10-0B06PPA010RC02-L025A89 [VINCOTECH]
Optimised collector emitter saturation voltage and forward voltage for low conduction losses;Reverse conductive IGBT technology;Smooth switching performance leading to low EMI levels;型号: | 10-0B06PPA010RC02-L025A89 |
厂家: | VINCOTECH |
描述: | Optimised collector emitter saturation voltage and forward voltage for low conduction losses;Reverse conductive IGBT technology;Smooth switching performance leading to low EMI levels 双极性晶体管 |
文件: | 总31页 (文件大小:3410K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
10-0B06PPA010RC02-L025A89
datasheet
flowPIM 0B + PFC
600 V / 10 A
Features
flow 0B 17mm housing
● Converter, PFC, inverter in one housing
● New RGW IGBT for PFC
● One screw heatsink mounting
Schematic
Target applications
● Embedded Drives
● Industrial Drives
Types
● 10-0B06PPA010RC02-L025A89
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Switch
VCES
IC
Collector-emitter voltage
600
15
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
Ptot
VGES
tSC
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
30
A
44
W
V
±20
5
Short circuit ratings
VGE = 15 V
Vcc = 400 V
µs
°C
Tjmax
Maximum junction temperature
175
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datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
PFC Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
650
36
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
120
66
A
W
V
±30
175
Maximum junction temperature
°C
PFC Diode
VRRM
IF
Peak repetitive reverse voltage
650
15
V
A
Continuous (direct) forward current
Repetitive peak forward current
Surge (non-repetitive) forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
IFRM
IFSM
Ptot
35
A
60 Hz Single Half Sine Wave
tp = 8,3 ms
31
A
Tj = Tjmax
Ts = 80 °C
34
W
°C
Tjmax
Maximum junction temperature
175
PFC Sw. Protection Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
650
12
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
12
A
Tj = Tjmax
32
W
°C
Tjmax
Maximum junction temperature
175
Rectifier Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1600
13
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
60 Hz Single Half Sine Wave
Tj = Tjmax
150
34
A
W
°C
Tjmax
Maximum junction temperature
150
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Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
min 12,7
min 12,7
> 200
mm
mm
Clearance
Comparative Tracking Index
*100 % tested in production
CTI
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,00017 25
25
4,4
5
5,6
V
V
1,88
2,19
2,28
2,30
2,62
VCEsat
Collector-emitter saturation voltage
15
10
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
600
0
25
25
2
µA
nA
Ω
20
120
none
655
37
Cies
Coes
Cres
Qg
Output capacitance
f = 1 Mhz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
22
15
480
10
64
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
2,15
K/W
Dynamic
25
125
25
125
25
125
25
125
25
125
25
125
74
71
18
22
97
105
5
35
0,244
0,357
0,122
0,181
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Rgon = 32 Ω
Rgoff = 32 Ω
ns
Turn-off delay time
Fall time
±15
400
10
Qr
Qr
= 0,5 μC
= 0,9 μC
FWD
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
FWD
mWs
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Diode
Static
25
2,16
2,04
2,02
2,42
Forward voltage
VF
10
125
150
V
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
2,15
K/W
Dynamic
25
125
25
125
25
125
25
125
25
125
7
10
174
233
0,451
0,893
0,121
0,243
93
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
trr
Qr
ns
di/dt = 452 A/μs
di/dt = 483 A/μs
±15
400
10
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
83
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
PFC Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = 5 V
0,02
30
25
5
6
7
V
V
25
1,44
1,60
1,63
1,9
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
10
µA
nA
Ω
30
200
none
2530
65
Cies
Coes
Cres
Qg
Output capacitance
f = 1 Mhz
0
30
25
25
pF
Reverse transfer capacitance
Gate charge
46
15
400
30
84
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,45
K/W
Dynamic
25
17
16
16
td(on)
125
150
25
Turn-on delay time
22
tr
Rise time
125
150
25
22
22
68
Rgon = 8 Ω
Rgoff = 8 Ω
ns
td(off)
Turn-off delay time
Fall time
125
150
25
125
150
25
125
150
25
79
81
32
40
0 / 15
400
30
tf
50
0,368
0,369
0,379
0,385
0,521
Qr
FWD
Qr
FWD
Qr
FWD
= 0 μC
= 0,1 μC
= 0,1 μC
Eon
Turn-on energy (per pulse)
mWs
125
Eoff
Turn-off energy (per pulse)
150
0,557
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
PFC Diode
Static
25
1,37
1,55
1,63
1,55
160
VF
IR
125
150
Forward voltage
8
V
Reverse leakage current
650
25
1,6
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
2,80
K/W
Dynamic
25
3
IRRM
125
150
25
4
4
10
Peak recovery current
A
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
10
10
ns
di/dt = 681 A/μs
di/dt = 466 A/μs
di/dt = 1361 A/μs
0,034
0,080
0,067
0,004
0,021
0,016
1135
1398
1248
0 / 15
400
30
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
PFC Sw. Protection Diode
Static
25
1,73
1,59
1,54
1,87
0,1
VF
IR
125
150
Forward voltage
6
V
Reverse leakage current
650
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
3,01
K/W
Rectifier Diode
Static
25
1,04
0,97
1,14
20
VF
IR
Forward voltage
Reverse leakage current
Thermal
7
V
125
1600
25
µA
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
2,09
22
K/W
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1484 Ω
-5
5
5
mW
mW/K
K
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech NTC Reference
I
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datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
35
45
VGE
:
7
V
V
V
I
40
I
8
9
30
25
20
15
10
5
10
11
12
13
14
15
16
17
V
V
V
V
V
V
V
V
35
30
25
20
15
10
5
0
0
0
0
0,5
1
1,5
2
2,5
3
3,5
4
4,5
5
1
2
3
4
5
VC E (V)
VC E (V)
tp
=
250
15
μs
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
7 V to 17 V in steps of 1 V
μs
VGE
=
V
Tj:
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
101
10
I
8
Z
100
6
4
2
0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
10-5
0
0
10-4
10-3
10-2
10-1
100
101
tp(s)
102
2
4
6
8
10
12
VG E (V)
tp
=
100
10
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
V
Tj:
=
2,15
K/W
IGBT thermal model values
R (K/W)
τ (s)
7,60E-02
1,59E-01
1,01E+00
6,48E-01
2,57E-01
2,82E+00
4,19E-01
6,63E-02
2,63E-02
3,72E-03
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Inverter Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G
)
I C = f(VCE)
16
100
120 V
10ms
V
I
1ms
10µs
100µs
14
100ms
DC
12
10
8
10
480 V
1
6
4
0,1
2
0
0
0,01
1
10
20
30
40
50
60
70
10
100
1000
VC E (V)
QG (nC)
D =
single pulse
80 ºC
I C
=
10
A
Ts
=
VGE
=
±15
V
Tj =
Tjmax
figure 7.
IGBT
figure 8.
IGBT
Short circuit duration as a function of VGE
Typical short circuit current as a function of VGE
tpSC = f(VGE
)
I SC = f(VGE)
10
160
9
I
t
140
8
7
6
5
4
3
2
1
120
100
80
60
40
20
0
0
12
13
14
15
16
17
18
19
20
12
13
14
15
16
17
VG E (V)
VG E (V)
VCE
=
VCE
≤
400
150
V
ºC
400
25
V
ºC
Tj ≤
Tj ≤
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datasheet
Inverter Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
45
40
35
30
25
20
15
10
5
Z
100
0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
0
10-4
10-3
10-2
10-1
100
101
102
tp (s)
0
1
2
3
4
5
VF (V)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
2,15
Tj:
R th(j-s)
=
K/W
FWD thermal model values
R (K/W)
τ (s)
7,60E-02
1,59E-01
1,01E+00
6,48E-01
2,57E-01
2,82E+00
4,19E-01
6,63E-02
2,63E-02
3,72E-03
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PFC Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
100
100
VGE
:
7
8
9
V
V
V
I
I
80
60
40
20
0
10
11
12
13
14
15
16
17
V
V
V
V
V
V
V
V
80
60
40
20
0
0
0
1
2
3
4
5
1
2
3
4
5
VC E (V)
VC E (V)
tp
=
250
15
μs
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
μs
°C
VGE
=
V
Tj:
VGE from
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
101
30
I
25
Z
100
20
15
10
5
0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
10-5
0
4
10-4
10-3
10-2
10-1
100
101
tp(s)
102
5
6
7
8
9
VG E (V)
tp
=
100
10
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
V
Tj:
=
1,45
K/W
IGBT thermal model values
R (K/W)
τ (s)
8,75E-02
3,44E-01
7,98E-01
1,42E-01
7,56E-02
1,18E+00
1,24E-01
3,49E-02
4,89E-03
6,91E-04
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PFC Switch Characteristics
figure 5.
IGBT
Safe operating area
I C = f(VCE
)
1000
I
100
10
1
0,1
0,01
1
10
100
1000
VC E (V)
D =
single pulse
80 ºC
Ts
=
VGE
=
±15
V
Tj =
Tjmax
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PFC Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
24
20
16
12
8
100
Z
10-1
10-2
10-3
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
4
0
10-5
10-4
10-3
10-2
10-1
100
101
102
tp (s)
0
1
2
3
4
5
VF (V)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
Tj:
R th(j-s)
=
2,80
K/W
FWD thermal model values
R (K/W)
τ (s)
5,38E-02
1,47E-01
1,06E+00
8,73E-01
6,63E-01
3,99E+00
5,17E-01
5,71E-02
1,18E-02
2,38E-03
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PFC Sw. Protection Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
18
15
12
9
Z
100
0,5
10-1
6
0,2
0,1
0,05
0,02
0,01
0,005
0
3
10-2
0
0
10-4
10-3
10-2
10-1
100
101
102
tp (s)
1
2
3
VF (V)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
3,01
Tj:
R th(j-s)
=
K/W
FWD thermal model values
R (K/W)
τ (s)
5,15E-02
9,53E-02
3,22E-01
1,35E+00
8,32E-01
3,58E-01
9,38E+00
8,91E-01
1,25E-01
2,97E-02
8,19E-03
1,78E-03
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datasheet
Rectifier Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
21
18
15
12
9
Z
10-1
0,5
0,2
6
0,1
0,05
0,02
0,01
0,005
0
3
10-2
0
10-4
10-3
10-2
10-1
100
101
102
tp (s)
0
0,5
1
1,5
2
2,5
3
VF (V)
tp
=
250
μs
25 °C
D =
tp / T
2,09
Tj:
125 °C
R th(j-s)
=
K/W
FWD thermal model values
R (K/W)
τ (s)
4,86E-02
1,45E-01
1,18E+00
5,40E-01
1,74E-01
1,03E+01
6,91E-01
6,09E-02
1,88E-02
1,96E-03
Thermistor Characteristics
figure 1.
Thermistor
Typical Thermistor resistance values
Typical NTC characteristic as a function of temperature
as a function of temperature
R = f(T)
NTC-typical temperature characteristic
25000
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
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Inverter Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
0,8
0,8
E
E
Eon
Eon
0,6
0,6
Eon
Eon
0,4
0,2
0
0,4
0,2
0
Eoff
Eoff
Eoff
Eoff
0
4
8
12
16
20
0
40
80
120
160
Rg (Ω)
IC (A)
With an inductive load at
25 °C
With an inductive load at
25 °C
125 °C
Tj:
Tj:
VCE
=
=
=
=
400
±15
32
V
V
Ω
Ω
VCE
VGE
I C
=
=
=
400
±15
10
V
V
A
125 °C
VGE
R gon
R goff
32
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
0,3
0,4
E
E
0,25
Erec
0,3
Erec
0,2
0,15
0,1
0,05
0
0,2
0,1
0
Erec
Erec
0
40
80
120
160
Rg (Ω)
0
4
8
12
16
20
I C (A)
With an inductive load at
25 °C
With an inductive load at
25 °C
Tj:
Tj:
VCE
=
=
=
400
±15
32
V
V
Ω
VCE
VGE
I C
=
=
=
400
±15
10
V
V
A
125 °C
125 °C
VGE
R gon
Copyright Vincotech
17
23 Mar. 2021 / Revision 4
10-0B06PPA010RC02-L025A89
datasheet
Inverter Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
1
1
t
t
td(off)
td(on)
td(off)
0,1
0,1
td(on)
tr
tr
tf
tf
0,01
0,01
0,001
0,001
0
40
80
120
160
0
4
8
12
16
20
Rg (Ω)
IC (A)
With an inductive load at
With an inductive load at
Tj =
125
400
±15
32
°C
V
Tj =
125
400
±15
10
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
32
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon)
0,3
0,4
trr
t
t
trr
0,25
0,3
trr
0,2
0,15
0,1
0,05
0
trr
0,2
0,1
0
0
0
4
8
12
16
20
40
80
120
160
Rgon (Ω)
IC (A)
With an inductive load at
25 °C
With an inductive load at
25 °C
125 °C
Tj:
Tj:
VCE
=
=
=
400
±15
32
V
V
Ω
VCE
VGE
I C
=
=
=
400
±15
10
V
V
A
125 °C
VGE
R gon
Copyright Vincotech
18
23 Mar. 2021 / Revision 4
10-0B06PPA010RC02-L025A89
datasheet
Inverter Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
1,6
1,2
Q
Q
Qr
1,2
0,9
Qr
0,8
0,4
0,6
0,3
Qr
Qr
0
0
0
0
4
8
12
16
20
40
80
120
160
Rgon (Ω)
IC (A)
With an inductive load at
25 °C
With an inductive load at
25 °C
125 °C
Tj:
Tj:
VCE
=
=
=
400
±15
32
V
V
Ω
VCE=
VGE =
I C=
400
±15
10
V
V
A
125 °C
VGE
R gon
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
12
20
IRM
I
I
9
15
IRM
10
5
6
3
IRM
IRM
0
0
0
0
40
80
120
160
Rgo n (Ω)
4
8
12
16
20
IC (A)
With an inductive load at
25 °C
With an inductive load at
25 °C
125 °C
Tj:
Tj:
VCE
=
=
=
400
±15
32
V
V
Ω
VCE
VGE
I C
=
=
=
400
±15
10
V
V
A
125 °C
VGE
R gon
Copyright Vincotech
19
23 Mar. 2021 / Revision 4
10-0B06PPA010RC02-L025A89
datasheet
Inverter Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
2000
700
diF/dt
diF/dt
dir r/dt
dirr/dt
t
t
600
i
i
1500
1000
500
500
400
300
200
100
0
0
0
0
40
80
120
160
Rgon (Ω)
4
8
12
16
20
IC (A)
With an inductive load at
25 °C
With an inductive load at
25 °C
125 °C
Tj:
Tj:
VCE
=
=
=
400
±15
32
V
V
Ω
VCE =
VGE =
I C=
400
±15
10
V
125 °C
VGE
V
A
R gon
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
25
I
IC MAX
20
I
15
10
5
I
V
0
0
100
200
300
400
500
600
700
VC E (V)
At
Tj =
125
°C
Ω
R gon
R goff
=
=
32
32
Ω
Copyright Vincotech
20
23 Mar. 2021 / Revision 4
10-0B06PPA010RC02-L025A89
datasheet
Inverter Switching Definitions
General conditions
T j
=
=
=
125 °C
Rgon
Rgoff
32 Ω
32 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
%
%
VGE 90%
VCE 90%
IC
IC
VGE
VGE
VCE
tdon
tEoff
IC 1%
VCE 3%
VCE
IC 10%
VGE 10%
tEon
t (µs)
t (µs)
VGE (0%) =
-15
15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
400
10
V
400
10
V
A
A
tdoff
=
105
ns
tdon
=
71
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
fitted
%
%
IC
IC
IC 90%
IC 60%
IC 40%
VCE
IC 90%
tr
IC10%
VCE
IC 10%
tf
t (µs)
t (µs)
VC (100%) =
I C (100%) =
tf =
400
10
V
VC (100%) =
I C (100%) =
400
10
V
A
A
35
ns
tr
=
22
ns
Copyright Vincotech
21
23 Mar. 2021 / Revision 4
10-0B06PPA010RC02-L025A89
datasheet
Inverter Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
%
%
Qr
trr
tQr
IF
IF
fitted
IRRM 10%
VF
IRRM 90%
IRRM 100%
t (µs)
t (µs)
VF (100%) =
I F (100%) =
I RRM (100%) =
400
10
V
I F (100%) =
Q r (100%) =
10
A
A
0,89
μC
10
A
trr
=
233
ns
Copyright Vincotech
22
23 Mar. 2021 / Revision 4
10-0B06PPA010RC02-L025A89
datasheet
PFC Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
1,2
0,8
Eon
E
E
Eon
Eon
Eoff
Eoff
Eon
Eon
Eon
0,9
0,6
Eoff
Eoff
Eoff
Eoff
0,6
0,3
0
0,4
0,2
0
0
15
30
45
25 °C
60
0
10
20
30
25 °C
40
Rg (Ω)
IC (A)
With an inductive load at
With an inductive load at
VCE
=
=
=
=
400
0 / 15
8
V
V
Ω
Ω
Tj:
VCE
VGE
I C
=
=
=
400
0 / 15
30
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
R goff
8
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
0,025
0,05
E
Erec
E
0,02
0,04
Erec
Erec
Erec
0,015
0,01
0,005
0
0,03
0,02
0,01
0
Erec
Erec
0
10
20
30
40
0
15
30
45
60
I C (A)
Rg (Ω)
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
400
0 / 15
8
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
400
0 / 15
30
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
23
23 Mar. 2021 / Revision 4
10-0B06PPA010RC02-L025A89
datasheet
PFC Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
1
1
t
t
td(off)
0,1
0,1
td(off)
tf
tf
tr
tr
td(on)
0,01
0,01
td(on)
0,001
0,001
0
10
20
30
40
0
15
30
45
60
Rg (Ω)
IC (A)
With an inductive load at
With an inductive load at
Tj =
150
400
0 / 15
8
°C
V
Tj =
150
400
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
0 / 15
30
V
Ω
Ω
A
8
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon)
0,03
0,015
t
t
trr
trr
trr
trr
0,02
0,01
trr
trr
0,01
0,005
0
0
0
0
15
30
45
60
10
20
30
25 °C
40
Rgon (Ω)
IC (A)
With an inductive load at
25 °C
With an inductive load at
VCE
=
=
=
400
0 / 15
8
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
400
0 / 15
30
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
Copyright Vincotech
24
23 Mar. 2021 / Revision 4
10-0B06PPA010RC02-L025A89
datasheet
PFC Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
0,2
0,1
Q
Q
0,08
0,15
Qr
Qr
Qr
Qr
0,06
0,04
0,02
0,1
Qr
Qr
0,05
0
0
0
0
15
30
45
25 °C
60
10
20
30
25 °C
40
Rgon (Ω)
IC (A)
With an inductive load at
With an inductive load at
VCE
=
=
=
400
0 / 15
8
V
V
Ω
Tj:
VCE=
VGE =
I C=
400
0 / 15
30
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
6
8
I
I
4,5
6
IRM
IRM
IRM
4
2
3
IRM
IRM
IRM
1,5
0
0
0
0
10
20
30
25 °C
40
Rgo n (Ω)
15
30
45
25 °C
60
IC (A)
With an inductive load at
With an inductive load at
VCE
=
=
=
400
0 / 15
8
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
400
0 / 15
30
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
Copyright Vincotech
25
23 Mar. 2021 / Revision 4
10-0B06PPA010RC02-L025A89
datasheet
PFC Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
4000
2500
diF/dt
dir r/dt
diF/dt
dirr/dt
t
t
i
i
2000
3000
2000
1000
1500
1000
500
0
0
0
0
10
20
30
40
Rgon (Ω)
15
30
45
60
IC (A)
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
=
=
=
400
0 / 15
8
V
V
Ω
Tj:
VCE =
VGE =
I C=
400
0 / 15
30
V
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
V
A
R gon
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
70
IC MAX
I
60
I
50
40
30
20
10
0
I
V
0
100
200
300
400
500
600
700
VC E (V)
At
Tj =
125
°C
Ω
R gon
R goff
=
=
8
8
Ω
Copyright Vincotech
26
23 Mar. 2021 / Revision 4
10-0B06PPA010RC02-L025A89
datasheet
PFC Switching Definitions
General conditions
T j
=
=
=
125 °C
Rgon
Rgoff
8 Ω
8 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
%
%
VGE 90%
VCE 90%
IC
IC
VGE
VGE
VCE
tdon
tEoff
IC 1%
VCE 3%
VCE
IC 10%
VGE 10%
tEon
t (µs)
t (µs)
VGE (0%) =
0
V
VGE (0%) =
0
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
400
30
79
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
V
400
30
V
A
A
tdoff
=
ns
tdon
=
16
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
fitted
%
%
IC
IC
IC 90%
IC 60%
IC 40%
VCE
IC 90%
tr
IC10%
VCE
IC 10%
tf
t (µs)
t (µs)
VC (100%) =
I C (100%) =
tf =
400
30
V
VC (100%) =
I C (100%) =
400
30
V
A
A
40
ns
tr
=
22
ns
Copyright Vincotech
27
23 Mar. 2021 / Revision 4
10-0B06PPA010RC02-L025A89
datasheet
PFC Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
%
%
Qr
trr
tQr
IF
IF
fitted
IRRM 10%
VF
IRRM 90%
IRRM 100%
t (µs)
t (µs)
VF (100%) =
I F (100%) =
I RRM (100%) =
400
30
4
V
I F (100%) =
Q r (100%) =
30
A
A
0,08
μC
A
trr
=
10
ns
Copyright Vincotech
28
23 Mar. 2021 / Revision 4
10-0B06PPA010RC02-L025A89
datasheet
Ordering Code & Marking
Version
without thermal paste 17mm housing with solder pins
with thermal paste 17mm housing with solder pins
Ordering Code
10-0B06PPA010RC02-L025A89
10-0B06PPA010RC02-L025A89-/3/
Name
Type&Ver
TTTTTTTVV
Serial
Date code
WWYY
VIN & Lot
Serial&UL
NN-NNNNNNNNNN
NNNN-TTTTTTTVV
VIN LLLLL
Text
NN-NNNNNNNNNNNNNN
VIN LLLLL
SSSS UL
Type&Ver
Lot number
LLLLL
Date code
WWYY
WWYY SSSS UL
Datamatrix
TTTTTTTVV
SSSS
Outline
Pin table
Pin
X
24,7
21,7
18,7
15
12
9
Y
0
0
0
0
0
0
0
0
0
3
Function
DC-Rect
1
2
DC-PFC
G27
3
4
DC-3
G15
5
6
DC-2
G13
7
6
8
3
DC-1
G11
9
0
10
0
Therm2
11
12
13
0
0
0
5,8
10,8
13,8
Therm1
G12
Ph1
14
15
16
17
18
19
20
21
22
5,7
8,7
13,8
13,8
13,8
10,8
9,3
G14
Ph2
14,4
14,4
19,7
22,9
27,9
27,9
23,05
Ph3
G16
DC+
13,8
13,8
6,95
6,95
PFC
ACIn1
ACIn2
DC+Rect
Copyright Vincotech
29
23 Mar. 2021 / Revision 4
10-0B06PPA010RC02-L025A89
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
D31, D32, D33, D34
Rectifier
1600 V
12 A
Rectifier Diode
T11, T12, T13, T14,
T15, T16
RC-IGBT
600 V
10 A
Inverter Switch
T27
D27
D47
Rt
IGBT
FWD
FWD
NTC
650 V
650 V
650 V
30 A
8 A
PFC Switch
PFC Diode
6 A
PFC Sw. Protection Diode
Thermistor
Copyright Vincotech
30
23 Mar. 2021 / Revision 4
10-0B06PPA010RC02-L025A89
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 160
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow0 B packages see vincotech.com website.
Package data
Package data for flow0 B packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-0B06PPA010RC02-L025A89-D4-14
23 Mar. 2021
Update Thermistor
8, 16
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
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23 Mar. 2021 / Revision 4
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