_jmax

30

A

44

W

V

±20

5

Short circuit ratings

V_GE= 15 V

V_cc= 400 V

µs

°C

T_jmax

Maximum junction temperature

175

Inverter Diode

V_RRM

I_F

P_tot

T_jmax

Peak repetitive reverse voltage

600

14

V

A

Continuous (direct) forward current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

44

W

°C

Maximum junction temperature

175

PFC Switch

V_CES

I_C

I_CRM

P_tot

V_GES

T_jmax

Collector-emitter voltage

650

29

V

A

Collector current

T_j= T_jmax

T_s= 80 °C

Repetitive peak collector current

Total power dissipation

Gate-emitter voltage

t_plimited by T_jmax

T_j= T_jmax

90

A

55

W

V

±20

175

Maximum junction temperature

°C

PFC Diode

V_RRM

I_F

I_FRM

P_tot

Peak repetitive reverse voltage

650

33

V

A

Continuous (direct) forward current

Repetitive peak forward current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

60

A

T_j= T_jmax

45

W

°C

T_jmax

Maximum junction temperature

175

Copyright Vincotech

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10-0B06PPA010RC-L025A09

datasheet

Maximum Ratings

Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Condition

Value

Unit

PFC Sw. Protection Diode

V_RRM

I_F

I_FRM

P_tot

Peak repetitive reverse voltage

650

6

V

A

Continuous (direct) forward current

Repetitive peak forward current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

12

A

T_j= T_jmax

32

W

°C

T_jmax

Maximum junction temperature

175

Module Properties

Thermal Properties

T_stg

T_jop

Storage temperature

-40…+125

°C

Operation temperature under switching condition

Isolation Properties

-40…(T_jmax- 25)

DC Test Voltage*

AC Voltage

t_p= 2 s

6000

2500

V

V_isol

Isolation voltage

t_p= 1 min

V

Creepage distance

min. 12,7

> 200

mm

Clearance

Comparative Tracking Index

*100 % tested in production

CTI

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10-0B06PPA010RC-L025A09

datasheet

Characteristic Values

Parameter

Symbol

Conditions

Value

Typ

Unit

V_CE[V] I_C[A]

V_GE[V]

V_GS[V]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

Min

Max

Rectifier Diode

Static

25

1,04

0,97

1,14

20

V_F

I_R

Forward voltage

Reverse leakage current

Thermal

7

V

125

1600

25

µA

λ_paste= 3,4 W/mK

(PSX)

R_th(j-s)

Thermal resistance junction to sink

2,09

K/W

Inverter Switch

Static

V_GE(th)

Gate-emitter threshold voltage

V_GE= V_CE

0,00017 25

25

4,4

5

5,6

V

1,88

2,19

2,28

2,30

2,62

V_CEsat

Collector-emitter saturation voltage

15

10

125

150

I_CES

I_GES

r_g

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

0

600

0

25

2

µA

nA

Ω

20

25

120

none

655

37

C_ies

C_oes

C_res

Q_g

Output capacitance

f = 1 Mhz

0

25

pF

Reverse transfer capacitance

Gate charge

22

15

480

10

64

nC

Thermal

λ_paste= 3,4 W/mK

(PSX)

R_th(j-s)

Thermal resistance junction to sink

2,15

K/W

Dynamic

25

125

25

125

25

125

25

125

25

125

25

125

74

71

18

22

97

105

5

35

0,244

0,357

0,122

0,181

t_d(on)

t_r

t_d(off)

t_f

Turn-on delay time

Rise time

R_gon= 32 Ω

R_goff= 32 Ω

ns

Turn-off delay time

Fall time

±15

400

10

Q_r

= 0,5 μC

= 0,9 μC

FWD

E_on

E_off

Turn-on energy (per pulse)

Turn-off energy (per pulse)

FWD

mWs

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datasheet

Characteristic Values

Parameter

Symbol

Conditions

Value

Typ

Unit

V_CE[V] I_C[A]

V_GE[V]

V_GS[V]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

Min

Max

Inverter Diode

Static

25

2,16

2,04

2,02

2,8

Forward voltage

V_F

10

125

150

V

Thermal

λ_paste= 3,4 W/mK

(PSX)

R_th(j-s)

Thermal resistance junction to sink

2,15

K/W

Dynamic

25

125

25

125

25

125

25

125

25

125

7

10

174

233

0,451

0,893

0,121

0,243

93

I_RRM

Peak recovery current

Reverse recovery time

Recovered charge

A

t_rr

Q_r

ns

di/dt = 452 A/μs

di/dt = 483 A/μs

±15

400

10

μC

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

mWs

A/µs

(di_rf/dt)_max

83

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datasheet

Characteristic Values

Parameter

Symbol

Conditions

Value

Typ

Unit

V_CE[V] I_C[A]

V_GE[V]

V_GS[V]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

Min

Max

PFC Switch

Static

V_GE(th)

Gate-emitter threshold voltage

V_GE= V_CE

0,0003 25

25

3,3

4

4,7

V

1,67

1,80

1,84

2,22

V_CEsat

Collector-emitter saturation voltage

15

30

125

150

I_CES

I_GES

r_g

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

0

650

0

25

40

µA

nA

Ω

20

120

none

2100

7,7

C_ies

C_res

Q_g

f = 1 Mhz

0

25

pF

Reverse transfer capacitance

Gate charge

15

520

30

70

nC

Thermal

λ_paste= 3,4 W/mK

(PSX)

R_th(j-s)

Thermal resistance junction to sink

1,74

K/W

Dynamic

25

28

25

26

t_d(on)

125

150

25

Turn-on delay time

9

t_r

Rise time

125

150

25

125

150

25

125

150

25

125

150

25

10

147

167

172

9

12

13

0,594

0,722

0,744

0,154

R_gon= 16 Ω

R_goff= 16 Ω

ns

t_d(off)

Turn-off delay time

Fall time

0 / 15

400

30

t_f

Q_r

FWD

Q_r

FWD

Q_r

FWD

= 1 μC

= 1,8 μC

= 2 μC

E_on

Turn-on energy (per pulse)

mWs

E_off

Turn-off energy (per pulse)

125

150

0,284

0,324

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datasheet

Characteristic Values

Parameter

Symbol

Conditions

Value

Typ

Unit

V_CE[V] I_C[A]

V_GE[V]

V_GS[V]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

Min

Max

PFC Diode

Static

25

1,48

1,40

1,37

1,92

1,6

V_F

I_R

125

150

Forward voltage

30

V

Reverse leakage current

650

400

650

25

µA

Thermal

λ_paste= 3,4 W/mK

(PSX)

R_th(j-s)

Thermal resistance junction to sink

2,09

K/W

Dynamic

25

22

31

34

78

90

I_RRM

125

150

25

125

150

25

125

150

25

125

150

25

Peak recovery current

A

t_rr

Q_r

Reverse recovery time

ns

99

di/dt = 3590 A/μs

di/dt = 3352 A/μs

di/dt = 3244 A/μs

0,970

1,798

2,047

0,220

0,448

0,523

494

0 / 15

30

Recovered charge

μC

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

mWs

A/µs

(di_rf/dt)_max

125

150

466

356

PFC Sw. Protection Diode

Static

25

1,73

1,59

1,54

1,87

0,1

V_F

I_R

125

150

Forward voltage

6

V

Reverse leakage current

25

µA

Thermal

λ_paste= 3,4 W/mK

(PSX)

R_th(j-s)

Thermal resistance junction to sink

3,01

K/W

Copyright Vincotech

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datasheet

Characteristic Values

Parameter

Symbol

Conditions

Value

Typ

Unit

V_CE[V] I_C[A]

V_GE[V]

V_GS[V]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

Min

Max

Thermistor

R

Δ_R/R

P

Rated resistance

25

100

25

22

kΩ

%

Deviation of R₁₀₀

Power dissipation

Power dissipation constant

B-value

R₁₀₀= 1484 Ω

-5

5

mW

mW/K

K

1,5

B_(25/50)

Tol. ±1 %

3962

4000

B_(25/100)

B-value

K

Vincotech NTC Reference

I

Copyright Vincotech

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10-0B06PPA010RC-L025A09

datasheet

Rectifier Diode Characteristics

figure 1.

FWD

figure 2.

FWD

Typical forward characteristics

Transient thermal impedance as a function of pulse width

I _F= f(V_F)

Z _th(j-s)= f(t_p)

10⁰

21

18

15

12

9

Z

10^-1

0,5

0,2

6

0,1

0,05

0,02

0,01

0,005

0

3

10^-2

0

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

10²

t_p(s)

0

0,5

1

1,5

2

2,5

3

V_F(V)

t_p

=

250

μs

25 °C

D =

t_p/ T

2,09

T_j:

125 °C

R _th(j-s)

=

K/W

FWD thermal model values

R (K/W)

τ (s)

4,86E-02

1,45E-01

1,18E+00

5,40E-01

1,74E-01

1,03E+01

6,91E-01

6,09E-02

1,88E-02

1,96E-03

Copyright Vincotech

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datasheet

Inverter Switch Characteristics

figure 1.

IGBT

figure 2.

IGBT

Typical output characteristics

I _C= f(V_CE

)

I _C= f(V_CE)

35

45

V_GE

:

7

V

I

40

I

8

9

30

25

20

15

10

5

10

11

12

13

14

15

16

17

V

35

30

25

20

15

10

5

0

0,5

1

1,5

2

2,5

3

3,5

4

4,5

5

1

2

3

4

5

V_{C E}(V)

t_p

=

250

15

μs

25 °C

125 °C

150 °C

t_p

T_j

=

250

150

7 V to 17 V in steps of 1 V

μs

V_GE

=

V

T_j:

°C

V_GEfrom

figure 3.

IGBT

figure 4.

IGBT

Typical transfer characteristics

Transient thermal impedance as function of pulse duration

I _C= f(V_GE

)

Z _th(j-s)= f(t_p)

10¹

10

I

8

Z

10⁰

6

4

2

0,5

10^-1

0,2

0,1

0,05

0,02

0,01

0,005

0

10^-2

10^-5

0

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

t_p(s)

10²

2

4

6

8

10

12

V_{G E}(V)

t_p

=

100

10

μs

25 °C

125 °C

150 °C

D =

R _th(j-s)

t_p/ T

V_CE

=

V

T_j:

=

2,15

K/W

IGBT thermal model values

R (K/W)

τ (s)

7,60E-02

1,59E-01

1,01E+00

6,48E-01

2,57E-01

2,82E+00

4,19E-01

6,63E-02

2,63E-02

3,72E-03

Copyright Vincotech

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datasheet

Inverter Switch Characteristics

figure 5.

IGBT

figure 6.

IGBT

Gate voltage vs gate charge

Safe operating area

V_GE= f(Q _G

)

I _C= f(V_CE)

16

100

120 V

10ms

V

I

1ms

10µs

100µs

14

100ms

DC

12

10

8

10

480 V

1

6

4

0,1

2

0

0,01

1

10

20

30

40

50

60

70

10

100

1000

V_{C E}(V)

Q_G(nC)

D =

single pulse

80 ºC

I _C

=

10

A

T_s

=

V_GE

=

±15

V

T_j=

T_jmax

figure 7.

IGBT

figure 8.

IGBT

Short circuit duration as a function of V_GE

Typical short circuit current as a function of V_GE

t_pSC= f(V_GE

)

I _SC= f(V_GE)

10

160

9

I

t

140

8

7

6

5

4

3

2

1

120

100

80

60

40

20

0

12

13

14

15

16

17

18

19

20

12

13

14

15

16

17

V_{G E}(V)

V_CE

T_j

=

V_CE

T_j

≤

400

150

V

ºC

400

25

V

ºC

≤

Copyright Vincotech

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datasheet

Inverter Diode Characteristics

figure 1.

FWD

figure 2.

FWD

Typical forward characteristics

Transient thermal impedance as a function of pulse width

I _F= f(V_F)

Z _th(j-s)= f(t_p)

10¹

45

40

35

30

25

20

15

10

5

Z

10⁰

0,5

10^-1

0,2

0,1

0,05

0,02

0,01

0,005

0

10^-2

0

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

10²

t_p(s)

0

1

2

3

4

5

V_F(V)

t_p

=

250

μs

25 °C

125 °C

150 °C

D =

t_p/ T

2,15

T_j:

R _th(j-s)

=

K/W

FWD thermal model values

R (K/W)

τ (s)

7,60E-02

1,59E-01

1,01E+00

6,48E-01

2,57E-01

2,82E+00

4,19E-01

6,63E-02

2,63E-02

3,72E-03

Copyright Vincotech

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datasheet

PFC Switch Characteristics

figure 1.

IGBT

figure 2.

IGBT

Typical output characteristics

I _C= f(V_CE

)

I _C= f(V_CE)

90

V_GE

:

7

V

I

8

9

75

60

45

30

15

0

75

10

11

12

13

14

15

16

17

V

60

45

30

15

0

1

2

3

4

5

0,5

1

1,5

2

2,5

3

V_{C E}(V)

t_p

=

250

15

μs

25 °C

125 °C

150 °C

t_p

T_j

=

250

150

μs

°C

V_GE

=

V

T_j:

V_GEfrom

7 V to 17 V in steps of 1 V

figure 3.

IGBT

figure 4.

IGBT

Typical transfer characteristics

Transient thermal impedance as function of pulse duration

I _C= f(V_GE

)

Z _th(j-s)= f(t_p)

10¹

20

I

16

Z

10⁰

12

8

0,5

10^-1

0,2

0,1

0,05

0,02

0,01

0,005

0

4

10^-2

10^-5

0

3

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

t_p(s)

10²

3,75

4,5

5,25

6

6,75

V_{G E}(V)

t_p

=

100

10

μs

25 °C

125 °C

150 °C

D =

R _th(j-s)

t_p/ T

V_CE

=

V

T_j:

=

1,74

K/W

IGBT thermal model values

R (K/W)

τ (s)

1,29E-01

7,29E-01

6,55E-01

1,29E-01

9,92E-02

5,83E-01

6,38E-02

2,28E-02

2,24E-03

3,38E-04

Copyright Vincotech

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datasheet

PFC Switch Characteristics

figure 5.

IGBT

figure 6.

IGBT

Gate voltage vs gate charge

Safe operating area

V_GE= f(Q _G

)

I _C= f(V_CE)

15

100

130 V

V

I

12,5

10

520 V

10

7,5

5

1

0,1

2,5

0

0,01

1

14

28

42

56

70

Q_G(nC)

10

100

1000

V_{C E}(V)

D =

single pulse

80 ºC

I _C

=

30

A

T_s

=

V_GE

=

±15

V

T_j=

T_jmax

Copyright Vincotech

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datasheet

PFC Diode Characteristics

figure 1.

FWD

figure 2.

FWD

Typical forward characteristics

Transient thermal impedance as a function of pulse width

I _F= f(V_F)

Z _th(j-s)= f(t_p)

10¹

90

75

60

45

30

15

0

10⁰

Z

10^-1

10^-2

10^-3

0,5

0,2

0,1

0,05

0,02

0,01

0,005

0

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

10²

t_p(s)

0

0,5

1

1,5

2

2,5

3

V_F(V)

t_p

=

250

μs

25 °C

125 °C

150 °C

D =

t_p/ T

T_j:

R _th(j-s)

=

2,09

K/W

FWD thermal model values

R (K/W)

τ (s)

4,06E-02

7,59E+00

7,59E-01

8,62E-02

2,66E-02

4,54E-03

5,55E-04

1,41E-01

6,53E-01

8,80E-01

2,25E-01

1,55E-01

Copyright Vincotech

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datasheet

PFC Sw. Protection Diode Characteristics

figure 1.

FWD

figure 2.

FWD

Typical forward characteristics

Transient thermal impedance as a function of pulse width

I _F= f(V_F)

Z _th(j-s)= f(t_p)

10¹

18

15

12

9

Z

10⁰

0,5

10^-1

6

0,2

0,1

0,05

0,02

0,01

0,005

0

3

10^-2

0

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

10²

t_p(s)

0

1

2

3

4

V_F(V)

t_p

=

250

μs

25 °C

125 °C

150 °C

D =

t_p/ T

3,01

T_j:

R _th(j-s)

=

K/W

FWD thermal model values

R (K/W)

τ (s)

5,15E-02

9,53E-02

3,22E-01

1,35E+00

8,32E-01

3,58E-01

9,38E+00

8,91E-01

1,25E-01

2,97E-02

8,19E-03

1,78E-03

Thermistor Characteristics

figure 1.

Thermistor

Typical Thermistor resistance values

Typical NTC characteristic as a function of temperature

as a function of temperature

R = f(T)

NTC-typical temperature characteristic

25000

20000

15000

10000

5000

0

25

50

75

100

125

T (°C)

Copyright Vincotech

16

15 Feb. 2019 / Revision 4

10-0B06PPA010RC-L025A09

datasheet

Inverter Switching Characteristics

figure 1.

IGBT

figure 2.

IGBT

Typical switching energy losses as a function of collector current

Typical switching energy losses as a function of gate resistor

E = f(R _g)

E = f(I _C

)

0,8

E

E_on

0,6

E_on

0,4

0,2

0

0,4

0,2

0

E_off

0

4

8

12

16

20

0

40

80

120

160

R_g(Ω)

I_C(A)

With an inductive load at

25 °C

With an inductive load at

25 °C

125 °C

T_j:

V_CE

=

400

±15

32

V

Ω

V_CE

V_GE

I _C

=

400

±15

10

V

A

125 °C

V_GE

R _gon

R _goff

32

figure 3.

FWD

figure 4.

FWD

Typical reverse recovered energy loss as a function of collector current

Typical reverse recovered energy loss as a function of gate resistor

E_rec= f(I _c)

E_rec= f(R _g)

0,3

0,4

E

0,25

E_rec

0,3

E_rec

0,2

0,15

0,1

0,05

0

0,2

0,1

0

E_rec

0

40

80

120

160

R_g(Ω)

0

4

8

12

16

20

I_C(A)

With an inductive load at

25 °C

With an inductive load at

25 °C

T_j:

V_CE

=

400

±15

32

V

Ω

V_CE

V_GE

I _C

=

400

±15

10

V

A

125 °C

V_GE

R _gon

Copyright Vincotech

17

15 Feb. 2019 / Revision 4

10-0B06PPA010RC-L025A09

datasheet

Inverter Switching Characteristics

figure 5.

IGBT

figure 6.

IGBT

Typical switching times as a function of collector current

Typical switching times as a function of gate resistor

t = f(I _C

)

t = f(R _g)

1

t

t_d(off)

t_d(on)

t_d(off)

0,1

t_d(on)

t_r

t_f

0,01

0,001

0

40

80

120

160

0

4

8

12

16

20

R_g(Ω)

I_C(A)

With an inductive load at

T_j=

125

400

±15

32

°C

V

T_j=

125

400

±15

10

°C

V

V_CE

=

V_CE

=

V_GE

R _gon

R _goff

V

V_GE

I _C

V

Ω

A

32

figure 7.

FWD

figure 8.

FWD

Typical reverse recovery time as a function of collector current

Typical reverse recovery time as a function of IGBT turn on gate resistor

t_rr= f(I _C

)

t_rr= f(R _gon)

0,3

0,4

t_rr

t

t_rr

0,25

0,3

t_rr

0,2

0,15

0,1

0,05

0

t_rr

0,2

0,1

0

4

8

12

16

20

40

80

120

160

R_gon(Ω)

I_C(A)

With an inductive load at

25 °C

With an inductive load at

25 °C

125 °C

T_j:

V_CE

=

400

±15

32

V

Ω

V_CE

V_GE

I _C

=

400

±15

10

V

A

125 °C

V_GE

R _gon

Copyright Vincotech

18

15 Feb. 2019 / Revision 4

10-0B06PPA010RC-L025A09

datasheet

Inverter Switching Characteristics

figure 9.

FWD

figure 10.

FWD

Typical recovered charge as a function of collector current

Typical recovered charge as a function of IGBT turn on gate resistor

Q _r= f(I _C

)

Q _r= f(R _gon)

1,6

1,2

Q

Q_r

1,2

0,9

Q_r

0,8

0,4

0,6

0,3

Q_r

0

At

0

4

8

12

16

20

40

80

120

160

R_{g on}(Ω)

I_C(A)

With an inductive load at

25 °C

With an inductive load at

25 °C

125 °C

T_j:

V_CE

=

400

±15

32

V

Ω

V_CE=

V_GE=

I _C=

400

±15

10

V

A

125 °C

V_GE

R _gon

figure 11.

FWD

figure 12.

FWD

Typical peak reverse recovery current current as a function of collector current

Typical peak reverse recovery current as a function of IGBT turn on gate resistor

I _RM= f(I _C

)

I _RM= f(R _gon)

12

20

I_RM

I

9

15

I_RM

10

5

6

3

I_RM

0

40

80

120

160

R_{go n}(Ω)

4

8

12

16

20

I_C(A)

With an inductive load at

25 °C

With an inductive load at

25 °C

125 °C

T_j:

V_CE

=

400

±15

32

V

Ω

V_CE

V_GE

I _C

=

400

±15

10

V

A

125 °C

V_GE

R _gon

Copyright Vincotech

19

15 Feb. 2019 / Revision 4

10-0B06PPA010RC-L025A09

datasheet

Inverter Switching Characteristics

figure 13.

FWD

figure 14.

FWD

Typical rate of fall of forward and reverse recovery current as a function of collector current

Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor

di _F/dt, di _rr/dt = f(I _C

)

di _F/dt, di _rr/dt = f(R _gon)

2000

700

di_F/dt

di_{r r}/dt

t

600

i

1500

1000

500

400

300

200

100

0

40

80

120

160

R_gon(Ω)

4

8

12

16

20

I_C(A)

With an inductive load at

25 °C

With an inductive load at

25 °C

125 °C

T_j:

V_CE

=

400

±15

32

V

Ω

V_CE=

V_GE=

I _C=

400

±15

10

V

125 °C

V_GE

V

A

R _gon

figure 15.

IGBT

Reverse bias safe operating area

I _C= f(V_CE

)

25

I

I_{C MAX}

20

I

15

10

5

I

V

0

100

200

300

400

500

600

700

V_{C E}(V)

At

T_j=

125

°C

Ω

R _gon

R _goff

=

32

Ω

Copyright Vincotech

20

15 Feb. 2019 / Revision 4

10-0B06PPA010RC-L025A09

datasheet

Inverter Switching Definitions

General conditions

T _j

=

125 °C

R_gon

R_goff

32 Ω

figure 1.

IGBT

figure 2.

IGBT

Turn-off Switching Waveforms & definition of t_doff, t_Eoff(t_Eoff= integrating time for E_off

)

Turn-on Switching Waveforms & definition of t_don, t_Eon(t_Eon= integrating time for E_on)

t_doff

%

V_{GE 90%}

V_{CE 90%}

I_C

V_GE

V_CE

t_don

t_Eoff

I_{C 1%}

V_{CE 3%}

V_CE

I_{C 10%}

V_{GE 10%}

t_Eon

t (µs)

V_GE(0%) =

-15

15

V

V_GE(0%) =

-15

V

V_GE(100%) =

V_C(100%) =

I _C(100%) =

V

V_GE(100%) =

V_C(100%) =

I _C(100%) =

15

V

400

10

V

400

10

V

A

t_doff

=

105

ns

t_don

=

71

ns

figure 3.

IGBT

figure 4.

IGBT

Turn-off Switching Waveforms & definition of t_f

Turn-on Switching Waveforms & definition of t_r

fitted

%

I_C

I_{C 90%}

I_{C 60%}

I_{C 40%}

V_CE

I_{C 90%}

t_r

I_C10%

V_CE

I_{C 10%}

t_f

t (µs)

V_C(100%) =

I _C(100%) =

t_f=

400

10

V

V_C(100%) =

I _C(100%) =

400

10

V

A

35

ns

t_r

=

22

ns

Copyright Vincotech

21

15 Feb. 2019 / Revision 4

10-0B06PPA010RC-L025A09

datasheet

Inverter Switching Characteristics

figure 5.

FWD

figure 6.

FWD

Turn-off Switching Waveforms & definition of t_rr

Turn-on Switching Waveforms & definition of t_Qr(t_Qr= integrating time for Q_r)

%

Q_r

t_rr

t_Qr

I_F

fitted

I_{RRM 10%}

V_F

I_{RRM 90%}

I_{RRM 100%}

t (µs)

V_F(100%) =

I _F(100%) =

I _RRM(100%) =

400

10

V

I _F(100%) =

Q _r(100%) =

10

A

0,89

μC

10

A

t_rr

=

233

ns

Copyright Vincotech

22

15 Feb. 2019 / Revision 4

10-0B06PPA010RC-L025A09

datasheet

PFC Switching Characteristics

figure 1.

IGBT

figure 2.

IGBT

Typical switching energy losses as a function of collector current

Typical switching energy losses as a function of gate resistor

E = f(R _g)

E = f(I _C

)

1,6

E_on

E

E_on

1,2

E_on

0,8

0,4

0

0,8

0,4

0

E_off

0

10

20

30

40

50

60

0

20

40

60

25 °C

80

R_g(Ω)

I_C(A)

With an inductive load at

25 °C

With an inductive load at

V_CE

=

400

0 / 15

16

V

Ω

T_j:

V_CE

V_GE

I _C

=

400

0 / 15

30

V

A

T_j:

125 °C

150 °C

125 °C

150 °C

V_GE

R _gon

R _goff

16

figure 3.

FWD

figure 4.

FWD

Typical reverse recovered energy loss as a function of collector current

Typical reverse recovered energy loss as a function of gate resistor

E_rec= f(I _c)

E_rec= f(R _g)

0,8

E_rec

E

0,6

0,4

0,2

0

0,4

0,2

0

E_rec

0

20

40

60

80

0

10

20

30

40

50

60

I_C(A)

R_g(Ω)

With an inductive load at

25 °C

With an inductive load at

25 °C

V_CE

V_GE

=

400

0 / 15

16

V

Ω

T_j:

V_CE

V_GE

I _C

=

400

0 / 15

30

V

A

T_j:

125 °C

150 °C

125 °C

150 °C

R _gon

Copyright Vincotech

23

15 Feb. 2019 / Revision 4

10-0B06PPA010RC-L025A09

datasheet

PFC Switching Characteristics

figure 5.

IGBT

figure 6.

IGBT

Typical switching times as a function of collector current

Typical switching times as a function of gate resistor

t = f(I _C

)

t = f(R _g)

1

t_d(off)

t

t_d(off)

0,1

t_d(on)

t_r

t_d(on)

t_r

t_f

0,01

t_f

0,001

0

20

40

60

80

0

10

20

30

40

50

60

R_g(Ω)

I_C(A)

With an inductive load at

T_j=

150

400

0 / 15

16

°C

V

T_j=

150

400

°C

V

V_CE

=

V_CE

=

V_GE

R _gon

R _goff

V

V_GE

I _C

0 / 15

30

V

Ω

A

16

figure 7.

FWD

figure 8.

FWD

Typical reverse recovery time as a function of collector current

Typical reverse recovery time as a function of IGBT turn on gate resistor

t_rr= f(I _C

)

t_rr= f(R _gon)

0,15

0,16

t

t_rr

0,12

t_rr

0,12

t_rr

0,09

0,06

0,03

0

0,08

0,04

0

10

20

30

40

50

60

20

40

60

25 °C

80

R_gon(Ω)

I_C(A)

With an inductive load at

25 °C

With an inductive load at

V_CE

=

400

0 / 15

16

V

Ω

T_j:

V_CE

V_GE

I _C

=

400

0 / 15

30

V

A

T_j:

125 °C

150 °C

125 °C

150 °C

V_GE

R _gon

Copyright Vincotech

24

15 Feb. 2019 / Revision 4

10-0B06PPA010RC-L025A09

datasheet

PFC Switching Characteristics

figure 9.

FWD

figure 10.

FWD

Typical recovered charge as a function of collector current

Typical recovered charge as a function of IGBT turn on gate resistor

Q _r= f(I _C

)

Q _r= f(R _gon)

3

2,5

Q_r

Q

2,5

2

Q_r

2

1,5

1

1,5

1

Q_r

0,5

0

At

0

10

20

30

40

25 °C

50

60

20

40

60

25 °C

80

R_gon(Ω)

I_C(A)

With an inductive load at

V_CE

=

400

0 / 15

16

V

Ω

T_j:

V_CE=

V_GE=

I _C=

400

0 / 15

30

V

A

T_j:

125 °C

150 °C

125 °C

150 °C

V_GE

R _gon

figure 11.

FWD

figure 12.

FWD

Typical peak reverse recovery current current as a function of collector current

Typical peak reverse recovery current as a function of IGBT turn on gate resistor

I _RM= f(I _C

)

I _RM= f(R _gon)

50

60

I

I_RM

50

40

I_RM

40

30

20

10

30

20

10

I_RM

0

20

40

60

25 °C

80

R_{go n}(Ω)

10

20

30

40

25 °C

50

60

I_C(A)

With an inductive load at

V_CE

=

400

0 / 15

16

V

Ω

T_j:

V_CE

V_GE

I _C

=

400

0 / 15

30

V

A

T_j:

125 °C

150 °C

125 °C

150 °C

V_GE

R _gon

Copyright Vincotech

25

15 Feb. 2019 / Revision 4

10-0B06PPA010RC-L025A09

datasheet

PFC Switching Characteristics

figure 13.

FWD

figure 14.

FWD

Typical rate of fall of forward and reverse recovery current as a function of collector current

Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor

di _F/dt, di _rr/dt = f(I _C

)

di _F/dt, di _rr/dt = f(R _gon)

7000

4000

di_F/dt

di_{r r}/dt

di_F/dt

di_rr/dt

t

6000

i

3000

2000

1000

5000

4000

3000

2000

1000

0

20

40

60

80

R_gon(Ω)

10

20

30

40

50

60

I_C(A)

With an inductive load at

25 °C

With an inductive load at

25 °C

V_CE

=

400

0 / 15

16

V

Ω

T_j:

V_CE=

V_GE=

I _C=

400

0 / 15

30

V

T_j:

125 °C

150 °C

125 °C

150 °C

V_GE

V

A

R _gon

figure 15.

IGBT

Reverse bias safe operating area

I _C= f(V_CE

)

70

I_{C MAX}

I

60

I

50

40

30

20

10

0

I

V

0

100

200

300

400

500

600

700

V_{C E}(V)

At

T_j=

125

°C

Ω

R _gon

R _goff

=

16

Ω

Copyright Vincotech

26

15 Feb. 2019 / Revision 4

10-0B06PPA010RC-L025A09

datasheet

PFC Switching Definitions

General conditions

T _j

=

125 °C

R_gon

R_goff

16 Ω

figure 1.

IGBT

figure 2.

IGBT

Turn-off Switching Waveforms & definition of t_doff, t_Eoff(t_Eoff= integrating time for E_off

)

Turn-on Switching Waveforms & definition of t_don, t_Eon(t_Eon= integrating time for E_on)

t_doff

%

V_{GE 90%}

V_{CE 90%}

I_C

V_GE

V_CE

t_don

t_Eoff

I_{C 1%}

V_{CE 3%}

V_CE

I_{C 10%}

V_{GE 10%}

t_Eon

t (µs)

V_GE(0%) =

0

V

V_GE(0%) =

0

V

V_GE(100%) =

V_C(100%) =

I _C(100%) =

15

400

30

167

V

V_GE(100%) =

V_C(100%) =

I _C(100%) =

15

V

400

30

V

A

t_doff

=

ns

t_don

=

25

ns

figure 3.

IGBT

figure 4.

IGBT

Turn-off Switching Waveforms & definition of t_f

Turn-on Switching Waveforms & definition of t_r

fitted

%

I_C

I_{C 90%}

I_{C 60%}

I_{C 40%}

V_CE

I_{C 90%}

t_r

I_C10%

V_CE

I_{C 10%}

t_f

t (µs)

V_C(100%) =

I _C(100%) =

t_f=

400

30

V

V_C(100%) =

I _C(100%) =

400

30

V

A

12

ns

t_r

=

10

ns

Copyright Vincotech

27

15 Feb. 2019 / Revision 4

10-0B06PPA010RC-L025A09

datasheet

PFC Switching Characteristics

figure 5.

FWD

figure 6.

FWD

Turn-off Switching Waveforms & definition of t_rr

Turn-on Switching Waveforms & definition of t_Qr(t_Qr= integrating time for Q_r)

%

Q_r

t_rr

t_Qr

I_F

fitted

I_{RRM 10%}

V_F

I_{RRM 90%}

I_{RRM 100%}

t (µs)

V_F(100%) =

I _F(100%) =

I _RRM(100%) =

400

30

V

I _F(100%) =

Q _r(100%) =

30

0

A

μC

31

A

t_rr

=

90

ns

Copyright Vincotech

28

15 Feb. 2019 / Revision 4

10-0B06PPA010RC-L025A09

datasheet

Ordering Code & Marking

Version

without thermal paste 17mm housing with solder pins

with thermal paste 17mm housing with solder pins

Ordering Code

10-0B06PPA010RC-L025A09

10-0B06PPA010RC-L025A09-/3/

Name

Type&Ver

TTTTTTTVV

Serial

Date code

WWYY

VIN & Lot

Serial&UL

NN-NNNNNNNNNN

NNNN-TTTTTTTVV

VIN LLLLL

Text

NN-NNNNNNNNNNNNNN

VIN LLLLL

SSSS UL

Type&Ver

Lot number

Date code

WWYY

WWYY SSSS UL

Datamatrix

TTTTTTTVV

LLLLL

SSSS

Outline

Pin table

X

24,7

21,7

18,7

15

12

9

Y

0

3

Function

DC-Rect

1

2

DC-PFC

G27

3

4

DC-3

G15

5

6

DC-2

G13

7

6

8

3

DC-1

G11

9

0

10

0

Therm2

11

12

13

0

5,8

10,8

13,8

Therm1

G12

Ph1

14

15

16

17

18

19

20

21

22

5,7

8,7

13,8

10,8

9,3

G14

Ph2

14,4

19,7

22,9

27,9

23,05

Ph3

G16

DC+

13,8

6,95

PFC

ACIn1

ACIn2

DC+Rect

Copyright Vincotech

29

15 Feb. 2019 / Revision 4

10-0B06PPA010RC-L025A09

datasheet

Pinout

Identification

ID

Component

Voltage

Current

Function

Comment

D31, D32, D33, D34

Rectifier

1600 V

13 A

Rectifier Diode

T11, T12, T13, T14,

T15, T16

RC-IGBT

600 V

10 A

Inverter Switch

T27

D27

D47

Rt

IGBT

FWD

NTC

650 V

30 A

6 A

PFC Switch

PFC Diode

PFC Sw. Protection Diode

Thermistor

Copyright Vincotech

30

15 Feb. 2019 / Revision 4

10-0B06PPA010RC-L025A09

datasheet

Packaging instruction

Handling instruction

Standard packaging quantity (SPQ) 160

>SPQ

Standard

<SPQ

Sample

Handling instructions for flow0 B packages see vincotech.com website.

Package data

Package data for flow0 B packages see vincotech.com website.

UL recognition and file number

This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.

Document No.:

Date:

Modification:

Pages

PCN implementation: IFX Rapid1-> Rapid1Solar

PCN implementation: Tateyama NTC

6,7,15,23-28

8,16

10-0B06PPA010RC-L025A09-D4-14

15 Feb. 2019

DISCLAIMER

The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to

reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations

that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,

function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said

information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons

or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine

the suitability of the information and the product for reader’s intended use.

LIFE SUPPORT POLICY

Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval

of Vincotech.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or

sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be

reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause

the failure of the life support device or system, or to affect its safety or effectiveness.

Copyright Vincotech

31

15 Feb. 2019 / Revision 4


型号：	10-0B06PPA010RC-L025A09
厂家：	VINCOTECH
描述：	Optimised collector emitter saturation voltage and forward voltage for low conduction losses;Reverse conductive IGBT technology;Smooth switching performance leading to low EMI levels 双极性晶体管
文件：	总31页 (文件大小：3478K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

10-0B06PPA010RC-L025A09 [VINCOTECH]

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