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10-E2126PA075M701-L197F73Z [VINCOTECH]

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;
10-E2126PA075M701-L197F73Z
型号： 10-E2126PA075M701-L197F73Z
厂家： VINCOTECH    VINCOTECH
描述：

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
文件： 总18页 (文件大小：6813K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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10-E2126PA075M701-L197F73Z  
datasheet  
flowPACK E2  
1200 V / 75 A  
Topology features  
flow E2 12 mm housing  
● Inverter  
● Open Emitter configuration  
● Temperature sensor  
Component features  
● Easy paralleling  
● Low turn-off losses  
● Low collector emitter saturation voltage  
● Positive temperature coefficient  
● Short tail current  
● Switching optimized for EMC  
Housing features  
● Base isolation: Al2O3  
● Convex shaped substrate for superior thermal contact  
● Compact housing  
Schematic  
● CTI600 housing material  
● Thermo-mechanical push-and-pull force relief  
● Solder pin  
Target applications  
● Industrial Drives  
Types  
● 10-E2126PA075M701-L197F73Z  
Copyright Vincotech  
1
26 Oct. 2022 / Revision 1  
10-E2126PA075M701-L197F73Z  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
Inverter Switch  
VCES  
Collector-emitter voltage  
1200  
84  
V
A
IC  
Collector current (DC current)  
Repetitive peak collector current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
ICRM  
tp limited by Tjmax  
Tj = Tjmax  
150  
159  
±20  
175  
A
Ptot  
W
V
VGES  
Gate-emitter voltage  
Tjmax  
Maximum junction temperature  
°C  
Inverter Diode  
VRRM  
Peak repetitive reverse voltage  
1200  
48  
V
A
IF  
Forward current (DC current)  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
IFRM  
tp limited by Tjmax  
Tj = Tjmax  
100  
87  
A
Ptot  
W
°C  
Tjmax  
Maximum junction temperature  
175  
Module Properties  
Thermal Properties  
Tstg  
Tjop  
Storage temperature  
-40…+125  
°C  
°C  
Operation temperature under switching  
condition  
-40…+(Tjmax - 25)  
Isolation Properties  
Isolation voltage  
Isolation voltage  
Creepage distance  
Clearance  
Visol  
Visol  
DC Test Voltage*  
AC Voltage  
tp = 2 s  
6000  
2500  
V
tp = 1 min  
V
>12,7  
10,11  
≥ 200  
mm  
mm  
Comparative Tracking Index  
*100 % tested in production  
CTI  
Copyright Vincotech  
2
26 Oct. 2022 / Revision 1  
10-E2126PA075M701-L197F73Z  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Inverter Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
10  
0,0075  
75  
25  
5,4  
6
6,6  
V
V
25  
1,55  
1,7  
1,9(1)  
VCEsat  
Collector-emitter saturation voltage  
15  
125  
150  
1,75  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
1200  
0
25  
25  
100  
500  
µA  
nA  
Ω
20  
4
Cies  
Coes  
Cres  
Qg  
16000  
480  
pF  
pF  
pF  
nC  
Output capacitance  
0
10  
25  
25  
Reverse transfer capacitance  
Gate charge  
190  
VCC = 600 V  
0/15  
75  
570  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,6  
K/W  
25  
254,81  
261,07  
262,49  
81,45  
88,33  
90,32  
211,21  
241,57  
250,11  
78,15  
99,67  
104,36  
8,11  
td(on)  
Turn-on delay time  
Rise time  
125  
150  
25  
ns  
ns  
tr  
125  
150  
25  
Rgon = 4 Ω  
Rgoff = 4 Ω  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
ns  
±15  
600  
75  
tf  
125  
150  
25  
ns  
QrFWD=4,63 µC  
QrFWD=7,2 µC  
QrFWD=8,15 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
125  
150  
25  
9,96  
mWs  
mWs  
10,57  
5,33  
Eoff  
125  
150  
7,21  
7,9  
Copyright Vincotech  
3
26 Oct. 2022 / Revision 1  
10-E2126PA075M701-L197F73Z  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Inverter Diode  
Static  
25  
1,66  
1,78  
1,79  
2,1(1)  
VF  
IR  
Forward voltage  
50  
125  
150  
V
Reverse leakage current  
Thermal  
Vr = 1200 V  
25  
40  
µA  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
1,09  
K/W  
25  
28,81  
32,48  
34,16  
328,34  
471,19  
518,84  
4,63  
IRM  
Peak recovery current  
125  
150  
25  
A
trr  
Reverse recovery time  
125  
150  
25  
ns  
di/dt=655 A/µs  
di/dt=634 A/µs  
di/dt=613 A/µs  
Qr  
Recovered charge  
±15  
600  
75  
125  
150  
25  
7,2  
μC  
8,15  
1,6  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
125  
150  
25  
2,73  
mWs  
A/µs  
3,16  
210,73  
140,49  
143,43  
(dirf/dt)max  
125  
150  
Copyright Vincotech  
4
26 Oct. 2022 / Revision 1  
10-E2126PA075M701-L197F73Z  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
VGE [V]  
VGS [V]  
Min  
Max  
Thermistor  
Static  
R
ΔR/R  
P
Rated resistance  
Deviation of R100  
Power dissipation  
Power dissipation constant  
B-value  
25  
5
kΩ  
%
R100 = 493 Ω  
100  
-5  
5
245  
1,4  
mW  
mW/K  
K
d
25  
B(25/50)  
Tol. ±2 %  
Tol. ±2 %  
3375  
3437  
B(25/100)  
B-value  
K
Vincotech Thermistor Reference  
K
(1)  
Value at chip level  
(2)  
Only valid with pre-applied Vincotech thermal interface material.  
Copyright Vincotech  
5
26 Oct. 2022 / Revision 1  
10-E2126PA075M701-L197F73Z  
datasheet  
Inverter Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
IC = f(VCE  
)
IC = f(VCE)  
200  
200  
VGE  
:
7 V  
8 V  
9 V  
10 V  
11 V  
12 V  
13 V  
14 V  
15 V  
16 V  
17 V  
150  
100  
50  
150  
100  
50  
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V
CE(V)  
VCE(V)  
tp  
=
=
tp  
=
250  
15  
μs  
V
250  
150  
μs  
°C  
25 °C  
VGE  
Tj =  
125 °C  
150 °C  
Tj:  
VGE from 7 V to 17 V in steps of 1 V  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as a function of pulse width  
IC = f(VGE  
)
Zth(j-s) = f(tp)  
0
70  
10  
60  
50  
40  
30  
20  
10  
0
-1  
10  
-2  
10  
0,5  
0,2  
0,1  
-3  
10  
0,05  
0,02  
0,01  
0,005  
0
-4  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
10  
1
10  
2
0,0  
2,5  
5,0  
7,5  
10,0  
12,5  
10  
10  
tp(s)  
V
GE(V)  
tp  
=
=
250  
10  
μs  
V
D =  
tp / T  
0,597  
25 °C  
VCE  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
3,57E-02  
1,13E-01  
3,25E-01  
9,57E-02  
2,68E-02  
3,51E+00  
5,67E-01  
8,75E-02  
1,86E-02  
1,19E-03  
Copyright Vincotech  
6
26 Oct. 2022 / Revision 1  
10-E2126PA075M701-L197F73Z  
datasheet  
Inverter Switch Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Safe operating area  
Gate voltage vs gate charge  
IC = f(VCE  
)
VGE = f(Qg)  
1000  
17,5  
15,0  
12,5  
10,0  
7,5  
100  
10  
100µs  
1ms  
1
10ms  
5,0  
100ms  
DC  
0,1  
0,01  
2,5  
0,0  
1
10  
100  
1000  
10000  
0
100  
200  
300  
400  
500  
600  
V
CE(V)  
Qg(μC)  
D =  
IC  
=
single pulse  
75  
25  
A
Ts =  
Tj =  
80  
15  
°C  
V
°C  
VGE  
=
Tj =  
Tjmax  
Copyright Vincotech  
7
26 Oct. 2022 / Revision 1  
10-E2126PA075M701-L197F73Z  
datasheet  
Inverter Diode Characteristics  
figure 7.  
FWD  
figure 8.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
1
150  
125  
100  
75  
10  
0
10  
-1  
10  
50  
0,5  
0,2  
0,1  
-2  
10  
0,05  
0,02  
0,01  
0,005  
0
25  
-3  
0
0,0  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
10  
10  
10  
10  
tp(s)  
VF(V)  
tp  
=
250  
μs  
D =  
tp / T  
1,094  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
4,05E-02  
8,82E-02  
2,80E-01  
4,48E-01  
1,45E-01  
9,23E-02  
7,09E+00  
9,93E-01  
1,18E-01  
3,26E-02  
5,44E-03  
5,22E-04  
Copyright Vincotech  
8
26 Oct. 2022 / Revision 1  
10-E2126PA075M701-L197F73Z  
datasheet  
Thermistor Characteristics  
figure 9.  
Thermistor  
Typical NTC characteristic as function of temperature  
RT = f(T)  
6000  
5000  
4000  
3000  
2000  
1000  
0
20  
40  
60  
80  
100  
120  
140  
T(°C)  
Copyright Vincotech  
9
26 Oct. 2022 / Revision 1  
10-E2126PA075M701-L197F73Z  
datasheet  
Inverter Switching Characteristics  
figure 10.  
IGBT  
figure 11.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of IGBT turn on gate resistor  
E = f(IC)  
E = f(Rg)  
35  
30  
25  
20  
15  
10  
5
17,5  
15,0  
12,5  
10,0  
7,5  
Eon  
Eon  
Eon  
Eon  
Eon  
Eon  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
5,0  
Eoff  
2,5  
0
0,0  
0,0  
0
25  
50  
75  
100  
125  
150  
IC(A)  
2,5  
5,0  
7,5  
10,0  
12,5  
15,0  
17,5  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
=
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
±15  
4
V
V
Ω
Ω
125 °C  
150 °C  
600  
±15  
75  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
Rgon  
Rgoff  
4
figure 12.  
FWD  
figure 13.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor  
Erec = f(IC)  
Erec = f(Rg)  
3,5  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
4,0  
3,5  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
Erec  
Erec  
Erec  
Erec  
Erec  
Erec  
0
25  
50  
75  
100  
125  
150  
0,0  
2,5  
5,0  
7,5  
10,0  
12,5  
15,0  
17,5  
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
±15  
4
V
V
Ω
125 °C  
150 °C  
600  
±15  
75  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
Copyright Vincotech  
10  
26 Oct. 2022 / Revision 1  
10-E2126PA075M701-L197F73Z  
datasheet  
Inverter Switching Characteristics  
figure 14.  
IGBT  
figure 15.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of IGBT turn on gate resistor  
t = f(IC)  
t = f(Rg)  
0
10  
0
10  
td(on)  
td(off)  
td(on)  
td(off)  
tr  
tr  
tf  
-1  
10  
-1  
10  
tf  
-2  
10  
-2  
10  
0
25  
50  
75  
100  
125  
150  
IC(A)  
0,0  
2,5  
5,0  
7,5  
10,0  
12,5  
15,0  
17,5  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
150  
600  
±15  
4
°C  
V
150  
600  
±15  
75  
°C  
VCE  
=
=
=
=
VCE  
=
=
=
V
V
A
VGE  
Rgon  
Rgoff  
VGE  
IC  
V
Ω
Ω
4
figure 16.  
FWD  
figure 17.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
trr = f(IC)  
trr = f(Rgon)  
0,8  
0,7  
0,6  
0,5  
0,4  
0,3  
0,2  
0,1  
0,0  
0,7  
0,6  
0,5  
0,4  
0,3  
0,2  
0,1  
0,0  
trr  
trr  
trr  
trr  
trr  
trr  
0
25  
50  
75  
100  
125  
150  
0,0  
2,5  
5,0  
7,5  
10,0  
12,5  
15,0  
17,5  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
±15  
4
V
V
Ω
125 °C  
150 °C  
600  
±15  
75  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
Copyright Vincotech  
11  
26 Oct. 2022 / Revision 1  
10-E2126PA075M701-L197F73Z  
datasheet  
Inverter Switching Characteristics  
figure 18.  
FWD  
figure 19.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Qr = f(IC)  
Qr = f(Rgon)  
12  
10  
8
12  
10  
8
Qr  
Qr  
Qr  
Qr  
6
6
Qr  
Qr  
4
4
2
2
0
0
0,0  
0
25  
50  
75  
100  
125  
150  
2,5  
5,0  
7,5  
10,0  
12,5  
15,0  
17,5  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
±15  
4
V
V
Ω
125 °C  
150 °C  
600  
±15  
75  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
figure 20.  
FWD  
figure 21.  
FWD  
Typical peak reverse recovery current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
IRM = f(IC)  
IRM = f(Rgon)  
40  
35  
30  
25  
20  
15  
10  
5
45  
40  
35  
30  
25  
20  
15  
10  
5
IRM  
IRM  
IRM  
IRM  
IRM  
IRM  
0
0
0,0  
0
25  
50  
75  
100  
125  
150  
2,5  
5,0  
7,5  
10,0  
12,5  
15,0  
17,5  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
±15  
4
V
V
Ω
125 °C  
150 °C  
600  
±15  
75  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
Copyright Vincotech  
12  
26 Oct. 2022 / Revision 1  
10-E2126PA075M701-L197F73Z  
datasheet  
Inverter Switching Characteristics  
figure 22.  
FWD  
figure 23.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor  
diF/dt, dirr/dt = f(IC)  
diF/dt, dirr/dt = f(Rgon)  
1200  
1000  
800  
600  
400  
200  
0
diF/dt ‒ ‒ ‒ ‒ ‒  
diF/dt ‒ ‒ ‒ ‒ ‒  
dirr/dt ──────  
dirr/dt ──────  
1000  
800  
600  
400  
200  
0
0
25  
50  
75  
100  
125  
150  
IC(A)  
0,0  
2,5  
5,0  
7,5  
10,0  
12,5  
15,0  
17,5  
R
gon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
±15  
4
V
V
Ω
125 °C  
150 °C  
600  
±15  
75  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
figure 24.  
IGBT  
Reverse bias safe operating area  
IC = f(VCE  
)
175  
IC MAX  
150  
125  
100  
75  
50  
25  
0
0
250  
500  
750  
1000  
1250  
1500  
V
CE(V)  
Tj =  
At  
150  
°C  
Ω
Rgon  
Rgoff  
=
=
4
4
Ω
Copyright Vincotech  
13  
26 Oct. 2022 / Revision 1  
10-E2126PA075M701-L197F73Z  
datasheet  
Inverter Switching Definitions  
figure 25.  
IGBT  
figure 26.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
IC  
IC  
VGE  
VGE  
VCE  
tEoff  
VCE  
tEon  
figure 27.  
IGBT  
figure 28.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
IC  
IC  
VCE  
tr  
VCE  
tf  
Copyright Vincotech  
14  
26 Oct. 2022 / Revision 1  
10-E2126PA075M701-L197F73Z  
datasheet  
Inverter Switching Definitions  
figure 29.  
FWD  
figure 30.  
FWD  
Turn-off Switching Waveforms & definition of trr  
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)  
Qr  
IF  
IF  
fitted  
VF  
Copyright Vincotech  
15  
26 Oct. 2022 / Revision 1  
10-E2126PA075M701-L197F73Z  
datasheet  
Ordering Code  
Version  
Ordering Code  
Without thermal paste  
10-E2126PA075M701-L197F73Z  
10-E2126PA075M701-L197F73Z-/7/  
10-E2126PA075M701-L197F73Z-/3/  
With thermal paste (5,2 W/mK, PTM6000HV)  
With thermal paste (3,4 W/mK, PSX-P7)  
Marking  
Name  
Date code  
UL & VIN  
Lot  
Serial  
Text  
NN-NNNNNNNNNNNNNN-  
TTTTTTVV  
WWYY  
UL VIN  
LLLLL  
SSSS  
Type&Ver  
Lot number  
Serial  
Date code  
Datamatrix  
TTTTTTTVV  
LLLLL  
SSSS  
WWYY  
Outline  
Pin table [mm]  
Pin  
1
X
Y
3,2  
0
Function  
G16  
32  
32  
2
Ph3  
3
28,8  
25,6  
19,2  
16  
0
Ph3  
4
0
Ph3  
5
0
Ph2  
6
0
Ph2  
7
12,8  
12,8  
6,4  
3,2  
0
0
Ph2  
8
3,2  
0
G14  
9
Ph1  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
0
Ph1  
0
Ph1  
0
3,2  
19,2  
28,8  
44,8  
48  
G12  
0
Therm1  
Therm2  
G11  
0
0
0
DC-1  
DC-1  
DC-1  
DC-1  
DC-2  
G13  
3,2  
6,4  
9,6  
12,8  
12,8  
16  
48  
48  
48  
48  
44,8  
48  
DC-2  
DC-2  
DC-2  
G15  
19,2  
22,4  
22,4  
25,6  
28,8  
32  
48  
48  
44,8  
48  
DC-3  
DC-3  
DC-3  
DC-3  
DC+  
DC+  
DC+  
DC+  
48  
48  
32  
44,8  
25,6  
22,4  
19,2  
16  
12,8  
12,8  
12,8  
12,8  
Copyright Vincotech  
16  
26 Oct. 2022 / Revision 1  
10-E2126PA075M701-L197F73Z  
datasheet  
Pinout  
30,31,32,33  
DC+123  
T12  
T14  
G14  
T16  
G16  
D11  
D13  
D15  
G12  
12  
8
1
Ph1  
9,10,11  
Ph2  
5,6,7  
Ph3  
2,3,4  
T11  
G11  
T13  
T15  
D12  
D14  
D16  
G13  
G15  
25  
15  
21  
Rt  
DC-1  
DC-2  
DC-3  
Therm1  
Therm2  
16,17,18,19  
20,22,23,24  
26,27,28,29  
13  
14  
Identification  
Component  
Voltage  
Current  
Function  
Comment  
ID  
T11, T12, T13, T14,  
IGBT  
1200 V  
75 A  
50 A  
Inverter Switch  
T15, T16  
D11, D12, D13, D14,  
D15, D16  
FWD  
1200 V  
Inverter Diode  
Thermistor  
Rt  
Thermistor  
Copyright Vincotech  
17  
26 Oct. 2022 / Revision 1  
10-E2126PA075M701-L197F73Z  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 100  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for flow E2 packages see vincotech.com website.  
Package data  
Package data for flow E2 packages see vincotech.com website.  
Vincotech thermistor reference  
See Vincotech thermistor reference table at vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
10-E2126PA075M701-L197F73Z-D1-14  
26 Oct. 2022  
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
18  
26 Oct. 2022 / Revision 1  

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